Pagina 13 - Microchip Technology Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Microchip Technology Producten - Transistors - FET's, MOSFET's - Single

Archief 441
Pagina  13/16
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot VN2460N8-G
Microchip Technology

MOSFET N-CH 600V 0.2A SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
package: TO-243AA
Voorraad49.536
MOSFET (Metal Oxide)
600V
200mA (Tj)
4.5V, 10V
4V @ 2mA
-
150pF @ 25V
±20V
-
1.6W (Ta)
20 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
hot TN0104N8-G
Microchip Technology

MOSFET N-CH 40V 0.63A TO243AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 630mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
package: TO-243AA
Voorraad42.840
MOSFET (Metal Oxide)
40V
630mA (Tj)
3V, 10V
1.6V @ 500µA
-
70pF @ 20V
±20V
-
1.6W (Tc)
2 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
2N7008-G
Microchip Technology

MOSFET N-CH 60V 0.23A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad7.792
MOSFET (Metal Oxide)
60V
230mA (Tj)
5V, 10V
2.5V @ 250µA
-
50pF @ 25V
±30V
-
1W (Tc)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
DN2470K4-G
Microchip Technology

MOSFET N-CH 700V 0.17A 3DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 42 Ohm @ 100mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad7.808
MOSFET (Metal Oxide)
700V
170mA (Tj)
0V
-
-
540pF @ 25V
±20V
Depletion Mode
2.5W (Ta)
42 Ohm @ 100mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot TP2510N8-G
Microchip Technology

MOSFET P-CH 100V 0.48A SOT89-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
package: TO-243AA
Voorraad82.056
MOSFET (Metal Oxide)
100V
480mA (Tj)
10V
2.4V @ 1mA
-
125pF @ 25V
±20V
-
1.6W (Ta)
3.5 Ohm @ 750mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
DN1509N8-G
Microchip Technology

MOSFET N-CH 90V 360MA SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
package: TO-243AA
Voorraad6.512
MOSFET (Metal Oxide)
90V
360mA (Tj)
0V
-
-
150pF @ 25V
±20V
Depletion Mode
1.6W (Ta)
6 Ohm @ 200mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
MCP87050T-U/MF
Microchip Technology

MOSFET N-CH 25V 8PDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V
  • Vgs (Max): +10V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5x6)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad6.960
MOSFET (Metal Oxide)
25V
100A (Tc)
4.5V, 10V
1.6V @ 250µA
15nC @ 4.5V
1040pF @ 12.5V
+10V, -8V
-
2.2W (Ta)
5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PDFN (5x6)
8-PowerTDFN
hot VP2110K1-G
Microchip Technology

MOSFET P-CH 100V 0.12A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad36.840
MOSFET (Metal Oxide)
100V
120mA (Tj)
5V, 10V
3.5V @ 1mA
-
60pF @ 25V
±20V
-
360mW (Ta)
12 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
TP2540N3-G
Microchip Technology

MOSFET P-CH 400V 0.086A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad15.528
MOSFET (Metal Oxide)
400V
86mA (Tj)
4.5V, 10V
2.4V @ 1mA
-
125pF @ 25V
±20V
-
740mW (Ta)
25 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VN2210N3-G
Microchip Technology

MOSFET N-CH 100V 1.2A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad6.984
MOSFET (Metal Oxide)
100V
1.2A (Tj)
5V, 10V
2.4V @ 10mA
-
500pF @ 25V
±20V
-
740mW (Tc)
350 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VP0550N3-G
Microchip Technology

MOSFET P-CH 500V 0.054A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 54mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 Ohm @ 10mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad13.164
MOSFET (Metal Oxide)
500V
54mA (Tj)
5V, 10V
4.5V @ 1mA
-
70pF @ 25V
±20V
-
1W (Tc)
125 Ohm @ 10mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TP2635N3-G
Microchip Technology

MOSFET P-CH 350V 0.18A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad22.704
MOSFET (Metal Oxide)
350V
180mA (Tj)
2.5V, 10V
2V @ 1mA
-
300pF @ 25V
±20V
-
1W (Ta)
15 Ohm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TP0620N3-G
Microchip Technology

MOSFET P-CH 200V 0.175A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad21.732
MOSFET (Metal Oxide)
200V
175mA (Tj)
5V, 10V
2.4V @ 1mA
-
150pF @ 25V
±20V
-
1W (Ta)
12 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
DN2535N5-G
Microchip Technology

MOSFET N-CH 350V 500MA TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad6.420
MOSFET (Metal Oxide)
350V
500mA (Tj)
0V
-
-
300pF @ 25V
±20V
Depletion Mode
15W (Tc)
25 Ohm @ 120mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot TN2540N3-G
Microchip Technology

MOSFET N-CH 400V 0.175A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad18.228
MOSFET (Metal Oxide)
400V
175mA (Tj)
4.5V, 10V
2V @ 1mA
-
125pF @ 25V
±20V
-
1W (Ta)
12 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
VN2450N3-G
Microchip Technology

MOSFET N-CH 500V 0.2A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 Ohm @ 400mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad6.984
MOSFET (Metal Oxide)
500V
200mA (Tj)
4.5V, 10V
4V @ 1mA
-
150pF @ 25V
±20V
-
1W (Ta)
13 Ohm @ 400mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TN2640N3-G
Microchip Technology

MOSFET N-CH 400V 0.22A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad20.292
MOSFET (Metal Oxide)
400V
220mA (Tj)
4.5V, 10V
2V @ 2mA
-
225pF @ 25V
±20V
-
740mW (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VP3203N3-G
Microchip Technology

MOSFET P-CH 30V 650MA TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad10.560
MOSFET (Metal Oxide)
30V
650mA (Tj)
4.5V, 10V
3.5V @ 10mA
-
300pF @ 25V
±20V
-
740mW (Ta)
600 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot LP0701N3-G
Microchip Technology

MOSFET P-CH 16.5V 0.5A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16.5V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 300mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad5.888
MOSFET (Metal Oxide)
16.5V
500mA (Tj)
2V, 5V
1V @ 1mA
-
250pF @ 15V
±10V
-
1W (Tc)
1.5 Ohm @ 300mA, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
VN3205N3-G
Microchip Technology

MOSFET N-CH 50V 1.2A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad8.436
MOSFET (Metal Oxide)
50V
1.2A (Tj)
4.5V, 10V
2.4V @ 10mA
-
300pF @ 25V
±20V
-
1W (Tc)
300 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot TP0604N3-G
Microchip Technology

MOSFET P-CH 40V 430MA TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 430mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad6.336
MOSFET (Metal Oxide)
40V
430mA (Tj)
5V, 10V
2.4V @ 1mA
-
150pF @ 20V
±20V
-
740mW (Ta)
2 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
VN0808L-G
Microchip Technology

MOSFET N-CH 80V 300MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad15.660
MOSFET (Metal Oxide)
80V
300mA (Tj)
10V
2V @ 1mA
-
50pF @ 25V
±30V
-
1W (Tc)
4 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot TP0606N3-G
Microchip Technology

MOSFET P-CH 60V 320MA TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad24.360
MOSFET (Metal Oxide)
60V
320mA (Tj)
5V, 10V
2.4V @ 1mA
-
150pF @ 25V
±20V
-
1W (Tc)
3.5 Ohm @ 750mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot TN0106N3-G
Microchip Technology

MOSFET N-CH 60V 350MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad9.108
MOSFET (Metal Oxide)
60V
350mA (Tj)
4.5V, 10V
2V @ 500µA
-
60pF @ 25V
±20V
-
1W (Tc)
3 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
VP0106N3-G
Microchip Technology

MOSFET P-CH 60V 0.25A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad20.628
MOSFET (Metal Oxide)
60V
250mA (Tj)
5V, 10V
3.5V @ 1mA
-
60pF @ 25V
±20V
-
1W (Tc)
8 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TN2106N3-G
Microchip Technology

MOSFET N-CH 60V 300MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad18.828
MOSFET (Metal Oxide)
60V
300mA (Tj)
4.5V, 10V
2V @ 1mA
-
50pF @ 25V
±20V
-
740mW (Tc)
2.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
2N7000-G
Microchip Technology

MOSFET N-CH 60V 0.2A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad16.404
MOSFET (Metal Oxide)
60V
200mA (Tj)
4.5V, 10V
3V @ 1mA
-
60pF @ 25V
±30V
-
1W (Tc)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
MCP87018T-U/MF
Microchip Technology

MOSFET N-CH 25V 100A 8PDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2925pF @ 12.5V
  • Vgs (Max): +10V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5x6)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad6.992
MOSFET (Metal Oxide)
25V
100A (Tc)
3.3V, 10V
1.6V @ 250µA
37nC @ 4.5V
2925pF @ 12.5V
+10V, -8V
-
2.2W (Ta)
1.9 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PDFN (5x6)
8-PowerTDFN