Infineon Technologies Producten

IRF7171MTRPBF

Infineon Technologies

MOSFET N-CH 100V 15A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 56A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MN
• Package / Case: DirectFET? Isometric MN

package: DirectFET? Isometric MN

BSD214SN L6327

Infineon Technologies

MOSFET N-CH 20V 1.5A SOT-363

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
• Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT363-6
• Package / Case: 6-VSSOP, SC-88, SOT-363

package: 6-VSSOP, SC-88, SOT-363

SPI11N60CFDHKSA1

Infineon Technologies

MOSFET N-CH 650V 11A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

IPB120N06N G

Infineon Technologies

MOSFET N-CH 60V 75A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 94µA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 158W (Tc)
• Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFSL4610

Infineon Technologies

MOSFET N-CH 100V 73A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

IPD50N06S214ATMA2

Infineon Technologies

MOSFET N-CH 55V 50A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 32A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF5210LPBF

Infineon Technologies

MOSFET P-CH 100V 38A TO-262

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

IPB009N03L G

Infineon Technologies

MOSFET N-CH 30V 180A TO263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7-3
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

BSC014NE2LSI

Infineon Technologies

MOSFET N-CH 25V 33A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

GTVA220701FAV1R2XTMA1

Infineon Technologies

GAN SIC

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

package: -

IRU1175CSTR

Infineon Technologies

IC REG LINEAR 7.5A 8SOIC

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 7.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: 8-SOIC (0.154", 3.90mm Width)

ICE3A2065ZXKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS CM 7DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 15V
• Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
• Duty Cycle: 72%
• Frequency - Switching: 100kHz
• Power (Watts): 57W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7-1
• Mounting Type: Through Hole

package: 8-DIP (0.300", 7.62mm), 7 Leads

XMC4700F144K1536AAXQMA1

Infineon Technologies

IC MCU 32BIT 1.5MB FLASH 144LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 144MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
• Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
• Number of I/O: 119
• Program Memory Size: 1.5MB (1.5M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 276K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 32x12b, D/A 2x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-144-24

package: 144-LQFP Exposed Pad

XC2238N40F80LAAKXUMA1

Infineon Technologies

IC MCU 16BIT 320KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 320KB (320K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 42K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-6

package: 64-LQFP Exposed Pad

V23818-M305-L57

Infineon Technologies

TXRX ETHRNET MULT-MODE 1.25GBIT

• Data Rate: 2.125Gbps
• Wavelength: 850nm
• Applications: Ethernet
• Voltage - Supply: 3.1 V ~ 3.5 V
• Connector Type: LC Duplex
• Mounting Type: Through Hole

package: -

ESD5V3S1U-02LRH E6327

Infineon Technologies

TVS DIODE 5.3VWM 11VC TSLP2

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.3V (Max)
• Voltage - Breakdown (Min): 5.7V
• Voltage - Clamping (Max) @ Ipp: 11V
• Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
• Power - Peak Pulse: 66W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 35pF @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: PG-TSLP-2

package: SOD-882

TC223S16F133FACKXUMA1

Infineon Technologies

IC MCU 32BIT 1MB FLASH 100TQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

TLE9273QXV33XUMA1

Infineon Technologies

IC REG 4OUT VQFN-48-31

• Applications: -
• Voltage - Input: -
• Number of Outputs: 4
• Voltage - Output: 3.3V, 5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31

package: 48-VFQFN Exposed Pad

IPLK80R2K0P7ATMA1

Infineon Technologies

MOSFET 800V TDSON-8

• FET Type: -
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

package: -

Request a Quote

D850N36TXPSA1

Infineon Technologies

DIODE GEN PURP 3.6KV 850A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3600 V
• Current - Average Rectified (Io): 850A
• Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 160°C

package: -

Request a Quote

XDPL8219XUMA1

Infineon Technologies

IC LED DRVR CTRLR NO 100MA 8DSO

• Type: DC DC Controller
• Topology: Flyback
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 6V
• Voltage - Supply (Max): 24V
• Voltage - Output: -
• Current - Output / Channel: 100mA
• Frequency: 15MHz
• Dimming: No
• Applications: LED Lighting
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-41

package: -

FF900R12IP4VBOSA1

Infineon Technologies

IGBT MOD 1200V 900A 5100W

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 900 A
• Power - Max: 5100 W
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

Request a Quote

CG8216AA

Infineon Technologies

IC SRAM MICROPOWER

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

Request a Quote

DD171N18KHPSA1

Infineon Technologies

DIODE MODULE GP 1800V 171A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io) (per Diode): 171A
• Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

Request a Quote

FD1000R17IE4BOSA2

Infineon Technologies

IGBT MODULE 1700V 6250W

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): -
• Power - Max: 6250 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

Request a Quote

IRFH3702TR2PBF

Infineon Technologies

MOSFET N-CH 30V 16A 8PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (3x3)
• Package / Case: 8-PowerVDFN

package: -

Request a Quote

IAUS260N10S5N019TATMA1

Infineon Technologies

MOSFET N-CH 100V 260A HDSOP-16-2

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 210µA
• Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-16-2
• Package / Case: 16-PowerSOP Module

package: -

CY8C4147LQA-S243

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

package: -

Request a Quote