Pagina 9 - Microchip Technology Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Microchip Technology Producten - Transistors - FET's, MOSFET's - Single

Archief 441
Pagina  9/16
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT10026JLL
Microchip Technology

MOSFET N-CH 1000V 30A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
package: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
30A (Tc)
-
5V @ 5mA
267 nC @ 10 V
7114 pF @ 25 V
-
-
-
260mOhm @ 15A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT10M19SVFRG
Microchip Technology

MOSFET N-CH 100V 75A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
75A (Tc)
-
4V @ 1mA
300 nC @ 10 V
6120 pF @ 25 V
-
-
-
19mOhm @ 37.5A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT10025JVR
Microchip Technology

MOSFET N-CH 1000V 34A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
package: -
Voorraad27
MOSFET (Metal Oxide)
1000 V
34A (Tc)
-
4V @ 5mA
990 nC @ 10 V
18000 pF @ 25 V
-
-
-
250mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT6025BVRG
Microchip Technology

MOSFET N-CH 600V 25A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
package: -
Voorraad99
MOSFET (Metal Oxide)
600 V
25A (Tc)
-
4V @ 1mA
275 nC @ 10 V
5160 pF @ 25 V
-
-
-
250mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT6029SLLG
Microchip Technology

MOSFET N-CH 600V 21A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
21A (Tc)
-
5V @ 1mA
65 nC @ 10 V
2615 pF @ 25 V
-
-
-
290mOhm @ 10.5A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6025BLLG
Microchip Technology

MOSFET N-CH 600V 24A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
24A (Tc)
-
5V @ 1mA
65 nC @ 10 V
2910 pF @ 25 V
-
-
-
250mOhm @ 12A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT10050LVRG
Microchip Technology

MOSFET N-CH 1000V 21A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
package: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
21A (Tc)
-
4V @ 2.5mA
500 nC @ 10 V
7900 pF @ 25 V
-
-
-
500mOhm @ 500mA, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT9M100S
Microchip Technology

MOSFET N-CH 1000V 9A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 335W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
package: -
Voorraad258
MOSFET (Metal Oxide)
1000 V
9A (Tc)
10V
5V @ 1mA
80 nC @ 10 V
2605 pF @ 25 V
±30V
-
335W (Tc)
1.4Ohm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MRH25N12U3
Microchip Technology

RH MOSFET _ U3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U3 (SMD-0.5)
  • Package / Case: 3-SMD, No Lead
package: -
Request a Quote
MOSFET (Metal Oxide)
250 V
12.4A (Tc)
12V
4V @ 1mA
50 nC @ 12 V
1980 pF @ 25 V
±20V
-
75W (Tc)
210mOhm @ 7.5A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
U3 (SMD-0.5)
3-SMD, No Lead
APT20M16LFLLG
Microchip Technology

MOSFET N-CH 200V 100A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
package: -
Voorraad75
MOSFET (Metal Oxide)
200 V
100A (Tc)
-
5V @ 2.5mA
140 nC @ 10 V
7220 pF @ 25 V
-
-
-
16mOhm @ 50A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT12080JVFR
Microchip Technology

MOSFET N-CH 1200V 15A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 7.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
package: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
15A (Tc)
-
4V @ 2.5mA
485 nC @ 10 V
7800 pF @ 25 V
-
-
-
800mOhm @ 7.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
MRH20N45T1SR
Microchip Technology

RH MOSFET 200V TO-254AA

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT12080LVRG
Microchip Technology

MOSFET N-CH 1200V 16A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (L)
  • Package / Case: TO-264-3, TO-264AA
package: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
16A (Tc)
10V
4V @ 2.5mA
485 nC @ 10 V
7800 pF @ 25 V
±30V
-
520W (Tc)
800mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (L)
TO-264-3, TO-264AA
APT4014BVFRG
Microchip Technology

MOSFET N-CH 400V 28A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
package: -
Request a Quote
MOSFET (Metal Oxide)
400 V
28A (Tc)
-
4V @ 1mA
160 nC @ 10 V
3600 pF @ 25 V
-
-
-
140mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT5018SFLLG
Microchip Technology

MOSFET N-CH 500V 27A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
27A (Tc)
-
5V @ 1mA
58 nC @ 10 V
2596 pF @ 25 V
-
-
-
180mOhm @ 13.5A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT5010B2VRG
Microchip Technology

MOSFET N-CH 500V 47A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
47A (Tc)
-
4V @ 2.5mA
470 nC @ 10 V
8900 pF @ 25 V
-
-
-
100mOhm @ 500mA, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT30M36B2FLLG
Microchip Technology

MOSFET N-CH 300V 84A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6480 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 42A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
package: -
Request a Quote
MOSFET (Metal Oxide)
300 V
84A (Tc)
-
5V @ 2.5mA
115 nC @ 10 V
6480 pF @ 25 V
-
-
-
36mOhm @ 42A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT6038BFLLG
Microchip Technology

MOSFET N-CH 600V 17A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
17A (Tc)
-
5V @ 1mA
43 nC @ 10 V
1850 pF @ 25 V
-
-
-
380mOhm @ 8.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT20M34BLLG
Microchip Technology

MOSFET N-CH 200V 74A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
package: -
Request a Quote
MOSFET (Metal Oxide)
200 V
74A (Tc)
-
5V @ 1mA
60 nC @ 10 V
3660 pF @ 25 V
-
-
-
34mOhm @ 37A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT40M70JVR
Microchip Technology

MOSFET N-CH 400V 53A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 495 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8890 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
package: -
Voorraad138
MOSFET (Metal Oxide)
400 V
53A (Tc)
10V
4V @ 2.5mA
495 nC @ 10 V
8890 pF @ 25 V
±30V
-
450W (Tc)
70mOhm @ 26.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
APT5017BVFRG
Microchip Technology

MOSFET N-CH 500V 30A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
30A (Tc)
-
4V @ 1mA
300 nC @ 10 V
5280 pF @ 25 V
-
-
-
170mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT12057JFLL
Microchip Technology

MOSFET N-CH 1200V 19A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 570mOhm @ 9.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
package: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
19A (Tc)
-
5V @ 2.5mA
185 nC @ 10 V
5155 pF @ 25 V
-
-
-
570mOhm @ 9.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5024BFLLG
Microchip Technology

MOSFET N-CH 500V 22A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
22A (Tc)
-
5V @ 1mA
43 nC @ 10 V
1900 pF @ 25 V
-
-
-
240mOhm @ 11A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
MRH20N56U2SR
Microchip Technology

RH MOSFET 200V SMD 2.0

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
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-
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-
APT10M19SVRG
Microchip Technology

MOSFET N-CH 100V 75A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
package: -
Voorraad39
MOSFET (Metal Oxide)
100 V
75A (Tc)
-
4V @ 1mA
300 nC @ 10 V
6120 pF @ 25 V
-
-
-
19mOhm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
JANSR2N7589U3
Microchip Technology

RH MOSFET 150V U3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U3 (SMD-0.5)
  • Package / Case: 3-SMD, No Lead
package: -
Request a Quote
MOSFET (Metal Oxide)
150 V
19A (Tc)
12V
4V @ 1mA
50 nC @ 12 V
2140 pF @ 25 V
±20V
-
75W (Tc)
88mOhm @ 12A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
U3 (SMD-0.5)
3-SMD, No Lead
JANSR2N7587U3
Microchip Technology

RH MOSFET 100V U3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.48V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 19A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U3 (SMD-0.5)
  • Package / Case: 3-SMD, No Lead
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
22A (Tc)
12V
4.48V @ 1mA
34 nC @ 12 V
2165 pF @ 25 V
±20V
-
75W (Tc)
38mOhm @ 19A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
U3 (SMD-0.5)
3-SMD, No Lead
JANSR2N7586T1
Microchip Technology

RH MOSFET 250V TO-254AA

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
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