Toshiba Semiconductor and Storage Producten

TPCC8003-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 22W (Tc)
• Rds On (Max) @ Id, Vgs: 16.9 mOhm @ 6.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON
• Package / Case: 8-VDFN Exposed Pad

package: 8-VDFN Exposed Pad

TPH11006NL,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 17A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
• Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

SSM6K202FE,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.3A ES6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: ES6 (1.6x1.6)
• Package / Case: SOT-563, SOT-666

package: SOT-563, SOT-666

SSM3K341R,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 6A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23F
• Package / Case: SOT-23-3 Flat Leads

package: SOT-23-3 Flat Leads

2SD2695,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 60V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

package: TO-226-3, TO-92-3 Long Body

2SC2235-Y(T6ND,AF

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

package: TO-226-3, TO-92-3 Long Body

2SA1869-Y(Q,M)

Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 10W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

package: TO-220-3 Full Pack

2SA1587-BL,LF

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A USM

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 100MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

package: SC-70, SOT-323

TB67S101AFNG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48HTSSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 47 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
• Supplier Device Package: 48-HTSSOP

package: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad

TC7USB31FK(TE85L,F

Toshiba Semiconductor and Storage

DUAL SPST USB SWITCH US8

• Type: SPST Switches
• Circuit: 1 x 1:1
• Independent Circuits: 2
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: US8

package: 8-VFSOP (0.091", 2.30mm Width)

74LCX573FT(AE)

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20TSSOP

• Logic Type: D-Type Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 1.65 V ~ 3.6 V
• Independent Circuits: 1
• Delay Time - Propagation: 8ns
• Current - Output High, Low: 24mA, 24mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

package: 20-TSSOP (0.173", 4.40mm Width)

TC7SH08F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INPUT SMV

• Logic Type: AND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5V
• Logic Level - High: 1.5V
• Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

package: SC-74A, SOT-753

DF3A5.6LFV(TPL3,Z)

Toshiba Semiconductor and Storage

TVS DIODE 3.5VWM VESM

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3.5V
• Voltage - Breakdown (Min): 5.3V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 8pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

package: SOT-723

TLP172G(TP,F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 4-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 110mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

package: 4-SOP (0.173", 4.40mm)

TLP183(YH-TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 75% @ 500µA
• Current Transfer Ratio (Max): 150% @ 500µA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

package: 6-SMD (4 Leads), Gull Wing

TLP2409(TP,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 8SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 20% @ 16mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 20V
• Current - Output / Channel: 16mA
• Voltage - Forward (Vf) (Typ): 1.57V
• Current - DC Forward (If) (Max): 25mA
• Vce Saturation (Max): -
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

TLP2366(V4-TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL SO6-5

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 10mA
• Data Rate: 20MBd
• Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
• Rise / Fall Time (Typ): 15ns, 15ns
• Voltage - Forward (Vf) (Typ): 1.61V
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
• Supplier Device Package: 6-SO, 5 Lead

package: 6-SOIC (0.179", 4.55mm Width) 5 Leads

74VHC27FT

Toshiba Semiconductor and Storage

X34 PB-F NOR GATE VCC: 2-5.5V

• Logic Type: NOR Gate
• Number of Circuits: 3
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 2V ~ 5.5V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.1V ~ 36V
• Logic Level - High: 2V ~ 4.5V
• Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOPB
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

package: 14-TSSOP (0.173", 4.40mm Width)

TK099V65Z-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.27mA
• Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (8x8)
• Package / Case: 4-VSFN Exposed Pad

package: -

TRS6A65F-S1Q

Toshiba Semiconductor and Storage

DIODE SIL CARBIDE 650V 6A TO220F

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 30 µA @ 650 V
• Capacitance @ Vr, F: 22pF @ 650V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220F-2L
• Operating Temperature - Junction: 175°C (Max)

package: -

TCR2LN19-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=1.9V I=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

package: -

2SA2154MFVGR-L3F

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A VESM

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 150 mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

package: -

TK110E65Z-S1X

Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 110MOHM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.02mA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

package: -

XPH3R206NC-L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 70A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta), 132W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

package: -

SSM3J340R-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 4A SOT23F

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
• Vgs (Max): +20V, -25V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23F
• Package / Case: SOT-23-3 Flat Leads

package: -

TK042N65Z5-S1F-S

Toshiba Semiconductor and Storage

650V DTMOS6 HSD 42MOHM TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 2.85mA
• Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: -

SSM3K62TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 800MA UFM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Lead

package: -

RN1711JE-TE85L-F

Toshiba Semiconductor and Storage

TRANSISTOR NPN X2 BRT Q1BSR10KOH

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

package: -