Nexperia USA Inc. Producten

BUK954R8-60E,127

Nexperia USA Inc.

MOSFET N-CH 60V 100A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 9710pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 234W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

PMCM4402UPEZ

Nexperia USA Inc.

MOSFET P-CH 20V 4.2A 4WLCSP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 400mW
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-WLCSP (2x2)
• Package / Case: 4-XFBGA, WLCSP

package: 4-XFBGA, WLCSP

BUK9M53-60EX

Nexperia USA Inc.

MOSFET N-CH 60V 17A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 36W (Tc)
• Rds On (Max) @ Id, Vgs: 46 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

package: SOT-1210, 8-LFPAK33 (5-Lead)

BC847,215

Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

package: TO-236-3, SC-59, SOT-23-3

PDTA123JMB,315

Nexperia USA Inc.

TRANS PREBIAS PNP 250MW 3DFN

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 180MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 3-XFDFN
• Supplier Device Package: 3-DFN1006B (0.6x1)

package: 3-XFDFN

PDTA113ZMB,315

Nexperia USA Inc.

TRANS PREBIAS PNP 250MW 3DFN

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 180MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 3-XFDFN
• Supplier Device Package: 3-DFN1006B (0.6x1)

package: 3-XFDFN

PMP5501G,135

Nexperia USA Inc.

TRANS 2PNP 45V 0.1A 5TSSOP

• Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 175MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: 5-TSSOP

package: 5-TSSOP, SC-70-5, SOT-353

PMP4501Y,115

Nexperia USA Inc.

TRANS 2NPN 45V 0.1A 6TSSOP

• Transistor Type: 2 NPN (Dual) Matched Pair
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP, SC-88

package: 6-TSSOP, SC-88, SOT-363

PZU18B3,115

Nexperia USA Inc.

DIODE ZENER 18V 310MW SOD323F

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±2%
• Power - Max: 310mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

package: SC-90, SOD-323F

PDZ18BF

Nexperia USA Inc.

PDZ18B/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

PZU15BA,115

Nexperia USA Inc.

DIODE ZENER 15V 320MW SOD323

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 320mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

package: SC-76, SOD-323

BZX79-B39,133

Nexperia USA Inc.

DIODE ZENER 39V 400MW ALF2

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±2%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 130 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 27.3V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2

package: DO-204AH, DO-35, Axial

NZX3V6A,133

Nexperia USA Inc.

DIODE ZENER 3.6V 500MW ALF2

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2

package: DO-204AH, DO-35, Axial

1N4531,133

Nexperia USA Inc.

DIODE GEN PURP 75V 200MA DO34

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 25nA @ 20V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34
• Operating Temperature - Junction: 200°C (Max)

package: DO-204AG, DO-34, Axial

BAT854CW,135

Nexperia USA Inc.

DIODE ARRAY SCHOTTKY 40V SOT323

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500nA @ 25V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

package: SC-70, SOT-323

BAS21VD,135

Nexperia USA Inc.

DIODE ARRAY GP 200V 200MA 6TSOP

• Diode Configuration: 3 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: 6-TSOP

package: SC-74, SOT-457

74LVC2G32GD,125

Nexperia USA Inc.

IC GATE OR 2CH 2-INP 8-XSON

• Logic Type: OR Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-XSON, SOT996-2 (2x3)
• Package / Case: 8-XFDFN

package: 8-XFDFN

74LVC1G11GW-Q100H

Nexperia USA Inc.

IC GATE AND 1CH 3-INP 6-TSSOP

• Logic Type: AND Gate
• Number of Circuits: 1
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 3.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSSOP
• Package / Case: 6-TSSOP, SC-88, SOT-363

package: 6-TSSOP, SC-88, SOT-363

74LVT04PW,118

Nexperia USA Inc.

IC 3.3V HEX INVERTER 14TSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Current - Quiescent (Max): -
• Current - Output High, Low: 20mA, 32mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 2.6ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

package: 14-TSSOP (0.173", 4.40mm Width)

HEF40244BT,653

Nexperia USA Inc.

IC BUFF/DVR TRI-ST DUAL 20SOIC

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 62mA, 45mA
• Voltage - Supply: 3 V ~ 15 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SO

package: 20-SOIC (0.295", 7.50mm Width)

74LVC2G53DC,125

Nexperia USA Inc.

IC MUX/DEMUX 2X1 8VSSOP

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 1
• On-State Resistance (Max): 10 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 3.8ns, 3.8ns
• -3db Bandwidth: 300MHz
• Charge Injection: 7.5pC
• Channel Capacitance (CS(off), CD(off)): 6pF
• Current - Leakage (IS(off)) (Max): 5µA
• Crosstalk: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: 8-VSSOP, US8

package: 8-VFSOP (0.091", 2.30mm Width)

BCX52TF

Nexperia USA Inc.

TRANS PNP 60V 1A SOT89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 500 mW
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

package: -

BZX84W-B30F

Nexperia USA Inc.

DIODE ZENER 30V 275MW SOT323

• Voltage - Zener (Nom) (Vz): 30 V
• Tolerance: ±2%
• Power - Max: 275 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 21 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

package: -

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PZU3-6BA-QX

Nexperia USA Inc.

PZU3.6BA-Q/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 3.6 V
• Tolerance: ±5%
• Power - Max: 320 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

package: -

PMBT5550-QVL

Nexperia USA Inc.

PMBT5550-Q/SOT23/TO-236AB

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 300 mA
• Voltage - Collector Emitter Breakdown (Max): 140 V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 250 mW
• Frequency - Transition: 300MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

package: -

PMEG4010CEA-QX

Nexperia USA Inc.

PMEG4010CEA-Q/SOD323/SOD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8 ns
• Current - Reverse Leakage @ Vr: 8 µA @ 40 V
• Capacitance @ Vr, F: 24pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: 150°C

package: -

BUK7M3R3-40HX

Nexperia USA Inc.

MOSFET N-CH 40V 80A LFPAK33

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3037 pF @ 25 V
• Vgs (Max): +20V, -10V
• FET Feature: -
• Power Dissipation (Max): 101W (Ta)
• Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

package: -

PSMN071-100NSEX

Nexperia USA Inc.

PSMN071-100NSE/SOT1220-2/DFN20

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 31W (Ta)
• Rds On (Max) @ Id, Vgs: 82.3mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN2020M-6
• Package / Case: 6-UDFN Exposed Pad

package: -

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