Pagina 29 - STMicroelectronics Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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STMicroelectronics Producten - Transistors - FET's, MOSFET's - Single

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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot STU6N65K3
STMicroelectronics

MOSFET N-CH 650V 5.4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad65.244
MOSFET (Metal Oxide)
650V
5.4A (Tc)
10V
4.5V @ 50µA
33nC @ 10V
880pF @ 50V
±30V
-
110W (Tc)
1.3 Ohm @ 2.7A, 10V
150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
STFI10N65K3
STMicroelectronics

MOSFET N-CH 650V 10A I2PAKFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
package: TO-262-3 Full Pack, I2Pak
Voorraad14.640
MOSFET (Metal Oxide)
650V
10A (Tc)
10V
4.5V @ 100µA
42nC @ 10V
1180pF @ 25V
±30V
-
35W (Tc)
1 Ohm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
STFI7N80K5
STMicroelectronics

MOSFET N-CH 800V 6A I2PAK-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
package: TO-262-3 Full Pack, I2Pak
Voorraad15.882
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
5V @ 100µA
13.4nC @ 10V
360pF @ 100V
±30V
-
25W (Tc)
1.2 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
STI13NM60N
STMicroelectronics

MOSFET N-CH 600V 11A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad20.052
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
4V @ 250µA
30nC @ 10V
790pF @ 50V
±25V
-
90W (Tc)
360 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot STP9NK65ZFP
STMicroelectronics

MOSFET N-CH 650V 6.4A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad872.832
MOSFET (Metal Oxide)
650V
6.4A (Tc)
10V
4.5V @ 100µA
41nC @ 10V
1145pF @ 25V
±30V
-
30W (Tc)
1.2 Ohm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STP11N52K3
STMicroelectronics

MOSFET N-CH 525V 10A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 510 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad3.856
MOSFET (Metal Oxide)
525V
10A (Tc)
10V
4.5V @ 50µA
51nC @ 10V
1400pF @ 50V
±30V
-
125W (Tc)
510 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
STFI10N62K3
STMicroelectronics

MOSFET N CH 620V 8.4A I2PAKFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
package: TO-262-3 Full Pack, I2Pak
Voorraad13.254
MOSFET (Metal Oxide)
620V
8.4A (Tc)
10V
4.5V @ 100µA
42nC @ 10V
1250pF @ 50V
±30V
-
30W (Tc)
750 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
STU7N105K5
STMicroelectronics

MOSFET N-CH 1050V 4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1050V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad16.488
MOSFET (Metal Oxide)
1050V
4A (Tc)
10V
5V @ 100µA
17nC @ 10V
380pF @ 100V
±30V
-
110W (Tc)
2 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot STP200NF03
STMicroelectronics

MOSFET N-CH 30V 120A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad463.788
MOSFET (Metal Oxide)
30V
120A (Tc)
10V
4V @ 250µA
140nC @ 10V
4950pF @ 25V
±20V
-
300W (Tc)
3.6 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STU10NM60N
STMicroelectronics

MOSFET N-CH 600V 10A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad648.480
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
4V @ 250µA
19nC @ 10V
540pF @ 50V
±25V
-
70W (Tc)
550 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
STB14NM65N
STMicroelectronics

MOSFET N-CH 650V 12A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad13.806
MOSFET (Metal Oxide)
650V
12A (Tc)
10V
4V @ 250µA
45nC @ 10V
1300pF @ 50V
±25V
-
125W (Tc)
380 mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STFI15N65M5
STMicroelectronics

MOSFET N CH 650V 11A I2PAKFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
package: TO-262-3 Full Pack, I2Pak
Voorraad12.438
MOSFET (Metal Oxide)
650V
11A (Tc)
10V
5V @ 250µA
22nC @ 10V
816pF @ 100V
±25V
-
30W (Tc)
340 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
hot STP11NM50N
STMicroelectronics

MOSFET N-CH 500V 9A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 470 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad390.000
MOSFET (Metal Oxide)
500V
8.5A (Tc)
10V
4V @ 250µA
19nC @ 10V
547pF @ 50V
±25V
-
70W (Tc)
470 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
STD7NM80-1
STMicroelectronics

MOSFET N-CH 800V 6.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad20.412
MOSFET (Metal Oxide)
800V
6.5A (Tc)
10V
5V @ 250µA
18nC @ 10V
620pF @ 25V
±30V
-
90W (Tc)
1.05 Ohm @ 3.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot STU5N95K3
STMicroelectronics

MOSFET N-CH 950V 4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad360.000
MOSFET (Metal Oxide)
950V
4A (Tc)
10V
5V @ 100µA
19nC @ 10V
460pF @ 25V
±30V
-
90W (Tc)
3.5 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot STB11NM60FDT4
STMicroelectronics

MOSFET N-CH 600V 11A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad175.920
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
5V @ 250µA
40nC @ 10V
900pF @ 25V
±30V
-
160W (Tc)
450 mOhm @ 5.5A, 10V
-
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STFI24N60M2
STMicroelectronics

MOSFET N CH 600V 18A TO281

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
package: TO-262-3 Full Pack, I2Pak
Voorraad8.580
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
4V @ 250µA
29nC @ 10V
1060pF @ 100V
±25V
-
30W (Tc)
190 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
hot STFI10NK60Z
STMicroelectronics

MOSFET N-CH 600V 10A I2PAK FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
package: TO-262-3 Full Pack, I2Pak
Voorraad6.128
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
4.5V @ 250µA
70nC @ 10V
1370pF @ 25V
±30V
-
35W (Tc)
750 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
hot STU60N55F3
STMicroelectronics

MOSFET N-CH 55V 80A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad6.064
MOSFET (Metal Oxide)
55V
80A (Tc)
10V
4V @ 250µA
45nC @ 10V
2200pF @ 25V
±20V
-
110W (Tc)
8.5 mOhm @ 32A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot STF9NM60N
STMicroelectronics

MOSFET N-CH 600V 6.5A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 452pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad625.068
MOSFET (Metal Oxide)
600V
6.5A (Tc)
10V
4V @ 250µA
17.4nC @ 10V
452pF @ 50V
±25V
-
25W (Tc)
745 mOhm @ 3.25A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STFI6N80K5
STMicroelectronics

MOSFET N-CH 800V 4.5A I2PAK-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
  • Vgs (Max): 30V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
package: TO-262-3 Full Pack, I2Pak
Voorraad15.174
MOSFET (Metal Oxide)
800V
4.5A (Tc)
10V
5V @ 100µA
13nC @ 10V
270pF @ 100V
30V
-
25W (Tc)
1.6 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
hot STU150N3LLH6
STMicroelectronics

MOSFET N-CH 30V 80A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad36.852
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2.5V @ 250µA
40nC @ 4.5V
4040pF @ 25V
±20V
-
110W (Tc)
3.3 mOhm @ 40A, 10V
175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot STB100NF03L-03T4
STMicroelectronics

MOSFET N-CH 30V 100A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad45.372
MOSFET (Metal Oxide)
30V
100A (Tc)
4.5V, 10V
2.5V @ 250µA
88nC @ 5V
6200pF @ 25V
±16V
-
300W (Tc)
3.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STFI6N62K3
STMicroelectronics

MOSFET N CH 620V 5.5A I2PAKFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
package: TO-262-3 Full Pack, I2Pak
Voorraad12.468
MOSFET (Metal Oxide)
620V
5.5A (Tc)
10V
4.5V @ 50µA
34nC @ 10V
875pF @ 50V
±30V
-
30W (Tc)
1.2 Ohm @ 2.8A, 10V
150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
STB85NF55LT4
STMicroelectronics

MOSFET N-CH 55V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad23.982
MOSFET (Metal Oxide)
55V
80A (Tc)
5V, 10V
2.5V @ 250µA
110nC @ 5V
4050pF @ 25V
±15V
-
300W (Tc)
8 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STB16N65M5
STMicroelectronics

MOSFET N-CH 650V 12A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad390.000
MOSFET (Metal Oxide)
650V
12A (Tc)
10V
5V @ 250µA
31nC @ 10V
1250pF @ 100V
±25V
-
90W (Tc)
299 mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STU2N105K5
STMicroelectronics

MOSFET N-CH 1050V 1.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1050V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 750mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad27.618
MOSFET (Metal Oxide)
1050V
1.5A (Tc)
10V
5V @ 100µA
10nC @ 10V
115pF @ 100V
±30V
-
60W (Tc)
8 Ohm @ 750mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
STU80N4F6
STMicroelectronics

MOSFET N CH 40V 80A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad25.638
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 250µA
36nC @ 10V
2150pF @ 25V
±20V
-
70W (Tc)
6.3 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251
TO-251-3 Short Leads, IPak, TO-251AA