Renesas Electronics, a global supplier of semiconductor solutions, announced the launch of a new generation of Si-IGBT (Silicon-Based Insulated Gate Bipolar Transistor) devices that deliver lower power losses in a smaller size. For next-generation electric vehicle (EVs) inverter applications, mass production of AE5-generation IGBT products will begin in the first half of 2023 on 200mm and 300mm wafer lines at Renesas' Naka factory in Japan. In addition, Renesas will ramp up production at its new 300mm wafer fab for power semiconductor devices in Kofu, Japan, starting in the first half of 2024, to meet growing market demand for power semiconductor products.
The silicon-based AE5 process for IGBTs reduces power losses by 10% compared to current generation AE4 products, an energy-saving technology that will help EV developers conserve battery power and increase driving range. The new product is about 10% smaller in volume while maintaining high robustness. This new Renesas device achieves an industry-leading level of performance in IGBTs by striking the best balance between low power loss and high robustness. This IGBT minimizes parameter variation between IGBTs and brings stability when the IGBTs are operated in parallel, thereby significantly improving the performance and safety of the module. These features provide engineers with greater flexibility to design small inverters that achieve high performance.
Katsuya Konishi, Vice President of the Power System Business Unit at Renesas Electronics, also said: "With the popularity of electric vehicles, the market demand for automotive power semiconductors has risen rapidly. Based on our rich experience in the manufacture of automotive-grade power products in the past seven years, Renesas' IGBTs provide a highly reliable and robust power supply solution. With the latest devices coming into mass production, Renesas will create ideal features and price-performance ratios for the mid-range EV inverter market expected to grow rapidly in the future."
