Toshiba Semiconductor and Storage Producten

TK12Q60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 11.5A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 600µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Stub Leads, IPak

package: TO-251-3 Stub Leads, IPak

TJ10S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 10A DPAK-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 27W (Tc)
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

TPC8407,LQ(S

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 9A/7.4A 8SOP

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
• Power - Max: 450mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: 8-SOIC (0.154", 3.90mm Width)

2SD2695(T6CANO,A,F

Toshiba Semiconductor and Storage

TRANS NPN 2A 60V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

package: TO-226-3, TO-92-3 Long Body

RN1911(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W US6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: 6-TSSOP, SC-88, SOT-363

1SS250(TE85L,F)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA SC59

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59
• Operating Temperature - Junction: 125°C (Max)

package: TO-236-3, SC-59, SOT-23-3

CUS10S40,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A USC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 400mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 40V
• Capacitance @ Vr, F: 120pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: USC
• Operating Temperature - Junction: 125°C (Max)

package: SC-76, SOD-323

TCK321G,LF

Toshiba Semiconductor and Storage

IC MUX LOAD SW 36V DUAL 16WCSP

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 2:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.3 V ~ 36 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 98 mOhm
• Input Type: -
• Features: Slew Rate Controlled, Status Flag
• Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: -

package: -

TCK304G,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH 9WCSP

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.3 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 73 mOhm
• Input Type: -
• Features: Slew Rate Controlled, Status Flag
• Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: -

package: -

TB62771FTG,8,EL

Toshiba Semiconductor and Storage

IC LED DRIVER RGLTR DIM 20WQFN

• Type: DC DC Regulator
• Topology: Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 4
• Voltage - Supply (Min): 4.75V
• Voltage - Supply (Max): 40V
• Voltage - Output: 45V
• Current - Output / Channel: 150mA
• Frequency: 200kHz ~ 2MHz
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-WFQFN Exposed Pad
• Supplier Device Package: 20-WQFN (4x4)

package: 20-WFQFN Exposed Pad

TC7WPB9306FK,LF

Toshiba Semiconductor and Storage

IC BUS SWITCH SPST DUAL US8

• Type: Bus Switch
• Circuit: 2 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Dual Supply
• Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: US8

package: 8-VFSOP (0.091", 2.30mm Width)

TC7SET02F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP SMV

• Logic Type: NOR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

package: SC-74A, SOT-753

TC7S32FU,LF

Toshiba Semiconductor and Storage

IC GATE OR 1CH 2-INP USV

• Logic Type: OR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 2.6mA, 2.6mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

package: 5-TSSOP, SC-70-5, SOT-353

TC74VHC367FTEL

Toshiba Semiconductor and Storage

IC BUS BUFFER TRI-ST HEX 16TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 2, 4 (Hex)
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

package: 16-TSSOP (0.173", 4.40mm Width)

TC74VCX245FK(EL)

Toshiba Semiconductor and Storage

IC BUS TRANSCVR 8BIT 20VSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-VFSOP (0.118", 3.00mm Width)
• Supplier Device Package: 20-VSSOP

package: 20-VFSOP (0.118", 3.00mm Width)

TD62083APG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 8-CH 18-DIP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 8/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 5V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 18-DIP (0.300", 7.62mm)
• Supplier Device Package: 18-DIP

package: 18-DIP (0.300", 7.62mm)

TLP3544(TP1,F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 6-SMD

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 60 mOhm
• Load Current: 3.5A
• Voltage - Input: 1.33VDC
• Voltage - Load: 0 ~ 40 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SMD (0.300", 7.62mm)
• Supplier Device Package: 6-SMD
• Relay Type: Relay

package: 6-SMD (0.300", 7.62mm)

TLP292-4(V4,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

• Number of Channels: 4
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

package: 16-SOIC (0.179", 4.55mm Width)

TLP2095(F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL 6MFSOP-5

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 15kV/µs
• Input Type: AC, DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 25mA
• Data Rate: 5Mbps
• Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.57V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 3 V ~ 20 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
• Supplier Device Package: 6-MFSOP, 5 Lead

package: 6-SOIC (0.173", 4.40mm Width) 5 Leads

TLP2630(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH OPEN COLL 8DIP

• Number of Channels: 2
• Inputs - Side 1/Side 2: 2/0
• Voltage - Isolation: 2500Vrms
• Common Mode Transient Immunity (Min): 200V/µs, 500V/µs (Typ)
• Input Type: DC
• Output Type: Open Collector, Schottky Clamped
• Current - Output / Channel: 16mA
• Data Rate: 10MBd
• Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

package: 8-DIP (0.300", 7.62mm)

TB67S128FTG(O,EL)

Toshiba Semiconductor and Storage

STEPPING MOTOR DRIVER 50V 5.0A 1

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1/8, 1/16, 1/32
• Applications: General Purpose
• Current - Output: 5A
• Voltage - Supply: 0 V ~ 5.5 V
• Voltage - Load: 6.5 V ~ 44 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-VFQFN Exposed Pad
• Supplier Device Package: 64-VQFN (9x9)

package: 64-VFQFN Exposed Pad

TB62208FG,C,8,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC 40V/1.8A

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: DMOS
• Step Resolution: 1, 1/2
• Applications: General Purpose
• Current - Output: 1.8A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
• Supplier Device Package: 28-HSOP

package: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs

74VHCV541FT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 5.5V 20TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 16mA, 16mA
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

package: 20-TSSOP (0.173", 4.40mm Width)

TC7MBL3253CFK(EL)

Toshiba Semiconductor and Storage

X34 GEN-PURPOSE BUS SWITCH LOW V

• Type: Multiplexer/Demultiplexer
• Circuit: 2 x 4:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.65V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-VFSOP (0.118", 3.00mm Width)
• Supplier Device Package: 16-VSSOP

package: 16-VFSOP (0.118", 3.00mm Width)

TCR3DM18-RF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.38V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

package: -

TB67H481FTG

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVER IC, 2-CHANN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: PWM
• Technology: DMOS
• Step Resolution: 1
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 8.2V ~ 44V
• Voltage - Load: 8.2V ~ 44V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-VQFN (5x5)

package: -

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SSM5H16TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 1.9A UFV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UFV
• Package / Case: 6-SMD (5 Leads), Flat Lead

package: -

SSM3K62TU-LXHF

Toshiba Semiconductor and Storage

SMOS LOW RON NCH VDSS:20V ID:0.8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Lead

package: -