Toshiba Semiconductor and Storage Producten

TK25E06K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 25A
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 12.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

package: TO-220-3

SSM3K337R,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 38V 2A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 38V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 1.7V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 2A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23F
• Package / Case: SOT-23-3 Flat Leads

package: SOT-23-3 Flat Leads

RN1112(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: SC-75, SOT-416

RN1423TE85LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 200MW SMINI

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 300MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: TO-236-3, SC-59, SOT-23-3

RN2114(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: SC-75, SOT-416

RN1105MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W VESM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

package: SOT-723

2SC4915-Y,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 550MHz
• Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
• Gain: 17dB ~ 23dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: SC-75, SOT-416

HN2C01FEYTE85LF

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 60MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

package: SOT-563, SOT-666

CLS03(T6L,CANO-O,Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Capacitance @ Vr, F: 345pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -40°C ~ 125°C

package: L-FLAT?

CUS05F30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Capacitance @ Vr, F: 120pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: USC
• Operating Temperature - Junction: -

package: SC-76, SOD-323

TA78L009AP,F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

package: TO-226-3, TO-92-3 Long Body

TA58M05S,SUMISQ(M

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: LSTM

package: TO-220-3 Full Pack

TA58L06S,Q(J

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: 3-HSIP

package: TO-220-3 Full Pack

TBD62004AFWG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16PSOP

• Switch Type: General Purpose
• Number of Outputs: 7
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.8A
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOP

package: 16-SOIC (0.154", 3.90mm Width)

TC74HC138AFN(F,M)

Toshiba Semiconductor and Storage

IC DECODER 3-TO-8 LINE 16-SOL

• Type: Decoder/Demultiplexer
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOL

package: 16-SOIC (0.154", 3.90mm Width)

74HCT540D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER INVERT 5.5V 20SOIC

• Logic Type: Buffer, Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 6mA, 6mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

package: 20-SOIC (0.295", 7.50mm Width)

TC7SET125F,LJ(CT

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V SMV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

TC4W66FU,LF

Toshiba Semiconductor and Storage

IC SWITCH DUAL SPST 8SSOP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 2
• On-State Resistance (Max): 160 Ohm
• Channel-to-Channel Matching (ΔRon): 4 Ohm
• Voltage - Supply, Single (V+): 3 V ~ 18 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): -
• -3db Bandwidth: 30MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -50dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: SM8

package: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TL1WK-NW1,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

• Color: White, Cool
• CCT (K): 5000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 22 lm (18 lm ~ 26 lm)
• Current - Test: 80mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 131 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 180mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SMD
• Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
• Height - Seated (Max): 0.015" (0.39mm)

package: 2-SMD, No Lead

TLP5751(TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 35kV/µs
• Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 15ns, 8ns
• Current - Output High, Low: 1A, 1A
• Current - Peak Output: 1A
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 15 V ~ 30 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 6-SO
• Approvals: CQC, CSA, cUL, UL

package: 6-SOIC (0.295", 7.50mm Width)

TLP700H(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
• Pulse Width Distortion (Max): 250ns
• Rise / Fall Time (Typ): 15ns, 8ns
• Current - Output High, Low: 2A, 2A
• Current - Peak Output: 2.5A
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 15 V ~ 30 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.268", 6.80mm Width)
• Supplier Device Package: 6-SDIP Gull Wing
• Approvals: cUL, UL

package: 6-SOIC (0.268", 6.80mm Width)

74VHC157FT

Toshiba Semiconductor and Storage

X34 PB-F 2-CHANNEL MULTIPLEXER M

• Type: Multiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOPB

package: 16-TSSOP (0.173", 4.40mm Width)

RN1308-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

package: -

RN2103-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 22 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: -

TCR2LN33-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.3V I=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.28V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

package: -

RN1314-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A USM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 1 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

package: -

SSM3K7002KFU-LXH

Toshiba Semiconductor and Storage

SMOS LOW RON NCH IO: 0.4A VDSS:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: USM
• Package / Case: SC-70, SOT-323

package: -

TK4R1A10PL-S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 54W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

package: -