Pagina 146 - Taiwan Semiconductor Corporation Producten | Heisener Electronics
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Taiwan Semiconductor Corporation Producten

Archief 4.299
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Voorraad
Aantal
BZD27C91PHRFG
Taiwan Semiconductor Corporation

DIODE, ZENER, 91V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 90.5V
  • Tolerance: ±6.07%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 68V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad6.656
BZD27C43P RQG
Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 43V
  • Tolerance: ±6.97%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 33V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad6.784
1SMB5946HM4G
Taiwan Semiconductor Corporation

DIODE, ZENER, 75V, 3000MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 75V
  • Tolerance: ±5%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 140 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 56V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
package: DO-214AA, SMB
Voorraad7.184
1N4752A A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 1000MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 25.1V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
package: DO-204AL, DO-41, Axial
Voorraad3.792
1N4747A R1G
Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 1000MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 20V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 70 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 15.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
package: DO-204AL, DO-41, Axial
Voorraad2.160
BZD17C100P RQG
Taiwan Semiconductor Corporation

DIODE, ZENER, 100V, 800MW, %, SU

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±6%
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad5.584
BZX55B3V3 A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 3.3V, 500MW, 2%, D

  • Voltage - Zener (Nom) (Vz): 3.3V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
package: DO-204AH, DO-35, Axial
Voorraad6.688
TS19601CP5 ROG
Taiwan Semiconductor Corporation

IC LED DRVR LINEAR TO252

  • Type: Linear
  • Topology: -
  • Internal Switch(s): Yes
  • Number of Outputs: 1
  • Voltage - Supply (Min): 5V
  • Voltage - Supply (Max): 50V
  • Voltage - Output: 75V
  • Current - Output / Channel: 700mA
  • Frequency: -
  • Dimming: -
  • Applications: Backlight
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-6, DPak (5 Leads + Tab)
  • Supplier Device Package: TO-252-5
package: TO-252-6, DPak (5 Leads + Tab)
Voorraad7.888
GBU1004H
Taiwan Semiconductor Corporation

10A, 400V, STANDARD BRIDGE RECTI

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP, GBU
  • Supplier Device Package: GBU
package: -
Voorraad3.000
MBRF30L45CT
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 45V 30A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 740 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 45 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
package: -
Request a Quote
BZS55C30
Taiwan Semiconductor Corporation

1206 (CERAMICS), 500MW, 5%, SMAL

  • Voltage - Zener (Nom) (Vz): 30 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 22 V
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
package: -
Request a Quote
SFAS806GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad4.800
HS1KLW
Taiwan Semiconductor Corporation

75NS, 1A, 800V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad60.000
BZT52B3V6-G
Taiwan Semiconductor Corporation

SOD-123, 410MW, 2%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 3.6 V
  • Tolerance: ±2%
  • Power - Max: 410 mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
package: -
Request a Quote
BZT52B2V7S-R9G
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 2.7 V
  • Tolerance: ±2%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 18 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
package: -
Voorraad30.000
SBS26
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 60V 2A ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 60 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 50 µA @ 60 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
package: -
Request a Quote
MBRAD2045H
Taiwan Semiconductor Corporation

20A, 45V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 45 V
  • Capacitance @ Vr, F: 927pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: ThinDPAK
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad13.500
ESH2DA
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad45.000
MBR20L100CTH
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 100V 20A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 100 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
package: -
Request a Quote
KBU802G-T0
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 100V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
package: -
Request a Quote
MBRF20L100CTH
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 100V ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 100 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
package: -
Request a Quote
TSM300NB06CR-RLG
Taiwan Semiconductor Corporation

MOSFET N-CH 60V 6A/27A 8PDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5.2x5.75)
  • Package / Case: 8-PowerLDFN
package: -
Voorraad2.598
SF804G
Taiwan Semiconductor Corporation

35NS, 8A, 200V, SUPER FAST RECOV

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
package: -
Voorraad3.000
BZX584B39-RSG
Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 39 V
  • Tolerance: ±2%
  • Power - Max: 150 mW
  • Impedance (Max) (Zzt): 130 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
package: -
Voorraad24.000
MTZJ9V1SB
Taiwan Semiconductor Corporation

DO-34, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 9.1 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 25 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 6 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AG, DO-34, Axial
  • Supplier Device Package: DO-34
package: -
Request a Quote
1PGSMB5932H
Taiwan Semiconductor Corporation

DIODE ZENER 20V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 20 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 14 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
package: -
Request a Quote
HER601G
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
AZ23C6V8
Taiwan Semiconductor Corporation

SOT-23, 300MW, 5%, SMALL SIGNAL

  • Configuration: 1 Pair Common Anode
  • Voltage - Zener (Nom) (Vz): 6.8 V
  • Tolerance: ±5%
  • Power - Max: 300 mW
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 3 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: -
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