Diodes Incorporated Producten

FN1940016

Diodes Incorporated

OSCILLATOR XO 19.44MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 19.44MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

package: 4-SMD, No Lead

ZVN1409ASTOB

Diodes Incorporated

MOSFET N-CH 90V 0.01A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 90V
• Current - Continuous Drain (Id) @ 25°C: 10mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 6.5pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 250 Ohm @ 5mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

package: E-Line-3

ZVN0124ZSTOA

Diodes Incorporated

MOSFET N-CH 240V 0.16A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 16 Ohm @ 250mA, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

package: E-Line-3

ZTX757STOB

Diodes Incorporated

TRANS PNP 300V 0.5A E-LINE

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 30MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

package: E-Line-3, Formed Leads

2DB1424R-13

Diodes Incorporated

TRANS PNP 20V 3A SOT89-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
• Power - Max: 1W
• Frequency - Transition: 220MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

package: TO-243AA

DZT658-13

Diodes Incorporated

TRANS NPN 400V 0.5A SOT-223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 400V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 10V
• Power - Max: 1W
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

package: TO-261-4, TO-261AA

2DA1774R-7-F

Diodes Incorporated

TRANS PNP 50V 0.15A SOT523

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 140MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

package: SOT-523

ZTX851

Diodes Incorporated

TRANS NPN 60V 5A E-LINE

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 5A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
• Power - Max: 1.2W
• Frequency - Transition: 130MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3
• Supplier Device Package: E-Line (TO-92 compatible)

package: E-Line-3

DDZX20C-7

Diodes Incorporated

DIODE ZENER 20V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±3%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 28 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 15V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

DDZ22BSF-7

Diodes Incorporated

DIODE ZENER 21.18V 500MW SOD323F

• Voltage - Zener (Nom) (Vz): 21.18V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 70nA @ 19.6V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

package: SC-90, SOD-323F

UG1005-T

Diodes Incorporated

DIODE GEN PURP 600V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

package: DO-204AL, DO-41, Axial

MB156W

Diodes Incorporated

RECTIFIER BRIDGE 600V 15A MB-W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, MB-W
• Supplier Device Package: MB-W

package: 4-Square, MB-W

PT8A95A12DQE

Diodes Incorporated

HEATER CONTROLLER QSOP-24

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

AP22814AM8-13

Diodes Incorporated

LOAD SWITCH MSOP-8

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

AP2553FDC-7R

Diodes Incorporated

USB POWER SWITCH U-DFN2020-6

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

74AUP1G34FX4-7

Diodes Incorporated

IC GATE BUFFER SGL DFN1409-6

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: X2-DFN1409-6

package: 6-XFDFN

PI7C9X130DNDE

Diodes Incorporated

IC PCIE-PCIX BRIDGE 1PORT 256BGA

• Applications: PCI-to-PCI Bridge
• Interface: SMBus (2-Wire/I2C)
• Voltage - Supply: 1.8V, 3.3V
• Package / Case: 256-BGA
• Supplier Device Package: 256-PBGA (17x17)
• Mounting Type: Surface Mount

package: 256-BGA

PI6C557-06LEX

Diodes Incorporated

IC CLOCK GENERATOR 20-TSSOP

• PLL: No
• Main Purpose: PCI Express (PCIe)
• Input: HCSL
• Output: HCSL
• Number of Circuits: 1
• Ratio - Input:Output: 2:4
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 200MHz
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

package: 20-TSSOP (0.173", 4.40mm Width)

AH182-PG-A

Diodes Incorporated

MAGNETIC SWITCH UNIPOLAR 3SIP

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 6mT Trip, 1mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.5 V ~ 5.5 V
• Current - Supply (Max): 10µA
• Current - Output (Max): 10mA
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 3-SIP, Formed Leads
• Supplier Device Package: 3-SIP

package: 3-SIP, Formed Leads

PI3PCIE3413AZHEX

Diodes Incorporated

IC MUX/DEMUX PCIE 42VQFN

• Applications: PCI Express®
• Multiplexer/Demultiplexer Circuit: 3:1
• Switch Circuit: -
• Number of Channels: 1
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): 3 V ~ 3.6 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 6.8GHz
• Features: Bi-Directional
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 42-VFQFN Exposed Pad
• Supplier Device Package: 42-TQFN (9x3.5)

package: 42-VFQFN Exposed Pad

PT8A3237PEX

Diodes Incorporated

HEATER CONTROLLER DIP-8

• Applications: Heating Controller
• Current - Supply: -
• Voltage - Supply: 3.5 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

PT7M6101CHTA5E

Diodes Incorporated

IC SUPERVSOR ADJ SOT23-5

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High
• Reset Timeout: 60 µs Typical
• Voltage - Threshold: Adjustable/Selectable
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

SDT10100CTFP

Diodes Incorporated

DIODE ARR SCHOT 100V 5A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

package: -

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SDM4A40EP3-7B

Diodes Incorporated

DIODE SCHOTT 40V 4A X3-TSN1608-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 610 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 40 V
• Capacitance @ Vr, F: 88pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: X3-TSN1608-2
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

DMN33D8LTQ-7

Diodes Incorporated

MOSFET N-CH 30V 115MA SOT523

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 5 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 240mW (Ta)
• Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 4V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-523
• Package / Case: SOT-523

package: -

ZXTP2027FQTA

Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT23 T&R

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 4 A
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 240mV @ 200mA, 4A
• Current - Collector Cutoff (Max): 20nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 1 W
• Frequency - Transition: 165MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: -

HBS410-13

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE HBS T&R

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: HBS

package: -

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LBS10-13

Diodes Incorporated

BRIDGE RECT 1P 1KV 1A DFN5564-4

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 1 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: T-DFN5564-4

package: -

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