Pagina 73 - ON Semiconductor Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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ON Semiconductor Producten - Transistors - FET's, MOSFET's - Single

Archief 2.260
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot 2SK4197LS
ON Semiconductor

MOSFET N-CH 600V 3.5A TO-220FI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad99.000
MOSFET (Metal Oxide)
600V
3.5A (Tc)
10V
5V @ 1mA
11nC @ 10V
260pF @ 30V
±30V
-
2W (Ta), 28W (Tc)
3.25 Ohm @ 1.8A, 10V
150°C (TJ)
Through Hole
TO-220FI(LS)
TO-220-3 Full Pack
2SK4196LS
ON Semiconductor

MOSFET N-CH 500V 5.5A TO-220FI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad2.400
MOSFET (Metal Oxide)
500V
5.5A (Ta)
10V
5V @ 1mA
14.6nC @ 10V
360pF @ 30V
±30V
-
2W (Ta), 30W (Tc)
1.56 Ohm @ 2.8A, 10V
150°C (TJ)
Through Hole
TO-220FI(LS)
TO-220-3 Full Pack
2SK4177-E
ON Semiconductor

MOSFET N-CH 1500V 2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad7.648
MOSFET (Metal Oxide)
1500V
2A (Ta)
10V
3.5V @ 1mA
37.5nC @ 10V
380pF @ 30V
±20V
-
80W (Tc)
13 Ohm @ 1A, 10V
150°C (TJ)
Surface Mount
SMP-FD
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot 2SK4116LS
ON Semiconductor

MOSFET N-CH 400V 12A TO-220FI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad5.840
MOSFET (Metal Oxide)
400V
8.9A (Tc)
10V
5V @ 1mA
24.5nC @ 10V
650pF @ 30V
±30V
-
2W (Ta), 33W (Tc)
540 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220FI(LS)
TO-220-3 Full Pack
2SK4099LS
ON Semiconductor

MOSFET N-CH 600V 8.5A TO-220FI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 940 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad7.968
MOSFET (Metal Oxide)
600V
6.9A (Tc)
10V
5V @ 1mA
29nC @ 10V
750pF @ 30V
±30V
-
2W (Ta), 35W (Tc)
940 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FI(LS)
TO-220-3 Full Pack
hot 2SK3827
ON Semiconductor

MOSFET N-CH 100V 40A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad5.904
MOSFET (Metal Oxide)
100V
40A (Ta)
4V, 10V
2.6V @ 1mA
79nC @ 10V
4200pF @ 20V
±20V
-
1.75W (Ta), 60W (Tc)
34 mOhm @ 20A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
2SK3826
ON Semiconductor

MOSFET N-CH 100V 26A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad5.088
MOSFET (Metal Oxide)
100V
26A (Ta)
4V, 10V
2.6V @ 1mA
42nC @ 10V
2150pF @ 20V
±20V
-
1.75W (Ta), 45W (Tc)
60 mOhm @ 13A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
2SK3824
ON Semiconductor

MOSFET N-CH 60V 60A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad7.168
MOSFET (Metal Oxide)
60V
60A (Ta)
4V, 10V
2.6V @ 1mA
67nC @ 10V
3500pF @ 20V
±20V
-
1.75W (Ta), 60W (Tc)
15 mOhm @ 30A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
hot 2SK3823
ON Semiconductor

MOSFET N-CH 60V 40A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad32.400
MOSFET (Metal Oxide)
60V
40A (Ta)
4V, 10V
2.6V @ 1mA
40nC @ 10V
1780pF @ 20V
±20V
-
1.75W (Ta), 45W (Tc)
27.5 mOhm @ 20A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
2SK3821-E
ON Semiconductor

MOSFET N-CH 100V 40A SMP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SMP
  • Package / Case: TO-220-3, Short Tab
package: TO-220-3, Short Tab
Voorraad4.432
MOSFET (Metal Oxide)
100V
40A (Ta)
4V, 10V
2.6V @ 1mA
73nC @ 10V
4200pF @ 20V
±20V
-
1.65W (Ta), 65W (Tc)
33 mOhm @ 20A, 10V
150°C (TJ)
Through Hole
SMP
TO-220-3, Short Tab
hot 2SK3821-DL-E
ON Semiconductor

MOSFET N-CH 100V 40A SMP-FD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad60.000
MOSFET (Metal Oxide)
100V
40A (Ta)
4V, 10V
2.6V @ 1mA
73nC @ 10V
4200pF @ 20V
±20V
-
1.65W (Ta), 65W (Tc)
33 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
SMP-FD
TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3820-DL-E
ON Semiconductor

MOSFET N-CH 100V 26A SMP-FD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad5.840
MOSFET (Metal Oxide)
100V
26A (Ta)
4V, 10V
-
44nC @ 10V
2150pF @ 20V
±20V
-
1.65W (Ta), 50W (Tc)
60 mOhm @ 13A, 10V
150°C (TJ)
Surface Mount
SMP-FD
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK3817-DL-E
ON Semiconductor

MOSFET N-CH 60V 60A SMP-FD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad5.632
MOSFET (Metal Oxide)
60V
60A (Ta)
-
2.6V @ 1mA
67nC @ 10V
3500pF @ 20V
-
-
1.65W (Ta), 65W (Tc)
15 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
SMP-FD
TO-252-3, DPak (2 Leads + Tab), SC-63
hot 2SK3816-DL-E
ON Semiconductor

MOSFET N-CH 60V 40A SMP-FD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad17.520
MOSFET (Metal Oxide)
60V
40A (Ta)
4V, 10V
2.6V @ 1mA
40nC @ 10V
1780pF @ 20V
±20V
-
1.65W (Ta), 50W (Tc)
26 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
SMP-FD
TO-252-3, DPak (2 Leads + Tab), SC-63
2SJ665-DL-E
ON Semiconductor

MOSFET P-CH 100V 27A SMP-FD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad4.704
MOSFET (Metal Oxide)
100V
27A (Ta)
4V, 10V
2.6V @ 1mA
74nC @ 10V
4200pF @ 20V
±20V
-
1.65W (Ta), 65W (Tc)
77 mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
SMP-FD
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SJ661-DL-E
ON Semiconductor

MOSFET P-CH 60V 38A SMP-FD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 19A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad6.416
MOSFET (Metal Oxide)
60V
38A (Ta)
4V, 10V
2.6V @ 1mA
80nC @ 10V
4360pF @ 20V
±20V
-
1.65W (Ta), 65W (Tc)
39 mOhm @ 19A, 10V
150°C (TJ)
Surface Mount
SMP-FD
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SMP3003-DL-E
ON Semiconductor

MOSFET P-CH 75V 100A SMP-FD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad7.376
MOSFET (Metal Oxide)
75V
100A (Ta)
-
-
280nC @ 10V
13400pF @ 20V
-
-
90W (Tc)
8 mOhm @ 50A, 10V
-
Surface Mount
SMP-FD
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFT1440-TL-E
ON Semiconductor

MOSFET N-CH 600V 1.5A TP-FA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.1 Ohm @ 800mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad7.216
MOSFET (Metal Oxide)
600V
1.5A (Ta)
10V
-
6.3nC @ 10V
130pF @ 30V
±30V
-
1W (Ta), 20W (Tc)
8.1 Ohm @ 800mA, 10V
150°C (TJ)
Surface Mount
TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
SFT1440-E
ON Semiconductor

MOSFET N-CH 600V 1.5A TP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.1 Ohm @ 800mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad4.544
MOSFET (Metal Oxide)
600V
1.5A (Ta)
10V
-
6.3nC @ 10V
130pF @ 30V
±30V
-
1W (Ta), 20W (Tc)
8.1 Ohm @ 800mA, 10V
150°C (TJ)
Through Hole
TP
TO-251-3 Short Leads, IPak, TO-251AA
hot SFT1431-TL-E
ON Semiconductor

MOSFET N-CH 35V 11A TP-FA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad128.400
MOSFET (Metal Oxide)
35V
11A (Ta)
4V, 10V
-
17.3nC @ 10V
960pF @ 20V
±20V
-
1W (Ta), 15W (Tc)
25 mOhm @ 5.5A, 10V
150°C (TJ)
Surface Mount
TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SFT1423-TL-E
ON Semiconductor

MOSFET N-CH 500V 2A TP-FA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad60.072
MOSFET (Metal Oxide)
500V
2A (Ta)
4V, 10V
-
8.7nC @ 10V
175pF @ 30V
±20V
-
1W (Ta), 20W (Tc)
4.9 Ohm @ 1A, 10V
150°C (TJ)
Surface Mount
TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
SCH1439-TL-H
ON Semiconductor

MOSFET N-CH 30V 3.5A SCH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
package: SOT-563, SOT-666
Voorraad7.552
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4V, 10V
-
5.6nC @ 10V
280pF @ 10V
±20V
-
1W (Ta)
72 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
SCH1434-TL-H
ON Semiconductor

MOSFET N-CH 30V 2A SCH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
package: SOT-563, SOT-666
Voorraad4.464
MOSFET (Metal Oxide)
30V
2A (Ta)
1.8V, 4.5V
-
1.7nC @ 4.5V
130pF @ 10V
±12V
-
800mW (Ta)
165 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
SCH1335-TL-H
ON Semiconductor

MOSFET P-CH 12V 2.5A SCH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 112 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
package: SOT-563, SOT-666
Voorraad2.304
MOSFET (Metal Oxide)
12V
2.5A (Ta)
1.8V, 4.5V
-
3.1nC @ 4.5V
270pF @ 6V
±10V
-
800mW (Ta)
112 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
hot SCH1331-TL-H
ON Semiconductor

MOSFET P-CH 12V 3A SCH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
package: SOT-563, SOT-666
Voorraad25.548
MOSFET (Metal Oxide)
12V
3A (Ta)
1.5V, 4.5V
-
5.6nC @ 4.5V
405pF @ 6V
±10V
-
1W (Ta)
84 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
NTP5863NG
ON Semiconductor

MOSFET N-CH 60V 97A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad7.216
MOSFET (Metal Oxide)
60V
97A (Tc)
10V
4V @ 250µA
55nC @ 10V
3200pF @ 25V
±20V
-
150W (Tc)
7.8 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
MCH6444-TL-H
ON Semiconductor

MOSFET N-CH 35V 2.5A MCPH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MCPH
  • Package / Case: 6-SMD, Flat Leads
package: 6-SMD, Flat Leads
Voorraad6.560
MOSFET (Metal Oxide)
35V
2.5A (Ta)
4V, 10V
-
4nC @ 10V
186pF @ 20V
±20V
-
800mW (Ta)
98 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
6-MCPH
6-SMD, Flat Leads
hot MCH6436-TL-E
ON Semiconductor

MOSFET N-CH 30V 6A MCPH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MCPH
  • Package / Case: 6-SMD, Flat Leads
package: 6-SMD, Flat Leads
Voorraad36.000
MOSFET (Metal Oxide)
30V
6A (Ta)
1.8V, 4.5V
-
7.5nC @ 4.5V
710pF @ 10V
±12V
-
1.5W (Ta)
34 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
6-MCPH
6-SMD, Flat Leads