IXYS Producten

IXSX35N120BD1

IXYS

IGBT 1200V 70A 300W PLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
• Power - Max: 300W
• Switching Energy: 5mJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 36ns/160ns
• Test Condition: 960V, 35A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 40ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

package: TO-247-3

IXDH20N120

IXYS

IGBT 1200V 38A 200W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 38A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
• Power - Max: 200W
• Switching Energy: 3.1mJ (on), 2.4mJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 20A, 82 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

package: TO-3P-3 Full Pack

IXA12IF1200PB

IXYS

IGBT 1200V 20A 85W TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
• Power - Max: 85W
• Switching Energy: 1.1mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 10A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 350ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

package: TO-220-3

MWI225-17E9

IXYS

MOD IGBT SIXPACK E+

• IGBT Type: NPT
• Configuration: Three Phase
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 335A
• Power - Max: 1400W
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 225A
• Current - Collector Cutoff (Max): 600µA
• Input Capacitance (Cies) @ Vce: 22nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E+
• Supplier Device Package: E+

package: E+

IXTA182N055T

IXYS

MOSFET N-CH 55V 182A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFK48N50Q

IXYS

MOSFET N-CH 500V 48A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

package: TO-264-3, TO-264AA

IXFK48N50

IXYS

MOSFET N-CH 500V 48A TO-264AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

package: TO-264-3, TO-264AA

IXTH140P10T

IXYS

MOSFET P-CH 100V 140A TO-247

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 31400pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 568W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

package: TO-247-3

IXTP72N20T

IXYS

MOSFET N-CH 200V 72A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

IXTA160N10T7

IXYS

MOSFET N-CH 100V 160A TO-263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 430W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7 (IXTA..7)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTA62N15P

IXYS

MOSFET N-CH 150V 62A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 350W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFB150N65X2

IXYS

MOSFET N-CH 650V 150A PLUS264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1560W (Tc)
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS264?
• Package / Case: TO-264-3, TO-264AA

package: TO-264-3, TO-264AA

IXTX120N65X2

IXYS

MOSFET N-CH 650V 120A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

package: TO-247-3

IXTA3N120

IXYS

MOSFET N-CH 1.2KV 3A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VHF55-12IO7

IXYS

RECT BRIDGE 1PH 1200V FO-T-A

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number of SCRs, Diodes: 2 SCRs, 2 Diodes
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 53A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A

package: FO-T-A

MCD700-12IO1W

IXYS

SCR THRYRISTOR 1200V WC-500

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 700A
• Current - On State (It (RMS)) (Max): 1331A
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
• Current - Hold (Ih) (Max): -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: WC-500

package: WC-500

VW2X60-14IO1

IXYS

AC CONTROLL MODULE 1400V 60A

• Structure: 2-Phase Controller - All SCRs
• Number of SCRs, Diodes: 4 SCRs
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 27A
• Current - On State (It (RMS)) (Max): 43A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

package: Module

ME0500-06DA

IXYS

DIODE MODULE 600V 514A Y4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 514A
• Voltage - Forward (Vf) (Max) @ If: 1.36V @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 24mA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Y4
• Supplier Device Package: Y4
• Operating Temperature - Junction: -

package: Y4

DSA60C60PB

IXYS

DIODE ARRAY SCHOTTKY 60V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

package: TO-220-3

VUO100-16NO7

IXYS

RECT BRIDGE 100A 1600V FO-T-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
• Current - Reverse Leakage @ Vr: 500µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A
• Supplier Device Package: FO-T-A

package: FO-T-A

VUO64-16NO7

IXYS

DIODE BRIDGE 1600V 60A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
• Current - Reverse Leakage @ Vr: 40µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-D
• Supplier Device Package: PWS-D-Flat

package: PWS-D

VUO35-16NO7

IXYS

RECT BRIDGE 3PH 38A 1600V PWS-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 38A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
• Current - Reverse Leakage @ Vr: 40µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-A
• Supplier Device Package: PWS-A

package: PWS-A

IXS839BQ2

IXYS

IC MOSFET DRIVER SYNC BUCK 10QFN

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 5.5 V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 2A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 24V
• Rise / Fall Time (Typ): 20ns, 15ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 10-VFQFN Exposed Pad
• Supplier Device Package: 10-QFN (3x3)

package: 10-VFQFN Exposed Pad

IXDI430MYI

IXYS

IC DRVR MOSF/IGBT 30A TO263-5

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 8.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 30A, 30A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 18ns, 16ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: TO-263 (D2Pak)

package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

IXBOD1-21R

IXYS

IC DIODE MODULE BOD 0.9A 2100V

• Voltage - Clamping: 2100V (2.1kV)
• Technology: Mixed Technology
• Number of Circuits: 3
• Number of Circuits: 3
• Applications: High Voltage
• Mounting Type: PCB, Through Hole
• Package / Case: Radial
• Supplier Device Package: BOD

package: Radial

IXTY18P10T-TRL

IXYS

MOSFET P-CH 100V 18A TO252

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

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IXTT75N15

IXYS

MOSFET N-CH 150V 75A TO268

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

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IXA20I1200HB

IXYS

IGBT 1200V 38A 200W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

Request a Quote