NXP Semiconductors uses its latest proprietary gallium nitride (GaN) technology to offer a new range of RF power separation solutions for 32T32R active antenna systems. NXP now offers the broadest RF GaN product portfolio for massive Multiple Input multiple Output (Mass MIMO) 5G radios. This new family complements NXP's existing portfolio of 64T64R radio-discrete GaN power amplifier solutions, covering all cellular bands from 2.3 to 4.0 GHz.
Why it's important: As 5G networks continue to expand around the world, mobile network operators are adding 32T32R radios to extend their massive MIMO coverage beyond ultra-dense urban areas to less-dense cities and suburbs. By combining 32 antennas instead of 64, coverage can be maintained more cost-effectively while preserving the high-end 5G experience that large-scale MIMO brings.
With twice the power of the 64T64R solution, its new family of solutions offer a smaller and lighter overall 5G connectivity solution. This pin compatibility enables network operators to quickly scale frequency and power levels.
Jim Norling, vice president and general manager of NXP Radio Power High Power Solutions said："As 5G deployments continue to expand globally, network operators need to expand their coverage while maintaining performance," "By delivering twice as much power in the same package size, NXP enables RF engineers to create smaller, lighter, and easier to deploy and hide in cities and suburbs."
The new series GaN discrete solutions have an average antenna power of 10W and a drain efficiency of up to 58% for 320W radio units. It contains drivers and final stage transistors and utilizes the company's highly linearized RF GaN technology.
