Toshiba Semiconductor and Storage Producten

TK28N65W,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: TO-247-3

RN4910(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: 6-TSSOP, SC-88, SOT-363

CCS15F40,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A CST2C

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 640mV @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 40V
• Capacitance @ Vr, F: 130pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: CST2C
• Operating Temperature - Junction: 150°C (Max)

package: 2-SMD, No Lead

1SS272TE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC61B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-61AA
• Supplier Device Package: SC-61B

package: SC-61AA

TA76L431S(T6SOY,QM

Toshiba Semiconductor and Storage

IC REG LINEAR 0.5MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 0.5mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

package: TO-226-3, TO-92-3 Long Body

TA58L12S(FJTN,AQ)

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: LSTM

package: TO-220-3 Full Pack

TA58L05S(FJTN,QM)

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: 3-HSIP

package: TO-220-3 Full Pack

TCK22922G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.1 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 25 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: Reverse Current
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UFBGA, WLCSP
• Supplier Device Package: 6-WCSPE (0.80x1.2)

package: 6-UFBGA, WLCSP

TC7USB221FT(EL,M)

Toshiba Semiconductor and Storage

IC USB SWITCH SPDT DUAL 14-TSSOP

• Type: Multiplexer/Demultiplexer
• Circuit: 2 x 1:2
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

package: 14-TSSOP (0.173", 4.40mm Width)

TC7SZ07FU,LJ(CT

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V USV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Open Drain
• Current - Output High, Low: -, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

package: 5-TSSOP, SC-70-5, SOT-353

TC74LCX541FK(EL,K)

Toshiba Semiconductor and Storage

IC BUFF/DVR 8BIT LOW V 20VSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-VFSOP (0.118", 3.00mm Width)
• Supplier Device Package: 20-VSSOP

package: 20-VFSOP (0.118", 3.00mm Width)

TC7SZ34F,LJ(CT

Toshiba Semiconductor and Storage

IC BUFFER UHS SGL SMV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

TL2FL-NW0,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

• Color: White, Cool
• CCT (K): 5000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 26 lm (23 lm ~ 29 lm)
• Current - Test: 65mA
• Voltage - Forward (Vf) (Typ): 2.82V
• Lumens/Watt @ Current - Test: 136 lm/W
• CRI (Color Rendering Index): 70
• Current - Max: 100mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3014 Metric)
• Supplier Device Package: 3014
• Size / Dimension: 0.118" L x 0.055" W (3.00mm x 1.40mm)
• Height - Seated (Max): 0.030" (0.77mm)

package: 1206 (3014 Metric)

LTA085C184F

Toshiba Semiconductor and Storage

LCD 8.5INCH 800X480 WVGA TOUCH

• Display Type: TFT - Color
• Display Mode: Transmissive
• Touchscreen: Resistive
• Diagonal Screen Size: 8.5" (215.90mm)
• Viewing Area: 184.80mm W x 110.88mm H
• Backlight: CCFL
• Dot Pixels: 800 x 480 (WVGA)
• Interface: Parallel, 18-Bit (RGB)
• Graphics Color: Red, Green, Blue (RGB)
• Background Color: -

package: -

TC35678FSG-002

Toshiba Semiconductor and Storage

V4.2 BLUETOOTH SMART IC IMPLEMEN

• Type: TxRx + MCU
• RF Family/Standard: Bluetooth
• Protocol: Bluetooth v4.2
• Modulation: GFSK
• Frequency: 2.4GHz
• Data Rate (Max): -
• Power - Output: 0dBm
• Sensitivity: -93dBm
• Memory Size: 256kB Flash, 384kB ROM, 192kB RAM
• Serial Interfaces: I2C, SPI
• GPIO: 17
• Voltage - Supply: 2 V ~ 3.6 V
• Current - Receiving: 3.3mA
• Current - Transmitting: 3.3mA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFQFN Exposed Pad

package: 60-VFQFN Exposed Pad

TLP748J(TP1,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 4KV SCR 6SMD

• Output Type: SCR
• Zero Crossing Circuit: No
• Number of Channels: 1
• Voltage - Isolation: 4000Vrms
• Voltage - Off State: 600V
• Static dV/dt (Min): 5V/µs
• Current - LED Trigger (Ift) (Max): 10mA
• Current - On State (It (RMS)) (Max): 150mA
• Current - Hold (Ih): 1mA
• Turn On Time: 15µs
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Gull Wing
• Supplier Device Package: 6-SMD
• Approvals: BSI, SEMKO, UR

package: 6-SMD, Gull Wing

TLP290(BL-TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 200% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

package: 4-SOIC (0.179", 4.55mm)

TLP2366(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL SO6-5

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 10mA
• Data Rate: 20MBd
• Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
• Rise / Fall Time (Typ): 15ns, 15ns
• Voltage - Forward (Vf) (Typ): 1.61V
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
• Supplier Device Package: 6-SO, 5 Lead

package: 6-SOIC (0.179", 4.55mm Width) 5 Leads

TMPM368FDFG

Toshiba Semiconductor and Storage

TX FAMILY MCU

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CANbus, EBI/EMI, I²C, IrDA, Microwire, SIO, SPI, SSI, SSP, UART/USART, USB
• Peripherals: DMA, LVD, POR, WDT
• Number of I/O: 59
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x12b, D/A 2x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

package: 100-LQFP

7UL1T02FU,LF

Toshiba Semiconductor and Storage

L-MOS LVP SERIES GATE NOR VCC:2.

• Logic Type: NOR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2.3V ~ 3.6V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.1V ~ 0.4V
• Logic Level - High: 2.2V ~ 2.48V
• Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

package: 5-TSSOP, SC-70-5, SOT-353

TCR15AG12,LF

Toshiba Semiconductor and Storage

1500MA LDO VOUT1.2V DROPOUT120MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

RN1114-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 1 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: -

TK5P60W5-RVQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 230µA
• Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

TK125V65Z-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 24A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.02mA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 4-DFN-EP (8x8)
• Package / Case: 4-VSFN Exposed Pad

package: -

TCK423G-L3F

Toshiba Semiconductor and Storage

LOAD SWITCH (GATE DRIVER) IC WCS

• Driven Configuration: High-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 2.7V ~ 28V
• Logic Voltage - VIL, VIH: 0.4V, 1.2V
• Current - Peak Output (Source, Sink): -
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFBGA, WLCSP
• Supplier Device Package: 6-WCSPG (0.8x1.2)

package: -

TRS8V65H-LQ

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 8A DFN8X8

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 90 µA @ 650 V
• Capacitance @ Vr, F: 520pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 4-VSFN Exposed Pad
• Supplier Device Package: 4-DFN-EP (8x8)
• Operating Temperature - Junction: 175°C

package: -

TPC8227-H-LQ

Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 5.1A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5.1A
• Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
• Power - Max: 1.5W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

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TW070J120B-S1Q

Toshiba Semiconductor and Storage

SICFET N-CH 1200V 36A TO3P

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 5.8V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
• Vgs (Max): ±25V, -10V
• FET Feature: -
• Power Dissipation (Max): 272W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)
• Package / Case: TO-3P-3, SC-65-3

package: -