Toshiba Semiconductor and Storage Producten

TPC6104(TE85L,F,M)

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4.5A VS6 2-3T1A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: VS-6 (2.9x2.8)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

package: SOT-23-6 Thin, TSOT-23-6

TK6A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 5.8A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 180µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

package: TO-220-3 Full Pack, Isolated Tab

SSM3K36MFV,L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA VESM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: VESM
• Package / Case: SOT-723

package: SOT-723

2SD2406-Y(F)

Toshiba Semiconductor and Storage

TRANS NPN 80V 4A TO220NIS

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
• Current - Collector Cutoff (Max): 30µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
• Power - Max: 25W
• Frequency - Transition: 8MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

package: TO-220-3 Full Pack

RN2422TE85LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 200MW SMINI

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 2.2k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: TO-236-3, SC-59, SOT-23-3

RN4901,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: 6-TSSOP, SC-88, SOT-363

TA76431S,T6MURAF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

package: TO-226-3, TO-92-3 Long Body

TB67S101AFTG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 47 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-WFQFN Exposed Pad
• Supplier Device Package: 48-WQFN (7x7)

package: 48-WFQFN Exposed Pad

TC7WB66CFK,LF

Toshiba Semiconductor and Storage

IC DUAL BUS SWITCH US8

• Type: Bus Switch
• Circuit: 2 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: US8

package: 8-VFSOP (0.091", 2.30mm Width)

TC4SU69FT5LFT

Toshiba Semiconductor and Storage

IC GATE INVERTER SGL SSOP5

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 3 V ~ 18 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1 V ~ 3 V
• Logic Level - High: 4 V ~ 12 V
• Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

package: SC-74A, SOT-753

TC74LCX245FTELM

Toshiba Semiconductor and Storage

IC BUS TRANSCEIVER 8BIT 20TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

package: 20-TSSOP (0.173", 4.40mm Width)

TC75S51F,LF

Toshiba Semiconductor and Storage

IC OPAMP GP 5SSOP

• Amplifier Type: General Purpose
• Number of Circuits: 1
• Output Type: -
• Slew Rate: 0.5 V/µs
• Gain Bandwidth Product: -
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 2mV
• Current - Supply: 60µA
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): 1.5 V ~ 7 V, ±0.75 V ~ 3.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

74HCT4051D(BJ)

Toshiba Semiconductor and Storage

IC MUX/DEMUX 8X1 16SOIC

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 120 Ohm
• Channel-to-Channel Matching (ΔRon): 6 Ohm
• Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
• Voltage - Supply, Dual (V±): ±1 V ~ 5 V
• Switch Time (Ton, Toff) (Max): 39ns, 32ns
• -3db Bandwidth: 180MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 400nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

package: 16-SOIC (0.154", 3.90mm Width)

TL1L2-NW0,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

• Color: White, Cool
• CCT (K): 5000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm)
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.85V
• Lumens/Watt @ Current - Test: 133 lm/W
• CRI (Color Rendering Index): 70
• Current - Max: 1A
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.080" (2.03mm)

package: 1414 (3535 Metric)

TLP3106(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 4A 30V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 40 mOhm
• Load Current: 4A
• Voltage - Input: 1.33VDC
• Voltage - Load: 0 ~ 30 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SOP (0.173", 4.40mm)
• Supplier Device Package: 6-SOP (2.54mm)
• Relay Type: Relay

package: 6-SOP (0.173", 4.40mm)

TLP290-4(GB-TP,E)

Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV 4CH TRANS 16-SO

• Number of Channels: 4
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 400% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.2V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

package: 16-SOIC (0.179", 4.55mm Width)

TLP292-4(V4GBTPE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

• Number of Channels: 4
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

package: 16-SOIC (0.179", 4.55mm Width)

TLP2468(F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPN COLLECTOR 8SO

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 15kV/µs
• Input Type: DC
• Output Type: Open Collector
• Current - Output / Channel: 25mA
• Data Rate: 20MBd
• Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.57V
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

TB6585FG,8,EL

Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC, SENSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

TPH6R30ANL-L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 66A/45A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

package: -

TJ60S06M3L-LXHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 60A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

TC78B011FTG-EL

Toshiba Semiconductor and Storage

3-PHASE BRUSHLESS MOTOR CONTROLL

• Motor Type - Stepper: Multiphase
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: I2C
• Technology: NMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 240mA
• Voltage - Supply: 5.5V ~ 27V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 36-WFQFN Exposed Pad
• Supplier Device Package: 36-WQFN (5x5)

package: -

TJ200F04M3L-LXHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 200A TO220SM

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: TO-220SM(W)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -

Request a Quote

TCR2DG21-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.15V @ 100mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 70 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UFBGA, WLCSP
• Supplier Device Package: 4-WCSP (0.79x0.79)

package: -

Request a Quote

TCR8BM085A-L3F

Toshiba Semiconductor and Storage

800MA LDO, VOUT=0.85V, DROPOUT=1

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.215V @ 800mA
• Current - Output: 800mA
• Current - Quiescent (Iq): 36 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

package: -

TRS8E65F-S1Q

Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 8A TO220-2L

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 40 µA @ 650 V
• Capacitance @ Vr, F: 28pF @ 650V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2L
• Operating Temperature - Junction: 175°C (Max)

package: -

RN1711-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR10KOHM Q1BERINF.K

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

package: -

TCR8BM30A-L3F

Toshiba Semiconductor and Storage

800MA LDO, VOUT=3.0V, DROPOUT=17

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.285V @ 800mA
• Current - Output: 800mA
• Current - Quiescent (Iq): 36 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

package: -