ON Semiconductor has expanded its SiC diode product family with the introduction of the latest 650V SiC Schottky diode series. Diodes' cutting-edge silicon carbide technology provides higher switching capabilities, lower power losses, and easy device paralleling.
The 650V SiC diode series includes 6A to 50A surface mount and through-hole packages. All diodes provide zero reverse recovery, low forward voltage, temperature independent current stability, high surge capability and positive temperature coefficient.
The target customers of the new diodes are engineers who develop PFC and boost converters for various applications such as solar photovoltaic inverters, telecommunications power supplies and data center power supplies, while facing the challenge of providing a smaller footprint with higher efficiency .
Simon Keeton, senior vice president and general manager of ON Semiconductor's MOSFET business unit, said: "This new 650 V SiC diode series complements the company's existing 1200 V SiC device and brings more product range to our customers." Taking advantage of the unique characteristics of wide band gap materials, SiC technology has a clear advantage over silicon. Its rugged structure provides a reliable solution for applications in challenging environments. These new devices will benefit our customers by simplifying and improving performance. Well, a design that takes up less space. "
