Nexperia USA Inc. Producten

BUK964R2-60E,118

Nexperia USA Inc.

MOSFET N-CH 60V 100A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 11380pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 263W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PSMN1R6-40YLC:115

Nexperia USA Inc.

MOSFET N-CH 40V 100A POWERSO8-4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.95V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7790pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 288W (Tc)
• Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SOT-1023, 4-LFPAK

package: SOT-1023, 4-LFPAK

PSMN017-80PS,127

Nexperia USA Inc.

MOSFET N-CH 80V TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1573pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 103W (Tc)
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

PSMN2R6-30YLC,115

Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.95V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2435pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 106W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

package: SC-100, SOT-669

PBSS4560PA,115

Nexperia USA Inc.

TRANS NPN 60V 6A SOT1061

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 6A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 290mV @ 300mA, 6A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 150MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-UDFN
• Supplier Device Package: 3-HUSON (2x2)

package: 3-UDFN

PBSS5250T,215

Nexperia USA Inc.

TRANS PNP 50V 2A SOT23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 480mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

package: TO-236-3, SC-59, SOT-23-3

BC857BW,135

Nexperia USA Inc.

TRANS PNP 45V 0.1A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

package: SC-70, SOT-323

PDTC144WM,315

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW SOT883

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: -
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: DFN1006-3

package: SC-101, SOT-883

PUMD3,135

Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: -
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

package: 6-TSSOP, SC-88, SOT-363

PZU13B3,115

Nexperia USA Inc.

DIODE ZENER 13V 310MW SOD323F

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±2%
• Power - Max: 310mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

package: SC-90, SOD-323F

BZV85-C68,113

Nexperia USA Inc.

DIODE ZENER 68V 1.3W DO41

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 48V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

package: DO-204AL, DO-41, Axial

BZT52-C15J

Nexperia USA Inc.

DIODE ZENER 14.7V 350MW SOD123

• Voltage - Zener (Nom) (Vz): 14.7V
• Tolerance: ±6.1%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: SOD-123

BZV55-B47,115

Nexperia USA Inc.

DIODE ZENER 47V 500MW SOD80C

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 170 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 32.9V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80C

package: DO-213AC, MINI-MELF, SOD-80

NZH3V9B,115

Nexperia USA Inc.

DIODE ZENER 3.9V 500MW SOD123F

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

package: SOD-123F

PMEG3010AESBYL

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD993

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3.5ns
• Current - Reverse Leakage @ Vr: 255µA @ 20V
• Capacitance @ Vr, F: 86pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-XDFN
• Supplier Device Package: DSN1006-2
• Operating Temperature - Junction: 150°C (Max)

package: 2-XDFN

74HC573BQ,115

Nexperia USA Inc.

IC OCTAL D TRANSP LATCH 20DHVQFN

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 2 V ~ 6 V
• Independent Circuits: 1
• Delay Time - Propagation: 14ns
• Current - Output High, Low: 7.8mA, 7.8mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN Exposed Pad
• Supplier Device Package: 20-DHVQFN (4.5x 2.5)

package: 20-VFQFN Exposed Pad

74HCT02DB,118

Nexperia USA Inc.

IC GATE NOR 4CH 2-INP 14-SSOP

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SSOP
• Package / Case: 14-SSOP (0.209", 5.30mm Width)

package: 14-SSOP (0.209", 5.30mm Width)

74LVC1G58GS,132

Nexperia USA Inc.

IC GATE MULTI FUNCTION 6XSON

• Logic Type: Configurable Multiple Function
• Number of Circuits: 1
• Number of Inputs: 3
• Schmitt Trigger Input: Yes
• Output Type: Single-Ended
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON, SOT1202 (1x1)

package: 6-XFDFN

74HC244D,653

Nexperia USA Inc.

IC BUFF/DVR TRI-ST DUAL 20SOIC

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SO

package: 20-SOIC (0.295", 7.50mm Width)

74HC4053DB,118

Nexperia USA Inc.

IC MUX/DEMUX TRIPLE 2X1 16SSOP

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 3
• On-State Resistance (Max): 120 Ohm
• Channel-to-Channel Matching (ΔRon): 6 Ohm
• Voltage - Supply, Single (V+): 2 V ~ 10 V
• Voltage - Supply, Dual (V±): ±1.5 V ~ 5 V
• Switch Time (Ton, Toff) (Max): 31ns, 29ns
• -3db Bandwidth: 170MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -60dB @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 16-SSOP

package: 16-SSOP (0.209", 5.30mm Width)

74LV1T00GWH

Nexperia USA Inc.

IC GATE NAND 1CH 2-INP TSSOP5

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.1 V ~ 0.3 V
• Logic Level - High: 1.28 V ~ 4.6 V
• Max Propagation Delay @ V, Max CL: 4.8ns @ 5V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 5-TSSOP
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

package: 5-TSSOP, SC-70-5, SOT-353

BZX585-C47-QX

Nexperia USA Inc.

BZX585-C47-Q/SOD523/SC-79

• Voltage - Zener (Nom) (Vz): 47 V
• Tolerance: ±5%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 170 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

package: -

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BZT52H-A39X

Nexperia USA Inc.

BZT52H-A39/SOD123F/SOD2

• Voltage - Zener (Nom) (Vz): 39 V
• Tolerance: ±1%
• Power - Max: 375 mW
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

package: -

Request a Quote

BCP51-10-QF

Nexperia USA Inc.

BCP51-10-Q/SOT223/SC-73

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 650 mW
• Frequency - Transition: 145MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

package: -

HPZR-C10X

Nexperia USA Inc.

HPZR-C10/SOD123W/SOD2

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±5%
• Power - Max: 962 mW
• Impedance (Max) (Zzt): 18.02 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 8.5 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W

package: -

PMZ600UNEZ

Nexperia USA Inc.

MOSFET N-CH 20V 600MA DFN1006-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
• Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-883
• Package / Case: SC-101, SOT-883

package: -

BZX884S-C27-QYL

Nexperia USA Inc.

BZX884S-C27-Q/SOD882BD/XSON2

• Voltage - Zener (Nom) (Vz): 27 V
• Tolerance: ±1.85%
• Power - Max: 365 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006BD-2

package: -

PMPB10XNX

Nexperia USA Inc.

MOSFET N-CH 30V 9.5A DFN2020MD-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1761 pF @ 15 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 13mOhm @ 9.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN2020MD-6
• Package / Case: 6-UDFN Exposed Pad

package: -