Infineon Technologies Producten

IRFH7190TRPBF

Infineon Technologies

MOSFET N-CH 100V 15A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 82A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1685pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 49A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6)
• Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

IRFH5207TRPBF

Infineon Technologies

MOSFET N-CH 75V 13A 8-PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2474pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
• Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 43A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6)
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

IPP45N06S3L-13

Infineon Technologies

MOSFET N-CH 55V 45A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 65W (Tc)
• Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

package: TO-220-3

IRFR2607Z

Infineon Technologies

MOSFET N-CH 75V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

SPI12N50C3XKSA1

Infineon Technologies

MOSFET N-CH 560V 11.6A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560V
• Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

AUIRFN7110TR

Infineon Technologies

MOSFET NCH 100V 58A PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6)
• Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

IPB120N04S404ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SN7002NH6433XTMA1

Infineon Technologies

MOSFET N-CH 60V 200MA SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 26µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

BSZ097N10NS5ATMA1

Infineon Technologies

MOSFET N-CH 100V 40A TSDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 36µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
• Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8-FL
• Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

IRFH3702TRPBF

Infineon Technologies

MOSFET N-CH 30V 16A 8PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta)
• Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (3x3)
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

IRF8721TRPBF

Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

BFP420FH6327XTSA1

Infineon Technologies

TRANS RF NPN 5.5V 35MA 4TSFP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
• Gain: 19.5dB
• Power - Max: 160mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

package: 4-SMD, Flat Leads

TLE4254GAXUMA3

Infineon Technologies

IC REG LINEAR 70MA 8DSO

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 70mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

package: 8-SOIC (0.154", 3.90mm Width)

BTS5012SDA

Infineon Technologies

IC PWR SW SMART HISIDE TO252-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 20 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 6A
• Rds On (Typ): 12 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: PG-TO252-5

package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

BTS50202EKAXUMA2

Infineon Technologies

IC PWR SW HI-SIDE 2CH DSO14-40

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 8 V ~ 18 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 5A
• Rds On (Typ): 40 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-14-40-EP

package: 14-SOIC (0.154", 3.90mm Width) Exposed Pad

CHL8112A-05CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

SAF-XC2287M-56F80L26 AA

Infineon Technologies

IC MCU 16BIT 144LQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

SIGC12T60NCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 21ns/110ns
• Test Condition: 300V, 10A, 27Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

package: -

Request a Quote

DD800S17HA_B2

Infineon Technologies

RECTIFIER DIODE MODULE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

package: -

Request a Quote

BSM50GAL120DN2HOSA1

Infineon Technologies

IGBT MOD 1200V 78A 400W

• IGBT Type: -
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 78 A
• Power - Max: 400 W
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

Request a Quote

FP75R07N2E4B11BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 95 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

package: -

Request a Quote

C167CSL16M3VCAFXQLA1

Infineon Technologies

IC MCU 16BIT ROMLESS 144MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 111
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 11K x 8
• Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
• Data Converters: A/D 24x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-BQFP
• Supplier Device Package: P-MQFP-144-8

package: -

Request a Quote

2ED21094S06JXUMA1

Infineon Technologies

IC HALF BRIDGE GATE DRIVER 650V

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10V ~ 20V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): 290mA, 700mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 650 V
• Rise / Fall Time (Typ): 100ns, 35ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14-49

package: -

FS100R12PT4BOSA1

Infineon Technologies

IGBT MOD 1200V 135A 500W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 135 A
• Power - Max: 500 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

Request a Quote

DD171N12KKHPSA1

Infineon Technologies

DIODE MODULE GP 1.2KV 171A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io) (per Diode): 171A
• Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

Request a Quote

TD122N22KOFHPSA1

Infineon Technologies

SCR MODULE 2400V 220A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 2.4 kV
• Current - On State (It (AV)) (Max): 140 A
• Current - On State (It (RMS)) (Max): 220 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

package: -

Request a Quote

FF225R12ME4PBPSA1

Infineon Technologies

IGBT MOD 1200V 450A 20MW

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 450 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

Request a Quote

PSB2132HV2-2

Infineon Technologies

SICOFI-TE TWO CHANNEL CODEC

• Function: CODEC Filter
• Interface: IOM-2 PCM, SPI
• Number of Circuits: 2
• Voltage - Supply: 5V
• Current - Supply: 18mA
• Power (Watts): 90 mW
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: P-MQFP-64

package: -

Request a Quote