IXYS Producten

IXSX50N60AU1

IXYS

IGBT 600V 75A 300W PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
• Power - Max: 300W
• Switching Energy: 6mJ (off)
• Input Type: Standard
• Gate Charge: 190nC
• Td (on/off) @ 25°C: 70ns/200ns
• Test Condition: 480V, 50A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

package: TO-247-3

IXSR35N120BD1

IXYS

IGBT 1200V 70A 250W ISOPLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
• Power - Max: 250W
• Switching Energy: 5mJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 36ns/160ns
• Test Condition: 960V, 35A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 40ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

package: ISOPLUS247?

IXGR60N60B2D1

IXYS

IGBT 600V 75A 250W ISOPLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 250W
• Switching Energy: 1mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 28ns/160ns
• Test Condition: 400V, 50A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISOPLUS247?

package: TO-247-3

IXGH50N60A

IXYS

IGBT 600V 75A 250W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
• Power - Max: 250W
• Switching Energy: 4.8mJ (off)
• Input Type: Standard
• Gate Charge: 200nC
• Td (on/off) @ 25°C: 50ns/200ns
• Test Condition: 480V, 50A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

package: TO-247-3

IXYF30N450

IXYS

IGBT 450V

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 4500V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 190A
• Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
• Power - Max: 230W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 88nC
• Td (on/off) @ 25°C: 38ns/168ns
• Test Condition: 960V, 30A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5 (3 leads)
• Supplier Device Package: ISOPLUS i4-PAC?

package: i4-Pac?-5 (3 leads)

IXBH14N250

IXYS

IGBT 2500V TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXBH)

package: TO-247-3

IXGT15N120B

IXYS

IGBT 1200V 30A 180W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
• Power - Max: 180W
• Switching Energy: 1.75mJ (off)
• Input Type: Standard
• Gate Charge: 69nC
• Td (on/off) @ 25°C: 25ns/180ns
• Test Condition: 960V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGH85N30C3

IXYS

IGBT 300V 75A 333W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 420A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
• Power - Max: 333W
• Switching Energy: 200µJ (on), 390µJ (off)
• Input Type: Standard
• Gate Charge: 136nC
• Td (on/off) @ 25°C: 25ns/100ns
• Test Condition: 200V, 42.5A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

package: TO-247-3

VII25-12P1

IXYS

MOD IGBT PHASE LEG 1200V ECOPAC2

• IGBT Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Power - Max: 130W
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 25A
• Current - Collector Cutoff (Max): 900µA
• Input Capacitance (Cies) @ Vce: 1nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

package: ECO-PAC2

IXTP50N085T

IXYS

MOSFET N-CH 85V 50A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 85V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

IXFR48N50Q

IXYS

MOSFET N-CH 500V 40A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 310W (Tc)
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

package: ISOPLUS247?

IXFA5N100P

IXYS

MOSFET N-CH 1000V 5A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXFA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFP14N85X

IXYS

MOSFET N-CH 850V 14A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 850V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB (IXFP)
• Package / Case: TO-220-3

package: TO-220-3

VHO55-08IO7

IXYS

RECT BRIDGE 1PH 800V FO-T-A

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number of SCRs, Diodes: 2 SCRs, 2 Diodes
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 53A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A

package: FO-T-A

MCD44-08IO1B

IXYS

MOD THYRISTOR DUAL 800V TO-240AA

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 51A
• Current - On State (It (RMS)) (Max): 80A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

package: TO-240AA

DSS10-01AS-TUB

IXYS

DIODE SCHOTTKY 100V 10A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DSS10-01A

IXYS

DIODE SCHOTTKY 100V 10A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-220-2

VUO52-20NO1

IXYS

RECT BRIDGE 3PH 54A 2000V V1-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 2000V
• Current - Average Rectified (Io): 54A
• Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A
• Current - Reverse Leakage @ Vr: 40µA @ 2000V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1-A
• Supplier Device Package: V1-A

package: V1-A

IXDI514SIA

IXYS

IC GATE DRIVER SGL 14A 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 1V, 2.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: 8-SOIC (0.154", 3.90mm Width)

IXDI414YI

IXYS

IC DRIVER MOSF/IGBT 14A TO263-5

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 22ns, 20ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: TO-263 (D2Pak)

package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

IXRFD630

IXYS

IC MOSFET DVR RF 30A HI DCB

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel, P-Channel MOSFET
• Voltage - Supply: 8 V ~ 18 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 30A, 30A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 4ns, 4ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: 6-SMD, Flat Lead Exposed Pad
• Supplier Device Package: -

package: 6-SMD, Flat Lead Exposed Pad

IXBOD1-23R

IXYS

IC DIODE MODULE BOD 0.9A 2300V

• Voltage - Clamping: 2300V (2.3kV)
• Technology: Mixed Technology
• Number of Circuits: 3
• Number of Circuits: 3
• Applications: High Voltage
• Mounting Type: PCB, Through Hole
• Package / Case: Radial
• Supplier Device Package: BOD

package: Radial

IXGA20N120B3-TRL

IXYS

IXGA20N120B3 TRL

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 36 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
• Power - Max: 180 W
• Switching Energy: 920µJ (on), 560µJ (off)
• Input Type: Standard
• Gate Charge: 51 nC
• Td (on/off) @ 25°C: 16ns/150ns
• Test Condition: 600V, 16A, 15Ohm, 15V
• Reverse Recovery Time (trr): 31 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

package: -

Request a Quote

IXA4IF1200UC-TUB

IXYS

DISC IGBT XPT-GENX3 TO-252D

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 9 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
• Power - Max: 45 W
• Switching Energy: 400µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 12 nC
• Td (on/off) @ 25°C: 70ns/250ns
• Test Condition: 600V, 3A, 330Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

package: -

Request a Quote

IXTA6N100D2HV

IXYS

MOSFET N-CH 1000V 6A TO263HV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263HV
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -

Request a Quote

IXFP56N30X3M

IXYS

MOSFET N-CH 300V 56A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300 V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 36W (Tc)
• Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Isolated Tab
• Package / Case: TO-220-3 Full Pack, Isolated Tab

package: -

IXTA230N075T2-TRL

IXYS

MOSFET N-CH 75V 230A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75 V
• Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -

Request a Quote

N1449QL200

IXYS

SCR 2KV 2790A WP6

• Voltage - Off State: 2 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 2.65 V
• Current - On State (It (AV)) (Max): 1410 A
• Current - On State (It (RMS)) (Max): 2790 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, B-PuK
• Supplier Device Package: WP6

package: -

Request a Quote