Pagina 50 - Fairchild/ON Semiconductor Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Fairchild/ON Semiconductor Producten - Transistors - FET's, MOSFET's - Single

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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot FDG311N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 1.9A SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 1.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad741.648
MOSFET (Metal Oxide)
20V
1.9A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4.5nC @ 4.5V
270pF @ 10V
±8V
-
750mW (Ta)
115 mOhm @ 1.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
hot FCH104N60F
Fairchild/ON Semiconductor

MOSFET N-CH 600V 37A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad106.548
MOSFET (Metal Oxide)
600V
37A (Tc)
10V
5V @ 250µA
139nC @ 10V
5950pF @ 100V
±20V
-
357W (Tc)
104 mOhm @ 18.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot FDA20N50F
Fairchild/ON Semiconductor

MOSFET N-CH 500V 22A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 388W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
package: TO-3P-3, SC-65-3
Voorraad111.252
MOSFET (Metal Oxide)
500V
22A (Tc)
10V
5V @ 250µA
65nC @ 10V
3390pF @ 25V
±30V
-
388W (Tc)
260 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot FDP075N15A_F102
Fairchild/ON Semiconductor

MOSFET N-CH 150V 130A TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad19.128
MOSFET (Metal Oxide)
150V
130A (Tc)
10V
4V @ 250µA
100nC @ 10V
7350pF @ 75V
±20V
-
333W (Tc)
7.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQA36P15
Fairchild/ON Semiconductor

MOSFET P-CH 150V 36A TO-3P

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 294W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
package: TO-3P-3, SC-65-3
Voorraad107.064
MOSFET (Metal Oxide)
150V
36A (Tc)
10V
4V @ 250µA
105nC @ 10V
3320pF @ 25V
±30V
-
294W (Tc)
90 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot FDP085N10A_F102
Fairchild/ON Semiconductor

MOSFET N-CH 100V 96A TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2695pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 96A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad6.400
MOSFET (Metal Oxide)
100V
96A (Tc)
10V
4V @ 250µA
40nC @ 10V
2695pF @ 50V
±20V
-
188W (Tc)
8.5 mOhm @ 96A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP50N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad16.104
MOSFET (Metal Oxide)
60V
50A (Tc)
10V
4V @ 250µA
41nC @ 10V
1540pF @ 25V
±25V
-
120W (Tc)
22 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDMS7650DC
Fairchild/ON Semiconductor

MOSFET N-CH 30V 47A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14765pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.99 mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad6.320
MOSFET (Metal Oxide)
30V
47A (Ta), 100A (Tc)
4.5V, 10V
2.7V @ 250µA
206nC @ 10V
14765pF @ 15V
±20V
-
3.3W (Ta), 125W (Tc)
0.99 mOhm @ 36A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
FDMS86202
Fairchild/ON Semiconductor

MOSFET N-CH 120V 8MLP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 60V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad6.688
MOSFET (Metal Oxide)
120V
13.5A (Ta)
6V, 10V
4V @ 250µA
64nC @ 10V
4250pF @ 60V
±20V
-
2.7W (Ta), 156W (Tc)
7.2 mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot FDP6030BL
Fairchild/ON Semiconductor

MOSFET N-CH 30V 40A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad6.576
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
3V @ 250µA
17nC @ 5V
1160pF @ 15V
±20V
-
60W (Tc)
18 mOhm @ 20A, 10V
-65°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot RFP12N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 12A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 12A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad569.280
MOSFET (Metal Oxide)
100V
12A (Tc)
5V
2V @ 250µA
-
900pF @ 25V
±10V
-
60W (Tc)
200 mOhm @ 12A, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FDMS8670S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 20A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad1.209.348
MOSFET (Metal Oxide)
30V
20A (Ta), 42A (Tc)
4.5V, 10V
3V @ 1mA
73nC @ 10V
4000pF @ 15V
±20V
-
2.5W (Ta), 78W (Tc)
3.5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot FDD6635
Fairchild/ON Semiconductor

MOSFET N-CH 35V 15A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad16.872
MOSFET (Metal Oxide)
35V
15A (Ta), 59A (Tc)
4.5V, 10V
3V @ 250µA
36nC @ 10V
1400pF @ 20V
±20V
-
3.8W (Ta), 55W (Tc)
10 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQD2N80TM
Fairchild/ON Semiconductor

MOSFET N-CH 800V 1.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 Ohm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad41.136
MOSFET (Metal Oxide)
800V
1.8A (Tc)
10V
5V @ 250µA
15nC @ 10V
550pF @ 25V
±30V
-
2.5W (Ta), 50W (Tc)
6.3 Ohm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDN8601
Fairchild/ON Semiconductor

MOSFET N-CH 100V 2.7A 3SSOT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 109 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad750.192
MOSFET (Metal Oxide)
100V
2.7A (Ta)
6V, 10V
4V @ 250µA
5nC @ 10V
210pF @ 50V
±20V
-
1.5W (Ta)
109 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT-3
TO-236-3, SC-59, SOT-23-3
hot FDC2612
Fairchild/ON Semiconductor

MOSFET N-CH 200V 1.1A SSOT-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 234pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 725 mOhm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad398.508
MOSFET (Metal Oxide)
200V
1.1A (Ta)
10V
4.5V @ 250µA
11nC @ 10V
234pF @ 100V
±20V
-
1.6W (Ta)
725 mOhm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6
SOT-23-6 Thin, TSOT-23-6
FDMA86265P
Fairchild/ON Semiconductor

MOSFET P-CH 150V 1A 6-MLP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 75V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MicroFET (2x2)
  • Package / Case: 6-WDFN Exposed Pad
package: 6-WDFN Exposed Pad
Voorraad3.296
MOSFET (Metal Oxide)
150V
1A (Ta)
6V, 10V
4V @ 250µA
4nC @ 10V
210pF @ 75V
±25V
-
2.4W (Ta)
1.2 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-MicroFET (2x2)
6-WDFN Exposed Pad
hot FDS9435A
Fairchild/ON Semiconductor

MOSFET P-CH 30V 5.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad1.995.012
MOSFET (Metal Oxide)
30V
5.3A (Ta)
4.5V, 10V
3V @ 250µA
14nC @ 10V
528pF @ 15V
±25V
-
2.5W (Ta)
50 mOhm @ 5.3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FCP20N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad6.560
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5V @ 250µA
98nC @ 10V
3080pF @ 25V
±30V
-
208W (Tc)
190 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDH055N15A
Fairchild/ON Semiconductor

MOSFET N-CH 150V TO-247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9445pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 429W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 120A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad134.328
MOSFET (Metal Oxide)
150V
158A (Tc)
10V
4V @ 250µA
92nC @ 10V
9445pF @ 75V
±20V
-
429W (Tc)
5.9 mOhm @ 120A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
hot FDH3632
Fairchild/ON Semiconductor

MOSFET N-CH 100V 80A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad121.224
MOSFET (Metal Oxide)
100V
12A (Ta), 80A (Tc)
6V, 10V
4V @ 250µA
110nC @ 10V
6000pF @ 25V
±20V
-
310W (Tc)
9 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
hot FDMC8010
Fairchild/ON Semiconductor

MOSFET N-CH 30V 8-PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power33
  • Package / Case: 8-PowerWDFN
package: 8-PowerWDFN
Voorraad4.592
MOSFET (Metal Oxide)
30V
30A (Ta), 75A (Tc)
4.5V, 10V
2.5V @ 1mA
94nC @ 10V
5860pF @ 15V
±20V
-
2.4W (Ta), 54W (Tc)
1.3 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power33
8-PowerWDFN
FDMS86263P
Fairchild/ON Semiconductor

MOSFET P-CH 150V 22A POWER 56

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3905pF @ 75V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad6.608
MOSFET (Metal Oxide)
150V
4.4A (Ta), 22A (Tc)
6V, 10V
4V @ 250µA
63nC @ 10V
3905pF @ 75V
±25V
-
2.5W (Ta), 104W (Tc)
53 mOhm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot NDB6020P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 24A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 12A, 4.5V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad298.908
MOSFET (Metal Oxide)
20V
24A (Tc)
4.5V
1V @ 250µA
35nC @ 5V
1590pF @ 10V
±8V
-
60W (Tc)
50 mOhm @ 12A, 4.5V
-65°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMC86160
Fairchild/ON Semiconductor

MOSFET N CH 100V 9A POWER33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power33
  • Package / Case: 8-PowerWDFN
package: 8-PowerWDFN
Voorraad5.264
MOSFET (Metal Oxide)
100V
9A (Ta), 43A (Tc)
6V, 10V
4V @ 250µA
22nC @ 10V
1290pF @ 50V
±20V
-
2.3W (Ta), 54W (Tc)
14 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power33
8-PowerWDFN
hot FDMC8010ET30
Fairchild/ON Semiconductor

MOSFET N-CH 30V 30A 8-PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power33
  • Package / Case: 8-PowerWDFN
package: 8-PowerWDFN
Voorraad4.816
MOSFET (Metal Oxide)
30V
30A (Ta), 174A (Tc)
4.5V, 10V
2.5V @ 1mA
94nC @ 10V
5860pF @ 15V
±20V
-
2.8W (Ta), 65W (Tc)
1.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
Power33
8-PowerWDFN
hot NDT454P
Fairchild/ON Semiconductor

MOSFET P-CH 30V 5.9A SOT-223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.9A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
package: TO-261-4, TO-261AA
Voorraad30.120
MOSFET (Metal Oxide)
30V
5.9A (Ta)
4.5V, 10V
2.7V @ 250µA
40nC @ 10V
950pF @ 15V
±20V
-
3W (Ta)
50 mOhm @ 5.9A, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
hot FDMS86520L
Fairchild/ON Semiconductor

MOSFET N CH 60V 13.5A 8PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4615pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6), Power56
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad28.920
MOSFET (Metal Oxide)
60V
13.5A (Ta), 22A (Tc)
4.5V, 10V
3V @ 250µA
63nC @ 10V
4615pF @ 30V
±20V
-
2.5W (Ta), 69W (Tc)
8.2 mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN