IXYS Producten

IXRH40N120

IXYS

IGBT 1200V 55A 300W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
• Power - Max: 300W
• Switching Energy: 3mJ (on), 700µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 35A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 2.1µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

package: TO-247-3

IXST40N60B2D1

IXYS

IGBT 600V 48A TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGX35N120BD1

IXYS

IGBT 1200V 70A 350W PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
• Power - Max: 350W
• Switching Energy: 3.8mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 50ns/180ns
• Test Condition: 960V, 35A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

package: TO-247-3

IXGH25N120A

IXYS

IGBT 1200V 50A 200W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
• Power - Max: 200W
• Switching Energy: 11mJ (off)
• Input Type: Standard
• Gate Charge: 130nC
• Td (on/off) @ 25°C: 100ns/650ns
• Test Condition: 960V, 25A, 33 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

package: TO-247-3

IXGH56N60A3

IXYS

IGBT 600V 150A 330W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 370A
• Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 44A
• Power - Max: 330W
• Switching Energy: 1mJ (on), 3.75mJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 26ns/310ns
• Test Condition: 480V, 44A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

package: TO-247-3

VID50-06P1

IXYS

MOD IGBT BOOST/CHOP 600V ECOPAC2

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 42.5A
• Power - Max: 130W
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
• Current - Collector Cutoff (Max): 600µA
• Input Capacitance (Cies) @ Vce: 16nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

package: ECO-PAC2

IXFN44N50U2

IXYS

MOSFET N-CH 500V 44A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 44A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

package: SOT-227-4, miniBLOC

IXFZ520N075T2

IXYS

MOSFET N-CH 75V 465A DE-475

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 465A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 545nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 41000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DE475
• Package / Case: DE475

package: DE475

IXTT88N30P

IXYS

MOSFET N-CH 300V 88A TO-268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTA1N120P

IXYS

MOSFET N-CH 1200V 1A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTQ22N50P

IXYS

MOSFET N-CH 500V 22A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 350W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

package: TO-3P-3, SC-65-3

IXTT12N150HV

IXYS

MOSFET N-CH 1.5KV 12A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFH170N25X3

IXYS

MOSFET N-CH 250V 170A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 85A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXFH)
• Package / Case: TO-247-3

package: TO-247-3

IXFA220N06T3

IXYS

60V/220A TRENCHT3 HIPERFET MOSFE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 440W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFX64N50P

IXYS

MOSFET N-CH 500V 64A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 830W (Tc)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

package: TO-247-3

VYK70-12IO7

IXYS

MOD THYRISTOR 3PH 3X28A 1200V

• Structure: Common Cathode - All SCRs
• Number of SCRs, Diodes: 3 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 28A
• Current - On State (It (RMS)) (Max): 43A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

package: Module

DHG5I600PA

IXYS

DIODE GEN PURP 600V 5A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

package: TO-220-2

DSS6-0025BS

IXYS

DIODE SCHOTTKY 25V 6A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 25V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 400mV @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 6mA @ 25V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 150°C

package: TO-252-3, DPak (2 Leads + Tab), SC-63

DSEI2X61-12B

IXYS

DIODE MODULE 1.2KV 52A SOT227B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 52A
• Voltage - Forward (Vf) (Max) @ If: 2.5V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 2.2mA @ 1200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

package: SOT-227-4, miniBLOC

VUO22-16NO1

IXYS

RECT BRIDGE 3PH 25A 1600V V1-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.19V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1-A
• Supplier Device Package: V1-A

package: V1-A

VBO78-16NO7

IXYS

DIODE BRIDGE 1600V 76A ECO-PAC2

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 78A
• Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
• Current - Reverse Leakage @ Vr: 100µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

package: ECO-PAC2

IXK611S1T/R

IXYS

IC DRIVER HALF BRIDGE GATE 8SOIC

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Supplier Device Package: 8-SOIC

package: 8-SOIC

M1022LC160

IXYS

DIODE GEN PURP 1.6KV 1022A W4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 1022A
• Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 1600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: W4
• Operating Temperature - Junction: -40°C ~ 125°C

package: -

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W1032LC500

IXYS

DIODE GEN PURP 5KV 1032A W4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 5000 V
• Current - Average Rectified (Io): 1032A
• Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 2420 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 µs
• Current - Reverse Leakage @ Vr: 30 mA @ 5000 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: W4
• Operating Temperature - Junction: -40°C ~ 150°C

package: -

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IXTT140N10P-TRL

IXYS

MOSFET N-CH 100V 140A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

package: -

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IXFA26N65X3

IXYS

DISCRETE MOSFET 26A 650V X3 TO26

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 357W (Tc)
• Rds On (Max) @ Id, Vgs: 155mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXFA)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -

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CLE20E1200PC-TUB

IXYS

SCR 1.2KV 35A TO263

• Voltage - Off State: 1.2 kV
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 40 mA
• Voltage - On State (Vtm) (Max): 1.54 V
• Current - On State (It (AV)) (Max): 20 A
• Current - On State (It (RMS)) (Max): 35 A
• Current - Hold (Ih) (Max): 50 mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 175A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

package: -

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IXXH75N60B3

IXYS

DISC IGBT XPT-GENX3 TO-247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 160 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
• Power - Max: 750 W
• Switching Energy: 1.7mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 107 nC
• Td (on/off) @ 25°C: 35ns/118ns
• Test Condition: 400V, 60A, 5Ohm, 15V
• Reverse Recovery Time (trr): 75 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXXH)

package: -

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