Microchip Technology Producten - Transistors - FET's, MOSFET's - Arrays | Heisener Electronics
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Microchip Technology Producten - Transistors - FET's, MOSFET's - Arrays

Archief 176
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MSCSM170TLM45C3AG
Microchip Technology

SIC 4N-CH 1700V 64A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
  • Power - Max: 319W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
package: -
Request a Quote
-
1700V (1.7kV)
64A (Tc)
45mOhm @ 30A, 20V
3.2V @ 2.5mA
178nC @ 20V
3300pF @ 1000V
319W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM120HM063AG
Microchip Technology

SIC 4N-CH 1200V 333A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
  • Power - Max: 873W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
333A (Tc)
7.8mOhm @ 80A, 20V
2.8V @ 12mA
928nC @ 20V
12000pF @ 1000V
873W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120AM08T3AG
Microchip Technology

SIC 2N-CH 1200V 337A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
  • Power - Max: 1.409kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
337A (Tc)
7.8mOhm @ 160A, 20V
2.8V @ 12mA
928nC @ 20V
12100pF @ 1000V
1.409kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120TAM11CTPAG
Microchip Technology

SIC 6N-CH 1200V 251A SP6-P

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
  • Power - Max: 1.042kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6-P
package: -
Request a Quote
-
1200V (1.2kV)
251A (Tc)
10.4mOhm @ 120A, 20V
2.8V @ 3mA
696nC @ 20V
9060pF @ 1000V
1.042kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6-P
MSCSM120HM50T3AG
Microchip Technology

SIC 4N-CH 1200V 55A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
  • Power - Max: 245W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
55A (Tc)
50mOhm @ 40A, 20V
2.7V @ 2mA
137nC @ 20V
1990pF @ 1000V
245W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70XM75CTYZBNMG
Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc), 52A (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA, 2.7V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V, 99nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 700V, 2010pF @ 700V
  • Power - Max: 90W (Tc), 141W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
700V
31A (Tc), 52A (Tc)
75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V
2.4V @ 1mA, 2.7V @ 2mA
56nC @ 20V, 99nC @ 20V
1175pF @ 700V, 2010pF @ 700V
90W (Tc), 141W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120HM083AG
Microchip Technology

SIC 4N-CH 1200V 251A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
  • Power - Max: 1.042kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
251A (Tc)
10.4mOhm @ 120A, 20V
2.8V @ 9mA
696nC @ 20V
9000pF @ 1000V
1.042kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120DUM31CTBL1NG
Microchip Technology

SIC 2N-CH 1200V 79A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
79A
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
310W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70HM05AG
Microchip Technology

SIC 4N-CH 700V 349A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
  • Power - Max: 966W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
700V
349A (Tc)
6.4mOhm @ 120A, 20V
2.4V @ 12mA
645nC @ 20V
13500pF @ 700V
966W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM170AM15CT3AG
Microchip Technology

SIC 2N-CH 1700V 181A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
  • Power - Max: 862W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1700V (1.7kV)
181A (Tc)
15mOhm @ 90A, 20V
3.2V @ 7.5mA
534nC @ 20V
9900pF @ 1000V
862W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120AM08CT3AG
Microchip Technology

SIC 2N-CH 1200V 337A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
  • Power - Max: 1.409kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
package: -
Request a Quote
-
1200V (1.2kV)
337A (Tc)
7.8mOhm @ 160A, 20V
2.8V @ 4mA
928nC @ 20V
12.08pF @ 1000V
1.409kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM120HM31CT3AG
Microchip Technology

SIC 4N-CH 1200V 89A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
package: -
Request a Quote
-
1200V (1.2kV)
89A (Tc)
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
395W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM70VR1M19C1AG
Microchip Technology

SIC 2N-CH 700V 124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70AM025CT6LIAG
Microchip Technology

SIC 2N-CH 700V 689A SP6C LI

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 24mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
  • Power - Max: 1882W (Tc)
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C LI
package: -
Request a Quote
-
700V
689A (Tc)
3.2mOhm @ 240A, 20V
2.4V @ 24mA (Typ)
1290nC @ 20V
27000pF @ 700V
1882W (Tc)
-
Chassis Mount
Module
SP6C LI
MSCSM120HM16T3AG
Microchip Technology

SIC 4N-CH 1200V 173A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 745W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
173A (Tc)
16mOhm @ 80A, 20V
2.8V @ 6mA
464nC @ 20V
6040pF @ 1000V
745W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120XM50CTYZBNMG
Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V
  • Power - Max: 196W (Tc), 315W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
49A (Tc), 80A (Tc)
50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V
2.7V @ 2mA, 2.8V @ 3mA
137nC @ 20V, 232nC @ 20V
1990pF @ 1000V, 3020pF @ 1000V
196W (Tc), 315W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM170DUM039AG
Microchip Technology

SIC 2N-CH 1700V 523A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
  • Power - Max: 2400W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Voorraad9
-
1700V (1.7kV)
523A (Tc)
5mOhm @ 270A, 20V
3.3V @ 22.5mA
1602nC @ 20V
29700pF @ 1000V
2400W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCC60VRM45TAPG
Microchip Technology

MOSFET 600V 40A SP6-P

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6-P
package: -
Request a Quote
-
600V
40A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
SP6-P
MSCSM120AM31CT1AG
Microchip Technology

SIC 2N-CH 1200V 89A SP1F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP1F
package: -
Voorraad21
-
1200V (1.2kV)
89A (Tc)
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
395W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP1F
MSCSM170AM058CT6AG
Microchip Technology

SIC 2N-CH 1700V 353A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
  • Power - Max: 1.642kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Voorraad3
-
1700V (1.7kV)
353A (Tc)
7.5mOhm @ 180A, 20V
3.3V @ 15mA
1068nC @ 20V
19800pF @ 1000V
1.642kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM170DUM058AG
Microchip Technology

SIC 2N-CH 1700V 353A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
  • Power - Max: 1642W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Voorraad6
-
1700V (1.7kV)
353A (Tc)
7.5mOhm @ 180A, 20V
3.3V @ 15mA
1068nC @ 20V
19800pF @ 1000V
1642W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM170HM12CAG
Microchip Technology

SIC 4N-CH 1700V 179A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
  • Power - Max: 843W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Voorraad39
-
1700V (1.7kV)
179A (Tc)
15mOhm @ 90A, 20V
3.2V @ 7.5mA
534nC @ 20V
9900pF @ 1000V
843W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120AM027CT6AG
Microchip Technology

SIC 2N-CH 1200V 733A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
  • Power - Max: 2.97kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
package: -
Request a Quote
-
1200V (1.2kV)
733A (Tc)
3.5mOhm @ 360A, 20V
2.8V @ 9mA
2088nC @ 20V
27000pF @1000V
2.97kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
MSCSM170AM039CD3AG
Microchip Technology

SIC 2N-CH 1700V 523A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
  • Power - Max: 2.4kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1700V (1.7kV)
523A (Tc)
5mOhm @ 270A, 20V
3.3V @ 22.5mA
1602nC @ 20V
29700pF @ 1000V
2.4kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120DDUM31TBL2NG
Microchip Technology

SIC 4N-CH 1200V 79A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
79A
31mOhm @ 40A, 20V
2.8V @ 3mA
232nC @ 20V
3020pF @ 1000V
310W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70AM025CT6AG
Microchip Technology

SIC 700V 538A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
package: -
Request a Quote
-
700V
538A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
SP6C
MSCSM70XM45CTYZBNMG
Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc), 110A (Tc)
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 99nC @ 20V, 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 700V, 4500pF @ 700V
  • Power - Max: 141W (Tc), 292W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
700V
52A (Tc), 110A (Tc)
44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V
2.7V @ 2mA, 2.4V @ 4mA
99nC @ 20V, 215nC @ 20V
2010pF @ 700V, 4500pF @ 700V
141W (Tc), 292W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCM20XM16F4G
Microchip Technology

MOSFET 200V 77A SP4

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP4
package: -
Voorraad18
-
200V
77A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
SP4