Infineon Technologies Producten

IRG4RC10KPBF

Infineon Technologies

IGBT 600V 9A 38W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
• Power - Max: 38W
• Switching Energy: 160µJ (on), 100µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 11ns/51ns
• Test Condition: 480V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFHP8321TRPBF

Infineon Technologies

MOSFET 30V 25A POWER 8-SO

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

IRLR9343-701PBF

Infineon Technologies

MOSFET P-CH 55V 20A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF6215L-103PBF

Infineon Technologies

MOSFET P-CH 150V 13A TO-262

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFI2807

Infineon Technologies

MOSFET N-CH 75V 40A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB Full-Pak
• Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

IRF7321D2

Infineon Technologies

MOSFET P-CH 30V 4.7A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

IRFP044N

Infineon Technologies

MOSFET N-CH 55V 53A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 29A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

package: TO-247-3

IRFP250MPBF

Infineon Technologies

MOSFET N-CH 200V 30A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2159pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 214W (Tc)
• Rds On (Max) @ Id, Vgs: 75 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

package: TO-247-3

IPB80N06S2L06ATMA2

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 180µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 69A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BCR10PNH6327XTSA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 130MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

package: 6-VSSOP, SC-88, SOT-363

BBY5103WE6327HTSA1

Infineon Technologies

DIODE TUNING 7V 20MA SOD-323

• Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
• Capacitance Ratio: 2.2
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 7V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: PG-SOD323-2

package: SC-76, SOD-323

HFA15PB60PBF

Infineon Technologies

DIODE GEN PURP 600V 15A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC Modified
• Operating Temperature - Junction: -55°C ~ 150°C

package: TO-247-2

BAW 56W H6327

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT323

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 150nA @ 70V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

package: SC-70, SOT-323

TLS202B1MBV50HTSA1

Infineon Technologies

LINEAR VOLTAGE REGULATOR

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 18V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.57V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 50µA
• PSRR: 63dB (10kHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

IPS1011RTRRPBF

Infineon Technologies

IC SWITCH IPS 1CH LOW SIDE DPAK

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 28V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 6A
• Rds On (Typ): 10 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

package: TO-252-3, DPak (2 Leads + Tab), SC-63

BTS500601TEAAUMA2

Infineon Technologies

IC PWR SW HI-SIDE 1CH TO252-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 19 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 16.5A
• Rds On (Typ): 6.8 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: PG-TO252-5-11

package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

ICE2QS03HKLA1

Infineon Technologies

IC CTRLR PWM QUASI-RESON 8DIP

• Output Isolation: Isolated
• Internal Switch(s): No
• Voltage - Breakdown: -
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
• Duty Cycle: 50%
• Frequency - Switching: 52kHz
• Power (Watts): -
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -25°C ~ 125°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8-6
• Mounting Type: Through Hole

package: 8-DIP (0.300", 7.62mm)

ICE3B5565I

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP TO220

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 15V
• Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
• Duty Cycle: 72%
• Frequency - Switching: 67kHz
• Power (Watts): 240W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: TO-220-6 Formed Leads
• Supplier Device Package: PG-TO220-6
• Mounting Type: Through Hole

package: TO-220-6 Formed Leads

TLE4976-1H

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SC59

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 11mT Trip, 5mT Release
• Test Condition: -40°C ~ 150°C
• Voltage - Supply: 3 V ~ 18 V
• Current - Supply (Max): 17mA
• Current - Output (Max): -
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59

package: TO-236-3, SC-59, SOT-23-3

TLI4970D025T4XUMA1

Infineon Technologies

IC CURRENT SENSOR 8TISON

• For Measuring: AC/DC
• Sensor Type: Hall Effect, Differential
• Current - Sensing: 25A
• Number of Channels: 1
• Output: SPI
• Sensitivity: -
• Frequency: DC ~ 18kHz
• Linearity: ±1.6%
• Accuracy: ±0.05%
• Voltage - Supply: 3.1 V ~ 3.5 V
• Response Time: 57µs
• Current - Supply (Max): 20mA
• Operating Temperature: -40°C ~ 85°C
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-SMD Module

package: 8-SMD Module

CY8C4147AZA-S285T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

package: -

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BSB044N08NN3GXUMA1

Infineon Technologies

MOSFET N-CH 80V 18A/90A 2WDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 97µA
• Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
• Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-2, CanPAK M™
• Package / Case: 3-WDSON

package: -

BTH500301LUAAUMA1

Infineon Technologies

MULTICHIP PROFET & GD

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

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CY9BF322LPMC1-G-MNE2

Infineon Technologies

IC MCU 32BIT 160KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 72MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 50
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 23x12b; D/A 2x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

package: -

FF225R65T3E3P5BPMA1

Infineon Technologies

IHV IHM T XHP 3 3-6 5K AG-XHP3K6

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 5900 V
• Current - Collector (Ic) (Max): 225 A
• Power - Max: 1000 W
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-XHP3K65

package: -

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IRGC100B120KB

Infineon Technologies

IGBT CHIP

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

package: -

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TDA38813XUMA1

Infineon Technologies

IFX POL

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2.7V
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 0.9V
• Voltage - Output (Max): 6V
• Current - Output: 12A
• Frequency - Switching: 600kHz, 800kHz, 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 21-PowerUFQFN
• Supplier Device Package: PG-TSNP-21-1

package: -

D2520N22TVFXPSA1

Infineon Technologies

DIODE GEN PURP 2520A D7526K0-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 2520A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75 mA @ 2200 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: BG-D7526K0-1
• Operating Temperature - Junction: -40°C ~ 175°C

package: -

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