Toshiba Semiconductor and Storage Producten

TK10A60W5,S5VX

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 9.7A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

package: TO-220-3 Full Pack, Isolated Tab

2SC3669-Y(T2OMI,FM

Toshiba Semiconductor and Storage

TRANS NPN 2A 80V SC71

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-71
• Supplier Device Package: MSTM

package: SC-71

2SA1972,T6WNLF(J

Toshiba Semiconductor and Storage

TRANS PNP 500MA 400V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 400V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 35MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

package: TO-226-3, TO-92-3 Long Body

2SC5200-O(Q)

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 230V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 150W
• Frequency - Transition: 30MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PL
• Supplier Device Package: TO-3P(L)

package: TO-3PL

2SC5066-O,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 1dB @ 500MHz
• Gain: -
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: SC-75, SOT-416

DSR01S30SL,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SL2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 700nA @ 30V
• Capacitance @ Vr, F: 8.2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: SL2
• Operating Temperature - Junction: 125°C (Max)

package: 0201 (0603 Metric)

CUS521,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA USC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30µA @ 30V
• Capacitance @ Vr, F: 26pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: USC
• Operating Temperature - Junction: 125°C (Max)

package: SC-76, SOD-323

1SS413,L3M

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 50MA FSC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 50mA
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500nA @ 20V
• Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: fSC
• Operating Temperature - Junction: 125°C (Max)

package: 2-SMD, Flat Lead

TA78L012AP,T6F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

package: TO-226-3, TO-92-3 Long Body

TA78L005AP(TE6,F,M

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

package: TO-226-3, TO-92-3 Long Body

TA78DS12BP,F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

package: TO-226-3, TO-92-3 Long Body

TA48L02F(TE12L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 2V 150MA PW-MINI

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 100mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 800µA ~ 5mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI (SOT-89)

package: TO-243AA

TB6575FNG,C,8,EL

Toshiba Semiconductor and Storage

IC MOTOR CONTROLLER PAR 24SSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: CMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: -
• Operating Temperature: -30°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-LSSOP (0.220", 5.60mm Width)
• Supplier Device Package: 24-SSOP

package: 24-LSSOP (0.220", 5.60mm Width)

TC7W32FUTE12LF

Toshiba Semiconductor and Storage

IC GATE OR 2CH 2-INP SM8

• Logic Type: OR Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SM8
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

package: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TC74HC4052APF

Toshiba Semiconductor and Storage

IC MUX/DEMUX DUAL 4X1 16DIP

• Switch Circuit: SP4T
• Multiplexer/Demultiplexer Circuit: 4:1
• Number of Circuits: 2
• On-State Resistance (Max): 100 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm
• Voltage - Supply, Single (V+): 2 V ~ 6 V
• Voltage - Supply, Dual (V±): ±2 V ~ 6 V
• Switch Time (Ton, Toff) (Max): 18ns, 29ns (Typ)
• -3db Bandwidth: 140MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 2pF, 40pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -50dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

package: 16-DIP (0.300", 7.62mm)

TC7USB40MU,LF

Toshiba Semiconductor and Storage

IC USB SWITCH SPDT DUAL 10UQFN

• Applications: USB
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: SPDT
• Number of Channels: 2
• On-State Resistance (Max): 14 Ohm
• Voltage - Supply, Single (V+): 2.3 V ~ 4.3 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 1.5GHz
• Features: USB 2.0
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 10-UFQFN
• Supplier Device Package: 10-UQFN (1.8x1.4)

package: 10-UFQFN

TL1F2-WH1,L

Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

• Color: White, Neutral
• CCT (K): 4000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 120 lm (105 lm ~ 135 lm)
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.85V
• Lumens/Watt @ Current - Test: 120 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 550mA
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 2020 (5050 Metric)
• Supplier Device Package: 6450
• Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
• Height - Seated (Max): 0.057" (1.45mm)

package: 2020 (5050 Metric)

TL2FL-DW1,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 6500K 2SMD

• Color: White, Cool
• CCT (K): 6500K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 23 lm (21 lm ~ 26 lm)
• Current - Test: 65mA
• Voltage - Forward (Vf) (Typ): 2.82V
• Lumens/Watt @ Current - Test: 125 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 100mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3014 Metric)
• Supplier Device Package: 3014
• Size / Dimension: 0.118" L x 0.055" W (3.00mm x 1.40mm)
• Height - Seated (Max): 0.030" (0.77mm)

package: 1206 (3014 Metric)

TLWF1109(T11(O

Toshiba Semiconductor and Storage

LED WHITE 4SMD

• Color: White
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 3200mcd
• Lens Style/Size: Oval with Flat Top
• Voltage - Forward (Vf) (Typ): 3.5V
• Current - Test: 40mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: -
• Wavelength - Peak: -
• Features: -
• Package / Case: 4-SMD, J-Lead
• Supplier Device Package: -
• Size / Dimension: 3.20mm L x 2.90mm W
• Height (Max): 2.10mm

package: 4-SMD, J-Lead

TLP3083(TP1,F

Toshiba Semiconductor and Storage

OPTOISO 5KV TRIAC 6SMD

• Output Type: Triac
• Zero Crossing Circuit: Yes
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Voltage - Off State: 800V
• Static dV/dt (Min): 2kV/µs (Typ)
• Current - LED Trigger (Ift) (Max): 5mA
• Current - On State (It (RMS)) (Max): 100mA
• Current - Hold (Ih): 600µA (Typ)
• Turn On Time: -
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: 6-SMD
• Approvals: CQC, CSA, cUL, UL

package: 6-SMD (5 Leads), Gull Wing

TLP2108(TP,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH PSH PULL 8SOIC

• Number of Channels: 2
• Inputs - Side 1/Side 2: 2/0
• Voltage - Isolation: 2500Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 25mA
• Data Rate: 5Mbps
• Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 20 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

TLP2962(TP1,F)

Toshiba Semiconductor and Storage

OPTOISO 5KV OPEN COLLECTOR 8SMD

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Input Type: DC
• Output Type: Open Collector
• Current - Output / Channel: 50mA
• Data Rate: 15MBd
• Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
• Rise / Fall Time (Typ): 3ns, 12ns
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Gull Wing
• Supplier Device Package: 8-SMD

package: 8-SMD, Gull Wing

TCR3UG25A,LF

Toshiba Semiconductor and Storage

IC REG LIN 2.5V 300MA 4WCSP-F

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.327V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Thermal Shutdown
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, WLCSP
• Supplier Device Package: 4-WCSP-F (0.65x0.65)

package: 4-XFBGA, WLCSP

TCR3DF285,LM(CT

Toshiba Semiconductor and Storage

300MA LDO VOUT=2.85V DROPOUT=230

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.27V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

7UL2G08FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

• Logic Type: AND Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 0.9V ~ 3.6V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.7V ~ 0.8V
• Logic Level - High: 1.7V ~ 2V
• Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: US8
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

package: -

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TC7WH241FU-TE12L

Toshiba Semiconductor and Storage

IC BUS BUFFER TRI-ST DUAL SM8

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: -
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: 8-SSOP

package: -

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RN4902FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 10kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

package: -

RN1415-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: -