Rohm Semiconductor Producten

QS5U23TR

Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT5
• Package / Case: SOT-23-5 Thin, TSOT-23-5

package: SOT-23-5 Thin, TSOT-23-5

QH8MA4TCR

Rohm Semiconductor

MOSFET N/P-CH 30V TSMT8

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A, 8A
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
• Power - Max: 1.5W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

package: 8-SMD, Flat Lead

DTD543EETL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

package: SC-75, SOT-416

RF301B2STL

Rohm Semiconductor

DIODE GEN PURP 200V 3A CPD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: CPD
• Operating Temperature - Junction: 150°C (Max)

package: TO-252-3, DPak (2 Leads + Tab), SC-63

BA033FP-E2

Rohm Semiconductor

IC REG LINEAR 3.3V 1A TO252

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 25V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2.5mA ~ 5mA
• PSRR: 55dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)

package: TO-252-3, DPak (2 Leads + Tab), SC-63

BR24G32NUX-3TTR

Rohm Semiconductor

IC EEPROM 32KBIT 400KHZ 8VSON

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 32Kb (4K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: VSON008X2030

package: 8-UFDFN Exposed Pad

RPM7157-R

Rohm Semiconductor

RECEIVER REMOTE CTRL 56.9KHZ STR

• Sensing Distance: 15m
• B.P.F. Center Frequency: 56.9kHz
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply: 1.6mA
• Orientation: Side View
• Mounting Type: Through Hole
• Operating Temperature: -10°C ~ 75°C (TA)

package: -

MCR25JZHJLR27

Rohm Semiconductor

RES SMD 0.27 OHM 5% 1/2W 1210

• Resistance: 270 mOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1210 (3225 Metric)

MCR10EZPF2202

Rohm Semiconductor

RES SMD 22K OHM 1% 1/8W 0805

• Resistance: 22 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

MCR03EZPFX1542

Rohm Semiconductor

RES SMD 15.4K OHM 1% 1/10W 0603

• Resistance: 15.4 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0603 (1608 Metric)

ESR10EZPF7150

Rohm Semiconductor

RES SMD 715 OHM 1% 0.4W 0805

• Resistance: 715 Ohms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

ESR18EZPF2703

Rohm Semiconductor

RES SMD 270K OHM 1% 1/3W 1206

• Resistance: 270 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

KTR10EZPJ435

Rohm Semiconductor

RES SMD 4.3M OHM 5% 1/8W 0805

• Resistance: 4.3 MOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

MCR50JZHJ332

Rohm Semiconductor

RES SMD 3.3K OHM 5% 1/2W 2010

• Resistance: 3.3 kOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

package: 2010 (5025 Metric)

MCR10ERTF3570

Rohm Semiconductor

RES SMD 357 OHM 1% 1/8W 0805

• Resistance: 357 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

MCR100JZHFSR051

Rohm Semiconductor

RES SMD 0.051 OHM 1% 1W 2512

• Resistance: 51 mOhms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: 200/ +800ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

package: 2512 (6432 Metric)

MCR03ERTF8873

Rohm Semiconductor

RES SMD 887K OHM 1% 1/10W 0603

• Resistance: 887 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0603 (1608 Metric)

BD9423EFV-E2

Rohm Semiconductor

6CH BOOST LED DRIVER WHICH CONST

• Type: -
• Topology: -
• Internal Switch(s): -
• Number of Outputs: -
• Voltage - Supply (Min): -
• Voltage - Supply (Max): -
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 40-VSSOP (0.213", 5.40mm Width) Exposed Pad
• Supplier Device Package: 40-HTSSOP-B

package: 40-VSSOP (0.213", 5.40mm Width) Exposed Pad

BD30HA5MEFJ-LBH2

Rohm Semiconductor

IC REG LINEAR 3V 500MA 8HTSOP-J

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 8V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.2V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.2mA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Soft Start
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HTSOP-J

package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

UDZLVFHTE-17100

Rohm Semiconductor

DIODE ZENER 100V 200MW UMD2

• Voltage - Zener (Nom) (Vz): 100 V
• Tolerance: ±6%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 200 nA @ 76 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: UMD2

package: -

BD18IA5VEFJ-ME2

Rohm Semiconductor

500MA 1.8V, FIXED OUTPUT, HIGH-A

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.9V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): 700 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable, Soft Start
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HTSOP-J

package: -

RGCL80TK60DGC11

Rohm Semiconductor

IGBT TRNCH FIELD 600V 35A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 35 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
• Power - Max: 57 W
• Switching Energy: 1.11mJ (on), 1.68mJ (off)
• Input Type: Standard
• Gate Charge: 98 nC
• Td (on/off) @ 25°C: 53ns/227ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 58 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

package: -

UT6K30TCR

Rohm Semiconductor

MOSFET 2N-CH 60V 3A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

package: -

BD63621MUV-E2

Rohm Semiconductor

36V STEPPER MOTOR DRIVER

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Pre-Driver - Half Bridge (4)
• Interface: On/Off
• Technology: DMOS
• Step Resolution: 1, 1/2, 1/4
• Applications: Camera, Printer
• Current - Output: 2A
• Voltage - Supply: 8V ~ 28V
• Voltage - Load: -
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-VFQFN Exposed Pad
• Supplier Device Package: VQFN028V5050

package: -

2SCR573D3TL1

Rohm Semiconductor

TRANS NPN 50V 3A TO252

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3 A
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
• Power - Max: 10 W
• Frequency - Transition: 320MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

package: -

DTC144EMFHAT2L

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A VMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3

package: -

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RBR3L30BDDTE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDS

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 80 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C

package: -

PDZVTFTR4-7B

Rohm Semiconductor

DIODE ZENER 4.95V 1W PMDTM

• Voltage - Zener (Nom) (Vz): 4.95 V
• Tolerance: ±5.32%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 20 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM

package: -