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IXYS |
IGBT 1200V 75A 380W TO268
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
- Power - Max: 380W
- Switching Energy: 4.5mJ (on), 3mJ (off)
- Input Type: Standard
- Gate Charge: 138nC
- Td (on/off) @ 25°C: 21ns/290ns
- Test Condition: 960V, 40A, 2 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Voorraad7.024 |
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IXYS |
MOD IGBT H-BRIDGE 600V ECO-PAC2
- IGBT Type: NPT
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 69A
- Power - Max: 208W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
- Current - Collector Cutoff (Max): 800µA
- Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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package: ECO-PAC2 |
Voorraad2.352 |
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IXYS |
MOSFET N-CH 55V 240A TO-263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7 (IXTA..7)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Voorraad5.680 |
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IXYS |
MOSFET P-CH 200V 120A PLUS247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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package: TO-247-3 |
Voorraad5.168 |
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IXYS |
MOSFET N-CH 300V 52A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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package: TO-264-3, TO-264AA |
Voorraad7.232 |
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IXYS |
MOSFET N-CH 500V 4.8A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad3.824 |
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IXYS |
MOSFET N-CH 300V 120A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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package: TO-247-3 |
Voorraad3.008 |
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IXYS |
MOSFET N-CH 800V 32A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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package: TO-247-3 |
Voorraad6.024 |
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IXYS |
SCR THYRISTOR CA 1400V WC-500
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 700A
- Current - On State (It (RMS)) (Max): 1331A
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
- Current - Hold (Ih) (Max): -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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package: WC-500 |
Voorraad3.600 |
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IXYS |
RECT BRIDGE 3PH 167A 1400V PWSE2
- Structure: Bridge, 3-Phase - SCRs/Diodes
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 167A
- Current - On State (It (RMS)) (Max): 89A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E2
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package: PWS-E2 |
Voorraad7.904 |
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MOD THYRISTOR DUAL 800V Y2-DCB
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 287A
- Current - On State (It (RMS)) (Max): 450A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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package: Y2-DCB |
Voorraad2.992 |
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IXYS |
MODULE THYRISTOR 1600V V1 PAC
- Structure: Bridge, 3-Phase - SCRs/Diodes
- Number of SCRs, Diodes: 2 SCRs, 4 Diodes
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 34A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 320A @ 50Hz
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
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package: Module |
Voorraad6.240 |
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DIODE GEN PURP 300V 10A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.27V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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package: TO-220-2 |
Voorraad6.800 |
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DIODE MODULE 1KV 60A ECO-PAC1
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io) (per Diode): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 3mA @ 1000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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package: ECO-PAC1 |
Voorraad3.152 |
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DIODE MODULE 14KV 1.7A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 14000V
- Current - Average Rectified (Io) (per Diode): 1.7A
- Voltage - Forward (Vf) (Max) @ If: 10V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 14000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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package: Module |
Voorraad7.760 |
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IXYS |
DIODE MODULE 1.4KV 120A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 1400V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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package: TO-240AA |
Voorraad7.728 |
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IXYS |
DIODE ARRAY GP 1200V 28A TO268AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 28A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 55A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 1200V
- Operating Temperature - Junction: -40°C ~ 180°C
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Voorraad5.664 |
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IXYS |
RECT BRIDGE 3PH 38A 1800V PWS-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 38A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Current - Reverse Leakage @ Vr: 40µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-A
- Supplier Device Package: PWS-A
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package: PWS-A |
Voorraad5.968 |
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IC DRVR HALF BRIDGE 600MA 14SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 35 V
- Logic Voltage - VIL, VIH: 2.4V, 2.7V
- Current - Peak Output (Source, Sink): 600mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 28ns, 18ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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package: 14-SOIC (0.154", 3.90mm Width) |
Voorraad3.408 |
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IC CURRENT REGULATOR DPAK
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 40mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad3.920 |
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IXYS |
SCR 1.2KV 35A TO263
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Gate Trigger (Igt) (Max): 20 mA
- Voltage - On State (Vtm) (Max): 1.4 V
- Current - On State (It (AV)) (Max): 20 A
- Current - On State (It (RMS)) (Max): 35 A
- Current - Hold (Ih) (Max): 25 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 130A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
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package: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.6KV 30A TO263AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 10pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
- Operating Temperature - Junction: -40°C ~ 175°C
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package: - |
Voorraad7.659 |
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IXYS |
SCR 2KV 1490A W10
- Voltage - Off State: 2 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2.7 V
- Current - On State (It (AV)) (Max): 736 A
- Current - On State (It (RMS)) (Max): 1490 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: W10
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package: - |
Request a Quote |
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IXYS |
MOSFET N-CH 850V 8A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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package: - |
Request a Quote |
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IXYS |
MOD SCR THYRISTOR 1200V
- Structure: 2-Phase Controller - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1.2 kV
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A
- Current - Hold (Ih) (Max): -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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package: - |
Request a Quote |
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IXYS |
MOSFET 90A 650V X3 TO264K
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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package: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.2KV 11A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 11A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
- Capacitance @ Vr, F: 6pF @ 600V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -40°C ~ 150°C
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package: - |
Request a Quote |
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IXYS |
MOSFET N-CH 300V 36A TO3P
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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package: - |
Request a Quote |
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