Promote GaN to enter the high power market | Heisener Electronics
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Promote GaN to enter the high power market

Technology Cover
Post-datum: 2022-05-04, Nakagawa Manufacturing

     Gallium nitride is a next-generation semiconductor technology whose GaNFast power integrated circuit combines GaN power supply and drive plus sensing, protection and control to create simple, small, fast and efficient power conversion performance. It can run 20 times faster than conventional silicon, triple the power, save 40 percent of energy, and triple the charging speed at half the size and weight.

     Proving the quality and reliability of GaNFast IC, Samsung, Xiaomi, Dell, Lenovo and LG have recently announced 40 million batches of GaNFast IC in multiple markets and applications, reported zero GAN-related field failures, and an industry-benchmark 20-year limited warranty, Application-specific GaN ics created for data centers, solar and electric vehicles were sampled in late 2021, and PCIM offers customers the perfect opportunity to update efficiency, power density, quality and reliability for these new, higher power markets.

       Gene Sheridan, CEO and co-founder of Navitas, said: "Europe is a key market for Navitas, reflected in our growing team presence, our industry-leading focus on sustainability and a wide range of applications targeting 1kW to 20kW. On the development of GaN ic series.” “Recently, with the announcement of customers such as bruusa (electric vehicle), Enphase (solar energy), Compuware (data center), and the upcoming EU 'Titanium +' Directive 2009/125/EC, As well as application-specific design centers, we can demonstrate that Navitas is making rapid progress in these strategic high-power markets."

       Navitas Semiconductor is highlighting next-generation IC technologies and market advancement at PCIM 2022.It will be held on May 10-12, 2022,PCIM Europe, Nuremberg Expo, Booth 523, Hall 9