The Vishay Siliconix N-channel SiHK045N60E delivers high efficiency for telecommunications, server, and data center power applications. The SiHK045N60E reduces on-resistance by 27% compared to the previous generation 600V E-series MOSFEts while providing 60% lower gate charging. This provides the lowest gate charge time and on resistance in the industry for similar devices and is the key FOM for 600V MOSFeTs for power conversion applications. Published by Vishay Intertechnology, the latest device in its fourth generation 600V E series power MOSFET.
With new and upcoming devices in the fourth generation family, the company is meeting the need for efficiency and power density advances in the first phase of power system architecture -- power factor correction and hard-switched AC/DC converter topologies. The company offers a wide range of MOSFET technologies that support all phases of the power conversion process, from high voltage input to low voltage output required by the latest electronic systems.
To improve switching performance, the device provides a low effective output capacitor Co(er) of 117pF. These values translate into reduced conduction and switching losses to save energy. The device has a thermal resistance RthJC of 0.45C/W, 11.8% lower than recent competing devices, providing higher thermal performance.
The device is based on its latest energy saving E-series superjunction technology, providing a low typical on resistance of 0.043 ohm at 10V and an ultra-low gate charge as low as 65nC. The device has an FOM of 2.8 ohm *nC, 3.4% lower than the closest MOSFET in its class.
The device, PowerPAK 10 x 12, released today, is ROHS compliant, halogen-free, and can withstand overvoltage transients in avalanche mode with 100% UIS test guaranteed limit.
