Microsemi Corporation Producten

APT50GT120JRDQ2

Microsemi Corporation

IGBT 1200V 72A 379W SOT227

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 72A
• Power - Max: 379W
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector Cutoff (Max): 400µA
• Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Supplier Device Package: ISOTOP?

package: ISOTOP

APT32F120J

Microsemi Corporation

MOSFET N-CH 1200V 33A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 33A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 320 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP?
• Package / Case: SOT-227-4, miniBLOC

package: SOT-227-4, miniBLOC

JAN2N3715

Microsemi Corporation

TRANS NPN 60V 10A TO-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
• Current - Collector Cutoff (Max): 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
• Power - Max: 5W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3
• Supplier Device Package: TO-3 (TO-204AA)

package: TO-3

JANTX2N5664

Microsemi Corporation

TRANS NPN 200V 5A TO66

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 200V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 5A, 1A
• Current - Collector Cutoff (Max): 200nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
• Power - Max: 2.5W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-213AA, TO-66-2
• Supplier Device Package: TO-66 (TO-213AA)

package: TO-213AA, TO-66-2

JANTX1N4135-1

Microsemi Corporation

DIODE ZENER 100V 500MW DO35

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1600 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

package: DO-204AH, DO-35, Axial

3EZ4.3D5/TR8

Microsemi Corporation

DIODE ZENER 4.3V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 4.5 Ohms
• Current - Reverse Leakage @ Vr: 30µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

SMBG5945B/TR13

Microsemi Corporation

DIODE ZENER 68V 2W SMBG

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 51.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

package: DO-215AA, SMB Gull Wing

1N2815A

Microsemi Corporation

DIODE ZENER 17V 50W TO204AD

• Voltage - Zener (Nom) (Vz): 17V
• Tolerance: ±10%
• Power - Max: 50W
• Impedance (Max) (Zzt): 1.8 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-204AD
• Supplier Device Package: TO-204AD (TO-3)

package: TO-204AD

JAN1N4476CUS

Microsemi Corporation

DIODE ZENER 30V 1.5W D-5A

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 24V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A

package: SQ-MELF, A

1N5931P/TR12

Microsemi Corporation

DIODE ZENER 18V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

1N5926BPE3/TR12

Microsemi Corporation

DIODE ZENER 11V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 5.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

SMBJ5945AE3/TR13

Microsemi Corporation

DIODE ZENER 68V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 51.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

package: DO-214AA, SMB

JANTX1N6081

Microsemi Corporation

DIODE GEN PURP 150V 2A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A-PAK
• Operating Temperature - Junction: -65°C ~ 155°C

package: A, Axial

JAN1N6677UR-1

Microsemi Corporation

DIODE SCHOTTKY 40V 200MA DO213AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 40V
• Capacitance @ Vr, F: 50pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA
• Operating Temperature - Junction: -65°C ~ 175°C

package: DO-213AA

HSM350JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 50V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB
• Operating Temperature - Junction: -55°C ~ 175°C

package: DO-214AB, SMC

1N5809US

Microsemi Corporation

DIODE GEN PURP 100V 3A B-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 60pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

package: SQ-MELF, B

MSCD70-16

Microsemi Corporation

DIODE MODULE 1.6KV 70A D1

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.48V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 1600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: D1
• Supplier Device Package: D1

package: D1

OA4SMM5

Microsemi Corporation

OPTICAL DRIVER

• Type: -
• Data Rate: -
• Number of Channels: -
• Voltage - Supply: -
• Current - Supply: -
• Current - Modulation: -
• Current - Bias: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

package: -

M2GL090TS-1FG484M

Microsemi Corporation

IC FPGA 267 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 86184
• Total RAM Bits: 2648064
• Number of I/O: 267
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

package: 484-BGA

MP6KE110CA

Microsemi Corporation

TVS DIODE 94VWM 152VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 94V
• Voltage - Breakdown (Min): 105V
• Voltage - Clamping (Max) @ Ipp: 152V
• Current - Peak Pulse (10/1000µs): 3.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

package: T-18, Axial

MXPLAD36KP64A

Microsemi Corporation

TVS DIODE 103VC 350A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 350A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

MAPLAD36KP33A

Microsemi Corporation

TVS DIODE 53.3VC 676A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 676A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

MXSMBG5.0A

Microsemi Corporation

TVS DIODE 5VWM 9.2VC DO215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 6.4V
• Voltage - Clamping (Max) @ Ipp: 9.2V
• Current - Peak Pulse (10/1000µs): 65.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

package: DO-215AA, SMB Gull Wing

MXLSMLJ33AE3

Microsemi Corporation

TVS DIODE 33VWM 53.3VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 56.2A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

package: DO-214AB, SMC

MXLSMCG40CAE3

Microsemi Corporation

TVS DIODE 40VWM 64.5VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 64.5V
• Current - Peak Pulse (10/1000µs): 23.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

package: DO-215AB, SMC Gull Wing

MAPLAD6.5KP51A

Microsemi Corporation

TVS DIODE 51VWM 82.4VC MINIPLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 78.8A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: Mini-PLAD

package: Nonstandard SMD

SMCJ150CAE3/TR13

Microsemi Corporation

TVS DIODE 150VWM 243VC SMCJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 6.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

package: DO-214AB, SMC

MSMCJ40CA

Microsemi Corporation

TVS DIODE 40VWM 64.5VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 64.5V
• Current - Peak Pulse (10/1000µs): 23.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

package: DO-214AB, SMC