Pagina 27 - Infineon Technologies Producten - Diodes - Gelijkrichters - Single | Heisener Electronics
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Infineon Technologies Producten - Diodes - Gelijkrichters - Single

Archief 805
Pagina  27/29
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDL12G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 12A VSON-4

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 190µA @ 650V
  • Capacitance @ Vr, F: 360pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 150°C
package: 4-PowerTSFN
Voorraad3.024
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
190µA @ 650V
360pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IDL10G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 10A VSON-4

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 180µA @ 650V
  • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 150°C
package: 4-PowerTSFN
Voorraad4.496
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
180µA @ 650V
300pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IDL08G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 8A VSON-4

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 140µA @ 650V
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 150°C
package: 4-PowerTSFN
Voorraad4.976
650V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
140µA @ 650V
250pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IDL06G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 6A VSON-4

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 110µA @ 650V
  • Capacitance @ Vr, F: 190pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 150°C
package: 4-PowerTSFN
Voorraad7.568
650V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
110µA @ 650V
190pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IDL04G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 4A VSON-4

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 70µA @ 650V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 175°C
package: 4-PowerTSFN
Voorraad2.576
650V
4A (DC)
1.7V @ 4A
No Recovery Time > 500mA (Io)
0ns
70µA @ 650V
130pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
IDL02G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 2A VSON-4

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 35µA @ 650V
  • Capacitance @ Vr, F: 70pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 175°C
package: 4-PowerTSFN
Voorraad4.816
650V
2A (DC)
1.7V @ 2A
No Recovery Time > 500mA (Io)
0ns
35µA @ 650V
70pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
IDK12G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 12A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 2.1mA @ 650V
  • Capacitance @ Vr, F: 360pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad6.144
650V
12A (DC)
1.8V @ 12A
No Recovery Time > 500mA (Io)
0ns
2.1mA @ 650V
360pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK10G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 10A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.7mA @ 650V
  • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad3.312
650V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
1.7mA @ 650V
300pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK09G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 9A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 9A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.6mA @ 650V
  • Capacitance @ Vr, F: 270pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad2.656
650V
9A (DC)
1.8V @ 9A
No Recovery Time > 500mA (Io)
0ns
1.6mA @ 650V
270pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK08G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 8A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.4mA @ 650V
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad5.296
650V
8A (DC)
1.8V @ 8A
No Recovery Time > 500mA (Io)
0ns
1.4mA @ 650V
250pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK06G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 6A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.1mA @ 650V
  • Capacitance @ Vr, F: 190pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad3.552
650V
6A (DC)
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
1.1mA @ 650V
190pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK05G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 5A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 830µA @ 650V
  • Capacitance @ Vr, F: 160pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad4.736
650V
5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
830µA @ 650V
160pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK04G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 4A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 670µA @ 650V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad5.168
650V
4A (DC)
1.8V @ 4A
No Recovery Time > 500mA (Io)
0ns
670µA @ 650V
130pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK03G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 3A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 500µA @ 650V
  • Capacitance @ Vr, F: 100pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-262
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-262
Voorraad4.272
650V
3A (DC)
1.8V @ 3A
No Recovery Time > 500mA (Io)
0ns
500µA @ 650V
100pF @ 1V, 1MHz
Surface Mount
TO-262
PG-TO263-2
-55°C ~ 175°C
IDK02G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 2A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 330µA @ 650V
  • Capacitance @ Vr, F: 70pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad2.160
650V
2A (DC)
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
330µA @ 650V
70pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDH12G65C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 650V 12A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 190µA @ 650V
  • Capacitance @ Vr, F: 360pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-220-2
Voorraad5.936
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
190µA @ 650V
360pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH02G65C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 650V 2A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 35µA @ 650V
  • Capacitance @ Vr, F: 70pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-220-2
Voorraad6.032
650V
2A (DC)
1.7V @ 2A
No Recovery Time > 500mA (Io)
0ns
35µA @ 650V
70pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
62-0254PBF
Infineon Technologies

DIODE SHOCTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad7.040
-
-
-
-
-
-
-
-
-
-
-
62-0253PBF
Infineon Technologies

DIODE SHOCTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad4.080
-
-
-
-
-
-
-
-
-
-
-
62-0245PBF
Infineon Technologies

DIODE SHOCTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad3.744
-
-
-
-
-
-
-
-
-
-
-
62-0239PBF
Infineon Technologies

DIODE SHOCTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad6.864
-
-
-
-
-
-
-
-
-
-
-
62-0216PBF
Infineon Technologies

DIODE SHOCTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad3.040
-
-
-
-
-
-
-
-
-
-
-
62-0209PBF
Infineon Technologies

DIODE SHOCTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad3.216
-
-
-
-
-
-
-
-
-
-
-
BAS21E6359HTMA1
Infineon Technologies

DIODE GP 200V 250MA SOT23-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
  • Operating Temperature - Junction: 150°C (Max)
package: TO-236-3, SC-59, SOT-23-3
Voorraad5.632
200V
250mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
BAS16E6393HTSA1
Infineon Technologies

DIODE GP 80V 250MA SOT23-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
  • Operating Temperature - Junction: 150°C (Max)
package: TO-236-3, SC-59, SOT-23-3
Voorraad3.312
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
IDD04S60CBUMA1
Infineon Technologies

DIODE SCHOTTKY 600V 5.6A TO252-3

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad3.296
600V
5.6A
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
130pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
BAS7002WH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 70V 70MA SCD80-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
  • Operating Temperature - Junction: -55°C ~ 125°C
package: SC-80
Voorraad5.520
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
-55°C ~ 125°C
BAS1602WH6327XTSA1
Infineon Technologies

DIODE GEN PURP 80V 200MA SCD80-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
  • Operating Temperature - Junction: 150°C (Max)
package: SC-80
Voorraad3.344
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
150°C (Max)