Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix |
MOSFET N-CH 250V 8.1A TO-220AB
|
package: TO-220-3 |
Voorraad433.476 |
|
MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 770pF @ 25V | ±20V | - | 74W (Tc) | 450 mOhm @ 5.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC
|
package: TO-247-3 |
Voorraad6.960 |
|
MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 2600pF @ 25V | ±20V | - | 190W (Tc) | 300 mOhm @ 9.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 19A TO-220AB
|
package: TO-220-3 |
Voorraad6.224 |
|
MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | ±20V | - | 150W (Tc) | 200 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB
|
package: TO-220-3 |
Voorraad392.520 |
|
MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±20V | - | 60W (Tc) | 270 mOhm @ 5.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 50V 15A TO-220AB
|
package: TO-220-3 |
Voorraad16.428 |
|
MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 850pF @ 25V | ±20V | - | 40W (Tc) | 100 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 200V 0.4A 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad65.976 |
|
MOSFET (Metal Oxide) | 200V | 400mA (Ta) | 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | ±20V | - | 1W (Ta) | 3 Ohm @ 240mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET P-CH 200V 3.5A TO-220AB
|
package: TO-220-3 |
Voorraad507.936 |
|
MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 4V @ 250µA | 22nC @ 10V | 350pF @ 25V | ±20V | - | 40W (Tc) | 1.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 12A TO-220AB
|
package: TO-220-3 |
Voorraad143.304 |
|
MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | ±20V | - | 88W (Tc) | 300 mOhm @ 7.2A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 800MA 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad1.214.796 |
|
MOSFET (Metal Oxide) | 200V | 800mA (Ta) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 1W (Ta) | 800 mOhm @ 480mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET P-CH 200V 1.8A TO-220AB
|
package: TO-220-3 |
Voorraad136.392 |
|
MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | ±20V | - | 20W (Tc) | 3 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 6.8A TO-220AB
|
package: TO-220-3 |
Voorraad489.552 |
|
MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 60W (Tc) | 600 mOhm @ 4.1A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 1.3A 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad168.360 |
|
MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±20V | - | 1.3W (Ta) | 270 mOhm @ 780mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET P-CH 200V 11A TO-220AB
|
package: TO-220-3 |
Voorraad5.664 |
|
MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 500 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 2A TO-220AB
|
package: TO-220-3 |
Voorraad19.380 |
|
MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | ±20V | - | 36W (Tc) | 3.6 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-220AB
|
package: TO-220-3 |
Voorraad392.388 |
|
MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 410pF @ 25V | ±20V | - | 50W (Tc) | 1.8 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 4.5A TO-220AB
|
package: TO-220-3 |
Voorraad60.156 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 610pF @ 25V | ±20V | - | 74W (Tc) | 1.5 Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-220AB
|
package: TO-220-3 |
Voorraad286.812 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 360pF @ 25V | ±20V | - | 50W (Tc) | 3 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB
|
package: TO-220-3 |
Voorraad24.960 |
|
MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1400pF @ 25V | ±20V | - | 125W (Tc) | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220AB
|
package: TO-220-3 |
Voorraad18.048 |
|
MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 700pF @ 25V | ±20V | - | 74W (Tc) | 1 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 5.2A TO-220AB
|
package: TO-220-3 |
Voorraad1.138.680 |
|
MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 50W (Tc) | 800 mOhm @ 3.1A, 10V | -65°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 14A TO-220AB
|
package: TO-220-3 |
Voorraad72.108 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | ±20V | - | 88W (Tc) | 160 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 3.3A TO-220AB
|
package: TO-220-3 |
Voorraad997.548 |
|
MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 36W (Tc) | 1.5 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 200V 6.5A TO-220AB
|
package: TO-220-3 |
Voorraad12.360 |
|
MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | ±20V | - | 74W (Tc) | 800 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 1A 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad31.368 |
|
MOSFET (Metal Oxide) | 100V | 1A (Ta) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 1.3W (Ta) | 600 mOhm @ 600mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET P-CH 100V 0.7A 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad5.376 |
|
MOSFET (Metal Oxide) | 100V | 700mA (Ta) | 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | ±20V | - | 1.3W (Ta) | 1.2 Ohm @ 420mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET N-CH 200V 600MA 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad15.576 |
|
MOSFET (Metal Oxide) | 200V | 600mA (Ta) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 1W (Ta) | 1.5 Ohm @ 360mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET P-CH 60V 600MA 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad13.380 |
|
MOSFET (Metal Oxide) | 60V | 600mA (Ta) | - | - | 15nC @ 15V | 250pF @ 25V | - | - | - | 1.6 Ohm @ 300mA, 10V | - | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET N-CH 100V 1A 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad70.800 |
|
MOSFET (Metal Oxide) | 100V | 1A (Ta) | 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | ±20V | - | 1.3W (Ta) | 540 mOhm @ 600mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |