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Infineon Technologies Producten

Archief 16.988
Pagina  150/607
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Aantal
IRG4IBC20FD
Infineon Technologies

IGBT 600V 14.3A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14.3A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 34W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
package: TO-220-3 Full Pack
Voorraad5.424
IRGR4610DTRPBF
Infineon Technologies

IGBT 600V 16A 77W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad7.536
IKP15N65F5XKSA1
Infineon Technologies

IGBT 650V 30A 105W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 105W
  • Switching Energy: 130µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 17ns/150ns
  • Test Condition: 400V, 7.5A, 39 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
package: TO-220-3
Voorraad9.792
BSB012N03LX3 G
Infineon Technologies

MOSFET N-CH 30V 180A 2WDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-2, CanPAK M?
  • Package / Case: 3-WDSON
package: 3-WDSON
Voorraad3.520
IPB034N06N3GATMA1
Infineon Technologies

MOSFET N-CH 60V 100A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 93µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Voorraad6.048
hot IRFI9Z34N
Infineon Technologies

MOSFET P-CH 55V 14A TO-220FP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad8.448
hot IRF6215S
Infineon Technologies

MOSFET P-CH 150V 13A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad136.596
AUIRL1404ZL
Infineon Technologies

MOSFET N-CH 40V 160A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad2.112
hot IRFR3711ZTRPBF
Infineon Technologies

MOSFET N-CH 20V 93A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad24.000
hot IRFI4229PBF
Infineon Technologies

MOSFET N-CH 250V 19A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4480pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 11A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad884.460
hot IRF6620TRPBF
Infineon Technologies

MOSFET N-CH 20V 27A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4130pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 27A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
package: DirectFET? Isometric MX
Voorraad1.466.208
PTFB093608FVV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad6.848
BAR 95-02LS E6327
Infineon Technologies

DIODE PIN ASM 50V 100MA TSSLP2

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 50V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
  • Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 2-XFDFN
  • Supplier Device Package: PG-TSSLP-2
package: 2-XFDFN
Voorraad6.576
IRS279524SPBF
Infineon Technologies

IC REG CTRLR BCK/HALF-BRG 14SOIC

  • Output Type: Transistor Driver
  • Function: Step-Down, Step-Up/Step-Down
  • Output Configuration: Positive, Isolation Capable
  • Topology: Buck, Half-Bridge
  • Number of Outputs: 2
  • Output Phases: 2
  • Voltage - Supply (Vcc/Vdd): 12 V ~ 18 V
  • Frequency - Switching: Up to 500kHz
  • Duty Cycle (Max): 50%
  • Synchronous Rectifier: Yes
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Enable, Frequency Control
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
package: 14-SOIC (0.154", 3.90mm Width)
Voorraad4.240
TLE8108EMXUMA1
Infineon Technologies

IC SW SMART LOW SIDE 8CH 24SSOP

  • Switch Type: Relay, Solenoid Driver
  • Number of Outputs: 8
  • Ratio - Input:Output: 1:2
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: SPI
  • Voltage - Load: 4.5 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): 400mA
  • Rds On (Typ): 800 mOhm
  • Input Type: -
  • Features: -
  • Fault Protection: Open Load Detect, Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-SSOP-24
package: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voorraad7.584
IR2159S
Infineon Technologies

IC BALLAST CONTROL DIM 16-SOIC

  • Type: Ballast Controller
  • Frequency: 25kHz ~ 95kHz
  • Voltage - Supply: 12 V ~ 16.5 V
  • Current - Supply: 10mA
  • Current - Output Source/Sink: -
  • Dimming: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
package: 16-SOIC (0.154", 3.90mm Width)
Voorraad5.920
KP229K0115XTMA1
Infineon Technologies

IC PRESSURE SENSOR 8DSOF

  • Pressure Type: -
  • Operating Pressure: -
  • Output Type: -
  • Output: -
  • Accuracy: -
  • Voltage - Supply: -
  • Port Size: -
  • Port Style: -
  • Features: -
  • Termination Style: -
  • Maximum Pressure: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad2.754
TLV49462LHALA1
Infineon Technologies

MAGNETIC SWITCH LATCH SSO-3

  • Function: Latch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 3.5mT Trip, -3.5mT Release
  • Test Condition: -40°C ~ 85°C
  • Voltage - Supply: 2.7 V ~ 18 V
  • Current - Supply (Max): 6mA
  • Current - Output (Max): 20mA
  • Output Type: Open Drain
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 3-SIP, SSO-3-02
  • Supplier Device Package: SSO-3
package: 3-SIP, SSO-3-02
Voorraad8.658
SIPC69SN60C3X2SA1
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
FZ1600R17HP4B21BOSA2
Infineon Technologies

IGBT MODULE 1700V 1600A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 1600 A
  • Power - Max: 10500 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Request a Quote
D121N20BXPSA1
Infineon Technologies

DIODE GEN PURP 2KV 230A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 230A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
package: -
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CY7C1352B-133AC
Infineon Technologies

IC SRAM 4.5MBIT 133MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 4.5Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
package: -
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TT590N18KOFXPSA1
Infineon Technologies

THYRISTOR

  • Structure: -
  • Number of SCRs, Diodes: -
  • Voltage - Off State: -
  • Current - On State (It (AV)) (Max): -
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): -
  • Current - Gate Trigger (Igt) (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): -
  • Current - Hold (Ih) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
package: -
Voorraad6
S99GL128S90DHI010
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
FS3L50R07W2H3B11BPSA1
Infineon Technologies

IGBT MODULE 650V 75A 215W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 215 W
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Request a Quote
BAS40-06WE6327
Infineon Technologies

DIODE ARR SCHOT 40V 120MA SOT323

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 30 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3-1
package: -
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BSP76E6327HUSA1
Infineon Technologies

IC PWR DRVR N-CHAN 1:1 SOT223-4

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 42V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.4A
  • Rds On (Typ): 150mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
package: -
Request a Quote
BAW78C
Infineon Technologies

DIODE GEN PURP 200V 1A SOT89-4-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 10pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89-4-2
  • Operating Temperature - Junction: 150°C
package: -
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