Infineon Technologies Producten - Transistoren - JFET's | Heisener Electronics
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Infineon Technologies Producten - Transistoren - JFET's

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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IJW120R100T1FKSA1
Infineon Technologies

JFET N-CHAN 26A TO247-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5µA @ 1200V
  • Current Drain (Id) - Max: 26A
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
  • Resistance - RDS(On): 100 mOhm
  • Power - Max: 190W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
package: TO-247-3
Voorraad3.424
-
1200V
1.5µA @ 1200V
26A
-
1550pF @ 19.5V (VGS)
100 mOhm
190W
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IJW120R070T1FKSA1
Infineon Technologies

JFET N-CHAN 35A TO247-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Drain (Idss) @ Vds (Vgs=0): 3.3µA @ 1200V
  • Current Drain (Id) - Max: 35A
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
  • Resistance - RDS(On): 70 mOhm
  • Power - Max: 238W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
package: TO-247-3
Voorraad6.912
-
1200V
3.3µA @ 1200V
35A
-
2000pF @ 19.5V (VGS)
70 mOhm
238W
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3