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Taiwan Semiconductor Corporation Producten

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BZD27C100PHMTG
Taiwan Semiconductor Corporation

DIODE, ZENER, 100V, 1000MW, %, A

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±6%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad2.864
BZD27C160P RTG
Taiwan Semiconductor Corporation

DIODE, ZENER, 160V, 1000MW, %, S

  • Voltage - Zener (Nom) (Vz): 162V
  • Tolerance: ±5.55%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 350 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 120V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad7.584
ZM4747A L0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 1000MW, 5%, M

  • Voltage - Zener (Nom) (Vz): 20V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 22 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 15.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
package: DO-213AB, MELF
Voorraad3.552
BZT52C33 RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 500MW, 5%, SO

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 45nA @ 23V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
package: SOD-123F
Voorraad6.736
BZT52B5V1-G RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 5.1V, 410MW, 2%, S

  • Voltage - Zener (Nom) (Vz): 5.1V
  • Tolerance: ±2%
  • Power - Max: 410mW
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 2V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
package: SOD-123
Voorraad7.968
BZX84C6V8 RFG
Taiwan Semiconductor Corporation

DIODE, ZENER, 6.8V, 300MW, 5%, S

  • Voltage - Zener (Nom) (Vz): 6.8V
  • Tolerance: ±5%
  • Power - Max: 300mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 4V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad2.416
BZD27C7V5P RVG
Taiwan Semiconductor Corporation

DIODE, ZENER, 7.5V, 1000MW, %, S

  • Voltage - Zener (Nom) (Vz): 7.45V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 2 Ohms
  • Current - Reverse Leakage @ Vr: 50µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad7.184
TS8P05GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
package: 4-SIP, TS-6P
Voorraad5.824
TS6P06G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
package: 4-SIP, TS-6P
Voorraad4.160
GBLA06 D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
package: 4-SIP, GBL
Voorraad4.432
TQM070NH04CR-RLG
Taiwan Semiconductor Corporation

40V, 54A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 46.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5x6)
  • Package / Case: 8-PowerTDFN
package: -
Voorraad14.940
BZT52C13S-R9G
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 13 V
  • Tolerance: ±5%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 90 nA @ 8 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
package: -
Voorraad30.000
TSD3GALH
Taiwan Semiconductor Corporation

3A, 600V, STANDARD RECOVERY RECT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Request a Quote
TS20P03G
Taiwan Semiconductor Corporation

DIODE BRIDGE 200V 20A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
package: -
Request a Quote
1N5406GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad11.250
MBR30L100CT
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 100V 30A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
package: -
Request a Quote
BZT52C2V7S
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 2.7 V
  • Tolerance: ±5%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 18 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
package: -
Request a Quote
TSM210N02CX
Taiwan Semiconductor Corporation

20V, 6.7A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 0.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Request a Quote
BZD27C22PW
Taiwan Semiconductor Corporation

DIODE ZENER 22V 1W SOD123W

  • Voltage - Zener (Nom) (Vz): 22 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 16 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
package: -
Voorraad30.792
1SMA5941H
Taiwan Semiconductor Corporation

DIODE ZENER 47V 1.5W DO214AC

  • Voltage - Zener (Nom) (Vz): 47 V
  • Tolerance: ±5%
  • Power - Max: 1.5 W
  • Impedance (Max) (Zzt): 67 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
package: -
Request a Quote
TS34063CS
Taiwan Semiconductor Corporation

IC REG BUCK BOOST ADJ 1.5A 8SOP

  • Function: Step-Up, Step-Down
  • Output Configuration: Positive
  • Topology: Boost, Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 3V
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 1.25V
  • Voltage - Output (Max): 40V
  • Current - Output: 1.5A (Switch)
  • Frequency - Switching: Up to 100kHz
  • Synchronous Rectifier: No
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Request a Quote
TSSE3H45
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 3A SOD123HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad60.000
HER3005PT
Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 30A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
package: -
Voorraad2.700
TSZU52C9V1
Taiwan Semiconductor Corporation

603, 150MW, 5%, SMALL SIGNAL ZEN

  • Voltage - Zener (Nom) (Vz): 9.1 V
  • Tolerance: ±4.99%
  • Power - Max: 150 mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 7 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0603 (1608 Metric)
  • Supplier Device Package: 0603
package: -
Request a Quote
BZT55C36
Taiwan Semiconductor Corporation

QMMELF, 500MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 36 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 27 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: QMMELF
package: -
Request a Quote
BZT55B27
Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 27 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 20 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: QMMELF
package: -
Request a Quote
1N4757AH
Taiwan Semiconductor Corporation

DIODE ZENER 51V 1W DO204AL

  • Voltage - Zener (Nom) (Vz): 51 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 95 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 38.8 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
package: -
Request a Quote
SR520H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote