Taiwan Semiconductor Corporation Producten

BZD27C220PHRFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 220V, 1000MW, %, A

• Voltage - Zener (Nom) (Vz): 220.5V
• Tolerance: ±5.66%
• Power - Max: 1W
• Impedance (Max) (Zzt): 900 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 160V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

BZD27C9V1P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 9.1V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 9.05V
• Tolerance: ±6.07%
• Power - Max: 1W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

BZD27C82P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±6.09%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 62V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

2M33Z R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 2000MW, %, DO

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 25.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

package: DO-204AC, DO-15, Axial

BZD27C68PHMTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5.88%
• Power - Max: 1W
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 51V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1M160Z R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 160V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 160V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1100 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 121.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

ZM4755A L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, 5%, M

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

package: DO-213AB, MELF

BZT52C12 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 500MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 90nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

package: SOD-123F

BZT52B51 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 500MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 180 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 35.7V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

package: SOD-123F

BZV55B4V7 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.7V, 500MW, 2%, M

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

package: DO-213AC, MINI-MELF, SOD-80

BZD27C15P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 14.7V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

BZD27C13P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 13.25V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1SMA4751 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 1000MW, %, DO

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

package: DO-214AC, SMA

TS19751ACS RLG

Taiwan Semiconductor Corporation

IC LED DRVR OFFL 8SOP

• Type: AC DC Offline Switcher
• Topology: Step-Down (Buck)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 8V
• Voltage - Supply (Max): 19V
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: Lighting
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: 8-SOIC (0.154", 3.90mm Width)

HER3L06G

Taiwan Semiconductor Corporation

75NS, 3A, 600V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 54pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

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MTZJ5V1SC

Taiwan Semiconductor Corporation

DO-34, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 5.1 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

package: -

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BZY55B33-RBG

Taiwan Semiconductor Corporation

DIODE ZENER 33V 500MW 0805

• Voltage - Zener (Nom) (Vz): 33 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 24 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

package: -

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BZT52C56-G

Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 56 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

package: -

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PU1JFS

Taiwan Semiconductor Corporation

25NS, 1A, 600V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

BZX79C75

Taiwan Semiconductor Corporation

DO-35, 500MW, 5%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 75 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 255 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

package: -

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TSM150P04LCS

Taiwan Semiconductor Corporation

-40, -22, SINGLE P-CHANNEL

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: -

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SRT19H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 1A TS-1

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 90 V
• Capacitance @ Vr, F: 28pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

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PU2BM

Taiwan Semiconductor Corporation

25NS, 2A, 100V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 28 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 100 V
• Capacitance @ Vr, F: 18pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: Micro SMA
• Operating Temperature - Junction: -55°C ~ 175°C

package: -

SF2L6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

SR503

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 5A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 125°C

package: -

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S1MLWH

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A SOD123W

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 175°C

package: -

1N4760AH

Taiwan Semiconductor Corporation

DIODE ZENER 68V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 68 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: -

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SR105H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 1A DO204AL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

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