ADI has introduced an absorptive single-pole double-throw (SPDT) switch designed for the 9kHz to 13GHz frequency band, which has a high isolation of 48dB and a low insertion loss of 0.6dB when operating at 8GHz.
HMC1118LP3DE is the first product in Analog Devices' new RF and microwave control product portfolio. It demonstrates the inherent advantages of silicon process technology. Compared with traditional GaAs RF switches, silicon technology has key advantages. These advantages include a settling time one hundred times faster than GaAs, powerful ESD (electrostatic discharge) protection (2000V and 250V compared to GaAs), and the ability to extend the low-frequency side of the switch to 1,000 times lower than GaAs. GaAs while maintaining high linearity.
The HMC1118LP3DE also provides industry-leading RF power processing capability with a direct power of 4W and a hot-switching operating mode of 0.5W. Thermal switch power handling performance is more than twice better than competing products with similar RF bandwidth, which allows engineers to increase the allowable RF power in their applications and systems without damaging components. The HMC1118LP3DE is optimized to achieve high isolation and extremely flat transmission characteristics over a wide operating frequency range up to 13 GHz, while maintaining high signal fidelity down to 9 kHz. The company said that the combination of these functions is very suitable for demanding test and measurement, automated test equipment, defense electronics and switches for wireless communication applications. It is a low-cost alternative to traditional GaAs switches.
