Infineon Technologies Producten

IPB14N03LAT

Infineon Technologies

MOSFET N-CH 25V 30A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 46W (Tc)
• Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLI530NPBF

Infineon Technologies

MOSFET N-CH 100V 12A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 41W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB Full-Pak
• Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

AUIRF7313QTR

Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.9A
• Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
• Power - Max: 2.4W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

BC 860BF E6327

Infineon Technologies

TRANS PNP 45V 0.1A TSFP-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

package: SOT-723

BCX5610H6327XTSA1

Infineon Technologies

TRANSISTOR NPN SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

package: TO-243AA

BCR 141L3 E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 130MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: PG-TSLP-3

package: SC-101, SOT-883

TLE4275DNTMA1

Infineon Technologies

IC REG LIN 5V 450MA TO252-5-11

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 300mA
• Current - Output: 450mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 200µA ~ 22mA
• PSRR: 60dB (100Hz)
• Control Features: Reset
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: PG-TO252-5-11

package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

AUIPS6031RTRL

Infineon Technologies

IC SW IPS 1CH HIGH SIDE DPAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 36V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.8A
• Rds On (Typ): 46 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: D-Pak

package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

TLE7183FXUMB1

Infineon Technologies

IC MOTOR CONTROLLER PAR 48VQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 5.5 V ~ 20 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48

package: 48-VQFN Exposed Pad

IR4311MTRPBF

Infineon Technologies

IC AMP AUDIO MONO 35W PQFN22

• Type: Class D
• Output Type: 1-Channel (Mono)
• Max Output Power x Channels @ Load: 35W x 1 @ 4 Ohm
• Voltage - Supply: -
• Features: Depop, Differential Inputs
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TA)
• Supplier Device Package: 22-PQFN (5x6)
• Package / Case: 22-PowerVQFN

package: 22-PowerVQFN

XMC4104F64F128ABXQMA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 35
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 20K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 10x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-19

package: 64-LQFP Exposed Pad

XC2768X136F128LAAKXUMA1

Infineon Technologies

IC MCU 32BIT 1.06MB FLSH 100LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 128MHz
• Connectivity: CAN, EBI/EMI, FlexRay, I2C, LIN, SPI, UART/USART
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 1.06MB (1.06M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 90K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

IPB107N20NAATMA1

Infineon Technologies

MOSFET N-CH 200V 88A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -

BSC150N03LDGATMA1

Infineon Technologies

MOSFET 2N-CH 30V 8A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
• Power - Max: 26W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

package: -

CY15B108QSN-108BKXQ

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 8Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.7 ns
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (6x8)

package: -

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CYPAS212A132LQXQTXUMA1

Infineon Technologies

EZ-PD PAG2S-AC INTEGRATED USB PD

• Output Type: PWM Signal
• Function: Step-Up/Step-Down
• Output Configuration: Positive
• Topology: Flyback
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
• Frequency - Switching: 20kHz ~ 300kHz
• Duty Cycle (Max): 55%
• Synchronous Rectifier: Yes
• Clock Sync: Yes
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-QFN (5x5)

package: -

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SIDC03D60F6X1SA1

Infineon Technologies

DIODE GEN PURP 600V 6A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -40°C ~ 175°C

package: -

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TC333LP32F300FAAKXUMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 100TQFP

• Core Processor: TriCore™
• Core Size: 32-Bit Single-Core
• Speed: 300MHz
• Connectivity: DMA, I2S, PWM, WDT
• Peripherals: DMA, I2S, PWM, WDT
• Number of I/O: -
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 248K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-TQFP Exposed Pad
• Supplier Device Package: PG-TQFP-100-23

package: -

CY9AFB44MAPMC-G-JNE2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
• Peripherals: DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 66
• Program Memory Size: 288KB (288K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 17x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

package: -

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S6BT112A01SSBB202

Infineon Technologies

IC TRANSCEIVER 1/1 8SOIC

• Type: Transceiver
• Protocol: CXPI
• Number of Drivers/Receivers: 1/1
• Duplex: -
• Receiver Hysteresis: 500 mV
• Data Rate: 20kbps
• Voltage - Supply: 5.3V ~ 18V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: -

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CY9BF521LPMC1-GNE2

Infineon Technologies

IC MCU 32BIT 96KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 50
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 23x12b SAR; D/A 2x10b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

package: -

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CY8C4148AZI-S555

Infineon Technologies

IC MCU 32BIT 256KB FLASH 48LQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 54
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-TQFP (7x7)

package: -

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DD104N14KHPSA1

Infineon Technologies

DIODE MODULE GP 1.4KV 104A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400 V
• Current - Average Rectified (Io) (per Diode): 104A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

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D1030N26TXPSA1

Infineon Technologies

DIODE GEN PURP 2.6KV 1030A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2600 V
• Current - Average Rectified (Io): 1030A
• Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 10000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 160°C

package: -

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TLE6289GP

Infineon Technologies

IC BRIDGE DRIVER 3-PHASE

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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TT250N16KOFHPSA1

Infineon Technologies

SCR MODULE 1.6KV MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 250 A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

package: -

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CYPAS213A124SXQXLXA1

Infineon Technologies

EZ-PD PAG2S-PS INTEGRATED USB PD

• Output Type: PWM
• Function: Step-Up/Step-Down
• Output Configuration: Positive
• Topology: Flyback
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
• Frequency - Switching: 20kHz ~ 300kHz
• Duty Cycle (Max): 55%
• Synchronous Rectifier: Yes
• Clock Sync: Yes
• Serial Interfaces: I2C
• Control Features: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 24-SOIC

package: -

IPDD60R102G7XTMA1

Infineon Technologies

MOSFET N-CH 600V 23A HDSOP-10

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 390µA
• Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 139W (Tc)
• Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-10-1
• Package / Case: 10-PowerSOP Module

package: -

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