Pagina 17 - Infineon Technologies Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Infineon Technologies Producten - Transistors - FET's, MOSFET's - Single

Archief 8.381
Pagina  17/300
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPA11N60C3IN
Infineon Technologies

MOSFET N-CH 650V 11A TO220-3-31

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-31
  • Package / Case: TO-220-3 Full Pack
package: -
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MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
3.9V @ 500µA
60 nC @ 10 V
1200 pF @ 25 V
±20V
-
33W (Tc)
380mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-31
TO-220-3 Full Pack
BSC0703LSATMA1
Infineon Technologies

MOSFET N-CH 60V 15A/64A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-6
  • Package / Case: 8-PowerTDFN
package: -
Voorraad5.220
MOSFET (Metal Oxide)
60 V
15A (Ta), 64A (Tc)
4.5V, 10V
2.3V @ 20µA
13 nC @ 4.5 V
1800 pF @ 30 V
±20V
-
2.5W (Ta), 46W (Tc)
6.5mOhm @ 32A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
BSO203SP
Infineon Technologies

P-CHANNEL POWER MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: -
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MOSFET (Metal Oxide)
20 V
7A (Ta)
2.5V, 4.5V
1.2V @ 50µA
39 nC @ 4.5 V
3750 pF @ 15 V
±12V
-
1.6W (Ta)
21mOhm @ 8.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PG-DSO-8
8-SOIC (0.154", 3.90mm Width)
IRF150P221AKMA1
Infineon Technologies

MOSFET N-CH 150V 186A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 264µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
package: -
Voorraad1.563
MOSFET (Metal Oxide)
150 V
186A (Tc)
10V
4.6V @ 264µA
100 nC @ 10 V
6000 pF @ 75 V
±20V
-
3.8W (Ta), 341W (Tc)
4.5mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IGT60R190D1SATMA1
Infineon Technologies

GANFET N-CH 600V 12.5A 8HSOF

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 55.5W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-3
  • Package / Case: 8-PowerSFN
package: -
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GaNFET (Gallium Nitride)
600 V
12.5A (Tc)
-
1.6V @ 960µA
-
157 pF @ 400 V
-10V
-
55.5W (Tc)
-
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-3
8-PowerSFN
IPB60R600C6ATMA1
Infineon Technologies

MOSFET N-CH 600V 7.3A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
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MOSFET (Metal Oxide)
600 V
7.3A (Tc)
10V
3.5V @ 200µA
20.5 nC @ 10 V
440 pF @ 100 V
±20V
-
63W (Tc)
600mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB60R099P7ATMA1
Infineon Technologies

MOSFET N-CH 600V 31A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 530µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 117W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
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MOSFET (Metal Oxide)
600 V
31A (Tc)
10V
4V @ 530µA
45 nC @ 10 V
1952 pF @ 400 V
±20V
-
117W (Tc)
99mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AIMZH120R010M1TXKSA1
Infineon Technologies

SIC_DISCRETE

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
  • Vgs(th) (Max) @ Id: 5.1V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 750W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-11
  • Package / Case: TO-247-4
package: -
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SiC (Silicon Carbide Junction Transistor)
1200 V
202A (Tc)
18V, 20V
5.1V @ 30mA
178 nC @ 20 V
5703 pF @ 800 V
+23V, -5V
-
750W (Tc)
11.3mOhm @ 93A, 20V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-11
TO-247-4
IPB60R125C6ATMA1
Infineon Technologies

MOSFET N-CH 600V 30A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 219W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad7.065
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
3.5V @ 960µA
96 nC @ 10 V
2127 pF @ 100 V
±20V
-
219W (Tc)
125mOhm @ 14.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA60R280C6XKSA1
Infineon Technologies

MOSFET N-CH 600V 13.8A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
package: -
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MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
3.5V @ 430µA
43 nC @ 10 V
950 pF @ 100 V
±20V
-
32W (Tc)
280mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IAUTN12S5N018TATMA1
Infineon Technologies

MOSFET_(120V 300V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-16-2
  • Package / Case: 16-PowerSOP Module
package: -
Voorraad4.827
MOSFET (Metal Oxide)
120 V
-
-
-
-
-
-
-
-
-
-55°C ~ 175°C
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
BSS126IXTSA1
Infineon Technologies

MOSFET N-CH 600V 21MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3-5
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Voorraad13.032
MOSFET (Metal Oxide)
600 V
21mA (Ta)
-
1.6V @ 8µA
1.4 nC @ 5 V
21 pF @ 25 V
±20V
Depletion Mode
500mW (Ta)
500Ohm @ 16mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3-5
TO-236-3, SC-59, SOT-23-3
IAUCN04S7L019ATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-33
  • Package / Case: 8-PowerTDFN
package: -
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MOSFET (Metal Oxide)
40 V
-
10V
-
40 nC @ 10 V
-
-
-
-
-
-55°C ~ 175°C
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
IRFH8318TR2PBF
Infineon Technologies

MOSFET N-CH 30V 21A 5X6 PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.35V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerTDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
27A (Ta), 120A (Tc)
-
2.35V @ 50µA
41 nC @ 10 V
3180 pF @ 10 V
-
-
-
3.1mOhm @ 20A, 10V
-
Surface Mount
PQFN (5x6)
8-PowerTDFN
ISP20EP10LMXTSA1
Infineon Technologies

SMALL SIGNAL MOSFETS PG-SOT223-4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 78µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
package: -
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MOSFET (Metal Oxide)
100 V
650mA (Ta), 990mA (Tc)
4.5V, 10V
2V @ 78µA
3.5 nC @ 10 V
170 pF @ 50 V
±20V
-
1.8W (Ta), 4.2W (Tc)
2Ohm @ 600mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
IQE046N08LM5ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 47µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSON-8-5
  • Package / Case: 8-PowerTDFN
package: -
Voorraad12.555
MOSFET (Metal Oxide)
80 V
15.6A (Ta), 99A (Tc)
4.5V, 10V
2.3V @ 47µA
38 nC @ 10 V
3250 pF @ 40 V
±20V
-
2.5W (Ta), 100W (Tc)
4.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-5
8-PowerTDFN
IPN70R1K2P7SATMA1
Infineon Technologies

MOSFET N-CH 700V 4.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 6.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA
package: -
Voorraad2.433
MOSFET (Metal Oxide)
700 V
4.5A (Tc)
10V
3.5V @ 40µA
4.8 nC @ 10 V
174 pF @ 400 V
±16V
-
6.3W (Tc)
1.2Ohm @ 900mA, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
IMBG120R090M1HXTMA1
Infineon Technologies

SICFET N-CH 1.2KV 26A TO263

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V
  • Vgs (Max): +18V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
package: -
Voorraad4.968
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
-
5.7V @ 3.7mA
23 nC @ 18 V
763 pF @ 800 V
+18V, -15V
-
136W (Tc)
125mOhm @ 8.5A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPA70R750P7SXKSA1
Infineon Technologies

MOSFET N-CH 700V 6.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
  • Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 21.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
package: -
Voorraad228
MOSFET (Metal Oxide)
700 V
6.5A (Tc)
10V
3.5V @ 70µA
8.3 nC @ 400 V
306 pF @ 400 V
±16V
-
21.2W (Tc)
750mOhm @ 1.4A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IPB020N04NGATMA1
Infineon Technologies

MOSFET N-CH 40V 140A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 95µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
package: -
Voorraad10.344
MOSFET (Metal Oxide)
40 V
140A (Tc)
10V
4V @ 95µA
120 nC @ 10 V
9700 pF @ 20 V
±20V
-
167W (Tc)
2mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
IRF8714TRPBFXTMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Voorraad11.520
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPI120N04S4-01M
Infineon Technologies

MOSFET N-CH TO262-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IMYH200R100M1HXKSA1
Infineon Technologies

SIC DISCRETE

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 2000 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +20V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 217W (Tc)
  • Rds On (Max) @ Id, Vgs: 131mOhm @ 10A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-U04
  • Package / Case: TO-247-4
package: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
2000 V
26A (Tc)
15V, 18V
5.5V @ 6mA
55 nC @ 18 V
-
+20V, -7V
-
217W (Tc)
131mOhm @ 10A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-U04
TO-247-4
IPB90R340C3ATMA2
Infineon Technologies

MOSFET N-CH 900V 15A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad5.712
MOSFET (Metal Oxide)
900 V
15A (Tc)
10V
3.5V @ 1mA
94 nC @ 10 V
2400 pF @ 100 V
±20V
-
208W (Tc)
340mOhm @ 9.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB50N10S3L16ATMA2
Infineon Technologies

MOSFET N-CH 100V 70A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
50A (Tc)
4.5V, 10V
2.4V @ 60µA
64 nC @ 10 V
4180 pF @ 25 V
±20V
-
100W (Tc)
15.7mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC110N15NS5SCATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 91µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-7
  • Package / Case: 8-PowerTDFN
package: -
Voorraad18.765
MOSFET (Metal Oxide)
150 V
76A (Tc)
8V, 10V
4.6V @ 91µA
35 nC @ 10 V
2770 pF @ 75 V
±20V
-
125W (Tc)
11mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
IPW50R250CPFKSA1
Infineon Technologies

MOSFET N-CH 500V 13A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 520µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
13A (Tc)
10V
3.5V @ 520µA
36 nC @ 10 V
1420 pF @ 100 V
±20V
-
114W (Tc)
250mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
IPZA65R018CFD7XKSA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
  • Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-3
  • Package / Case: TO-247-4
package: -
Request a Quote
MOSFET (Metal Oxide)
650 V
106A (Tc)
10V
4.5V @ 2.91mA
234 nC @ 10 V
11660 pF @ 400 V
±20V
-
446W (Tc)
18mOhm @ 58.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4-3
TO-247-4