Pagina 55 - Infineon Technologies Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Infineon Technologies Producten - Transistors - FET's, MOSFET's - Single

Archief 8.381
Pagina  55/300
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPD80P03P4L07ATMA2
Infineon Technologies

MOSFET P-CH 30V 80A TO252-31

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad67.995
MOSFET (Metal Oxide)
30 V
80A (Tc)
-
2V @ 130µA
80 nC @ 10 V
5700 pF @ 25 V
+5V, -16V
-
88W (Tc)
6.8mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
IAUS300N04S4N007ATMA1
Infineon Technologies

MOSFET_(20V 40V) PG-HSOG-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing
package: -
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MOSFET (Metal Oxide)
40 V
300A (Tc)
10V
4V @ 275µA
342 nC @ 10 V
27356 pF @ 25 V
±20V
-
375W (Tc)
0.74mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing
IPS050N03LG
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2.2V @ 250µA
31 nC @ 10 V
3200 pF @ 15 V
±20V
-
68W (Tc)
5mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP60R520CP
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
package: -
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MOSFET (Metal Oxide)
600 V
6.8A (Tc)
10V
3.5V @ 250µA
31 nC @ 10 V
630 pF @ 100 V
±20V
-
66W (Tc)
520mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPAN60R360P7SXKSA1
Infineon Technologies

MOSFET N-CH 650V 9A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 22W (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
package: -
Voorraad1.470
MOSFET (Metal Oxide)
650 V
9A (Tc)
10V
4V @ 140µA
13 nC @ 10 V
555 pF @ 400 V
±20V
-
22W (Tc)
360mOhm @ 2.7A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IDYH50G200C5XKSA1
Infineon Technologies

SIC DISCRETE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRLML2402TR
Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3™/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
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MOSFET (Metal Oxide)
20 V
1.2A (Ta)
-
700mV @ 250µA (Min)
3.9 nC @ 4.5 V
110 pF @ 15 V
-
-
-
250mOhm @ 930mA, 4.5V
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
BSC0402NSATMA1
Infineon Technologies

MOSFET N-CH 150V 80A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 107µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-7
  • Package / Case: 8-PowerTDFN
package: -
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MOSFET (Metal Oxide)
150 V
80A (Tc)
8V, 10V
4.6V @ 107µA
33 nC @ 10 V
2400 pF @ 75 V
±20V
-
139W (Tc)
9.3mOhm @ 40A, 10
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
IAUCN04S7N005ATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 95µA
  • Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-43
  • Package / Case: 8-PowerTDFN
package: -
Voorraad21.372
MOSFET (Metal Oxide)
40 V
175A (Tj)
7V, 10V
3V @ 95µA
127 nC @ 10 V
8320 pF @ 20 V
±20V
-
179W (Tc)
0.55mOhm @ 88A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-43
8-PowerTDFN
IRFH7004TR2PBF
Infineon Technologies

MOSFET N CH 40V 100A PQFN5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-VQFN Exposed Pad
package: -
Request a Quote
MOSFET (Metal Oxide)
40 V
100A (Tc)
-
3.9V @ 150µA
194 nC @ 10 V
6419 pF @ 25 V
-
-
-
1.4mOhm @ 100A, 10V
-
Surface Mount
8-PQFN (5x6)
8-VQFN Exposed Pad
SPD50N03S2L
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2V @ 85µA
68 nC @ 10 V
2530 pF @ 25 V
±20V
-
136W (Tc)
6.4mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB60R165CPATMA1
Infineon Technologies

MOSFET N-CH 600V 21A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad15.393
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
3.5V @ 790µA
52 nC @ 10 V
2000 pF @ 100 V
±20V
-
192W (Tc)
165mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AIMZH120R120M1TXKSA1
Infineon Technologies

SIC_DISCRETE

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
  • Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 133W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-11
  • Package / Case: TO-247-4
package: -
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SiC (Silicon Carbide Junction Transistor)
1200 V
22A (Tc)
18V, 20V
5.1V @ 2.2mA
18 nC @ 20 V
458 pF @ 800 V
+23V, -5V
-
133W (Tc)
150mOhm @ 7A, 20V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-11
TO-247-4
IPB023N04NF2SATMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 81µA
  • Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad2.283
MOSFET (Metal Oxide)
40 V
30A (Ta), 122A (Tc)
6V, 10V
3.4V @ 81µA
102 nC @ 10 V
4800 pF @ 20 V
±20V
-
3.8W (Ta), 150W (Tc)
2.35mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA65R190CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 17.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-111
  • Package / Case: TO-220-3 Full Pack
package: -
Request a Quote
MOSFET (Metal Oxide)
650 V
17.5A (Tc)
10V
4.5V @ 730µA
68 nC @ 10 V
1850 pF @ 100 V
±20V
-
34W (Tc)
190mOhm @ 7.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-111
TO-220-3 Full Pack
IPA65R190CFDXKSA2
Infineon Technologies

MOSFET N-CH 650V 17.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
package: -
Voorraad429
MOSFET (Metal Oxide)
650 V
17.5A (Tc)
10V
4.5V @ 700µA
68 nC @ 10 V
1850 pF @ 100 V
±20V
-
34W (Tc)
190mOhm @ 7.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IAUA180N08S5N026AUMA1
Infineon Technologies

MOSFET_(75V 120V( PG-HSOF-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-5-4
  • Package / Case: 5-PowerSFN
package: -
Voorraad4.710
MOSFET (Metal Oxide)
80 V
180A (Tj)
6V, 10V
3.8V @ 100µA
87 nC @ 10 V
5980 pF @ 40 V
±20V
-
179W (Tc)
2.6mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-5-4
5-PowerSFN
IPDQ65R040CFD7AXTMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
  • Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
package: -
Voorraad1.176
MOSFET (Metal Oxide)
650 V
64A (Tc)
10V
4.5V @ 1.24mA
97 nC @ 10 V
4975 pF @ 400 V
±20V
-
357W (Tc)
40mOhm @ 24.8A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
IPN95R3K7P7ATMA1
Infineon Technologies

MOSFET N-CH 950V 2A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA
package: -
Voorraad25.914
MOSFET (Metal Oxide)
950 V
2A (Tc)
10V
3.5V @ 40µA
6 nC @ 10 V
196 pF @ 400 V
±20V
-
6W (Tc)
3.7Ohm @ 800mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
AIMZH120R060M1TXKSA1
Infineon Technologies

SIC_DISCRETE

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
  • Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 197W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-11
  • Package / Case: TO-247-4
package: -
Voorraad111
SiC (Silicon Carbide Junction Transistor)
1200 V
38A (Tc)
18V, 20V
5.1V @ 4.3mA
32 nC @ 20 V
880 pF @ 800 V
+23V, -5V
-
197W (Tc)
75mOhm @ 13A, 20V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-11
TO-247-4
IAUZ30N10S5L240ATMA1
Infineon Technologies

MOSFET N-CH 100V 30A 8TSDSON-32

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 15µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-32
  • Package / Case: 8-PowerTDFN
package: -
Voorraad13.170
MOSFET (Metal Oxide)
100 V
30A (Tc)
4.5V, 10V
2.2V @ 15µA
14 nC @ 10 V
832 pF @ 50 V
±20V
-
45.5W (Tc)
24mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8-32
8-PowerTDFN
IMW120R030M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 56A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
package: -
Voorraad5.061
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
15V, 18V
5.7V @ 10mA
63 nC @ 18 V
2120 pF @ 800 V
+23V, -7V
-
227W (Tc)
40mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IRF3515STRLPBF
Infineon Technologies

MOSFET N-CH 150V 41A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Request a Quote
MOSFET (Metal Oxide)
150 V
41A (Tc)
-
4.5V @ 250µA
107 nC @ 10 V
2260 pF @ 25 V
-
-
-
45mOhm @ 25A, 10V
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFP4668PBFXKMA1
Infineon Technologies

TRENCH >=100V PG-TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
package: -
Voorraad1.188
MOSFET (Metal Oxide)
200 V
130A (Tc)
10V
5V @ 250µA
241 nC @ 10 V
10720 pF @ 50 V
±30V
-
520W
9.7mOhm @ 81A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IPB065N03LGATMA1
Infineon Technologies

MOSFET N-CH 30V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2.2V @ 250µA
23 nC @ 10 V
2400 pF @ 15 V
±20V
-
56W (Tc)
6.5mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPD90P04P405ATMA2
Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad5.253
MOSFET (Metal Oxide)
40 V
90A (Tc)
10V
4V @ 250µA
154 nC @ 10 V
10300 pF @ 25 V
±20V
-
125W (Tc)
4.7mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC050NE2LSATMA1
Infineon Technologies

MOSFET N-CH 25V 39A/58A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-5
  • Package / Case: 8-PowerTDFN
package: -
Voorraad75.060
MOSFET (Metal Oxide)
25 V
39A (Ta), 58A (Tc)
4.5V, 10V
2V @ 250µA
10.4 nC @ 10 V
760 pF @ 12 V
±20V
-
2.5W (Ta), 28W (Tc)
5mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
IPP50R190CEXKSA1
Infineon Technologies

MOSFET N-CH 500V 18.5A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 510µA
  • Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
package: -
Voorraad2.952
MOSFET (Metal Oxide)
500 V
18.5A (Tc)
13V
3.5V @ 510µA
47.2 nC @ 10 V
1137 pF @ 100 V
±20V
-
127W (Tc)
190mOhm @ 6.2A, 13V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3