GeneSiC Semiconductor's high-temperature SiC transistors and rectifiers, compact high-temperature SiC junction transistors (SJT) and rectifiers are packaged in TO-46. Discrete components are designed to operate at temperatures above 225 ° C. High voltage, low RDS (ON) SiC transistors and rectifiers are designed to reduce the size and weight of electronic applications that need to handle higher power at high temperatures.
