Infineon Technologies AG introduces new EDT2 IGBT in TO247PLUS package. These devices are optimized for automotive discrete traction inverters and extend its portfolio of discrete high voltage devices for automotive applications. Due to its high quality, IGBT meets and exceeds the industry standard for automotive components, AECQ101. Therefore, these devices can significantly improve the performance and reliability of the inverter system. Designed with an automotive micropatterned grooved field termination unit, these devices are based on technologies that have been successfully used in numerous inverter modules such as EasyPACK 2B EDT2 or HybridPACK.
EDT2 technology is optimized for traction inverters with a breakdown voltage of 750V and supports up to 470VDC battery voltages with significantly reduced switching and on-on losses. The product family has robust short-circuit characteristics according to the needs of the target application. In addition, the TO247PLUS package provides greater creepage distance for ease of design.
Rated current 120A and 200A, the discrete EDT2 IGBT has very low forward voltage at 100C and can reduce on-loss by up to 13% compared to the previous generation. Rated at 200A, AIKQ200N75CP2 is also the best discrete IGBT in its class in TO247Plus packages. Therefore, for a certain target power class, fewer devices need to be parallel. In addition, the power density increases and the system cost decreases.
EDT2 IGBT provides a very narrow parameter distribution. The difference between typical collector emitter saturation voltage (V Ce (SAT)) and maximum value is less than 200mV, and the difference between gate threshold voltage (V GEth) is less than 750mV. In addition, the thermal coefficient is positive. This makes parallel operation easy and provides system flexibility and power scalability for the final design. In addition, IGBT has smooth switching performance, low gate charge (Q G) and high junction temperature (T VJOP) of 175C.
