Pagina 109 - Vishay Semiconductor Diodes Division Producten - Diodes - Gelijkrichters - Single | Heisener Electronics
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Vishay Semiconductor Diodes Division Producten - Diodes - Gelijkrichters - Single

Archief 10.373
Pagina  109/371
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MPG06G-E3/100
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 600ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
package: MPG06, Axial
Voorraad5.424
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
600ns
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
MPG06DHE3_A/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 600ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
package: MPG06, Axial
Voorraad2.496
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
600ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
MPG06D-E3/100
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 600ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
package: MPG06, Axial
Voorraad2.880
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
600ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
MPG06BHE3_A/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 600ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
package: MPG06, Axial
Voorraad6.096
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
600ns
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
MPG06B-E3/100
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 600ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
package: MPG06, Axial
Voorraad3.408
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
600ns
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
ES07B-M-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO219

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad2.912
100V
500mA
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
ES07D-M-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA DO219

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad4.400
200V
500mA
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
ES07B-M-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO219

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad4.880
100V
500mA
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
B350A-M3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 50V
  • Capacitance @ Vr, F: 145pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad4.368
50V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 50V
145pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
B350A-M3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 50V
  • Capacitance @ Vr, F: 145pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad7.712
50V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 50V
145pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SE30AFB-M3/6A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.4A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-221AC, SMA Flat Leads
Voorraad7.856
100V
1.4A (DC)
910mV @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 100V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC
-55°C ~ 175°C
SE30AFJ-M3/6B
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.4A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-221AC, SMA Flat Leads
Voorraad4.096
600V
1.4A (DC)
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.5µs
100µA @ 100V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC
-55°C ~ 175°C
SE30AFG-M3/6B
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.4A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-221AC, SMA Flat Leads
Voorraad7.264
400V
1.4A (DC)
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.5µs
10µA @ 400V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC
-55°C ~ 175°C
SE30AFD-M3/6B
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.4A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-221AC, SMA Flat Leads
Voorraad6.352
200V
1.4A (DC)
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.5µs
10µA @ 200V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC
-55°C ~ 175°C
SE30AFB-M3/6B
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.4A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-221AC, SMA Flat Leads
Voorraad3.024
100V
1.4A (DC)
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.5µs
100µA @ 100V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC
-55°C ~ 175°C
SE30AFD-M3/6A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-221AC, SMA Flat Leads
Voorraad2.256
200V
3A (DC)
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 200V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-55°C ~ 175°C
BYG24J-M3/TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad4.688
600V
1.5A
1.25V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 600V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG24G-M3/TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad4.256
400V
1.5A
1.25V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 400V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG24D-M3/TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad7.040
200V
1.5A
1.25V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 200V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG24J-M3/TR3
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad4.448
600V
1.5A
1.25V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 600V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG24G-M3/TR3
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad5.904
400V
1.5A
1.25V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 400V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG24D-M3/TR3
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad2.880
200V
1.5A
1.25V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 200V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
VS-2EFU06HM3/I
Vishay Semiconductor Diodes Division

DIODE UF 600V 2A DO219AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-219AB
Voorraad2.288
600V
2A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
3µA @ 600V
-
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
hot BYM12-50-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AB, MELF (Glass)
Voorraad18.000
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
hot BYM12-400-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 14pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AB, MELF (Glass)
Voorraad6.216
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
14pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BYM12-300-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 14pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AB, MELF (Glass)
Voorraad5.584
300V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
14pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BYM12-150-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AB, MELF (Glass)
Voorraad7.424
150V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BYM12-100-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AB, MELF (Glass)
Voorraad4.864
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C