Nexperia announced the introduction of 650 V Silicon Carbide (SiC) Schottky diodes for power applications requiring ultra-high performance, low loss and high power efficiency. The 10 A, 650 V SiC Schottky diodes meet industrial grade device standards and address the challenges posed by high voltage and high current applications, including switching mode power supplies, AC-DC and DC-DC converters, battery charging infrastructure, uninterruptible power supplies and photovoltaic inverters, and improve continuous operation performance. For example, a data center equipped with a Nexperia PSC1065K SiC Schottky diode design power supply will be more compliant with stringent energy efficiency standards than a data center that uses only silicon based solutions.
Katrin Feurle, Senior Director, Nexperia SiC Product Group, said, "We are proud of the high performance SiC Schottky diodes we offer in today's available solutions. "As people become more energy conscious, we are focused on bringing more choice and convenience to the market to meet the significantly increased demand for high-volume, high-efficiency applications." This SiC Schottky diode comes in a true 2-pin (R2P) TO-220-2 through-hole power plastic package. Other package options include surface mount (DPAK R2P and D2PAK R2P) and through-hole (TO-247-2) packages in true 2-pin configurations for enhanced reliability in high-pressure applications up TO 175°C.
The PSC1065K offers advanced performance and excellent quality factor (QC x VF) with a temperature-independent capacitor switch and zero recovery performance. Its outstanding switching performance is almost unaffected by changes in current and switching speed. The PSC1065K's combined PIN Schottky (MPS) structure also has other advantages, such as excellent surge current tolerance, which eliminates the need for additional protection circuits. These features significantly reduce system complexity and enable hardware designers to achieve greater efficiency with smaller dimensions in durable, high-power applications.
