Diodes Incorporated Producten

FD1000015

Diodes Incorporated

OSCILLATOR XO 10.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 10MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

package: 4-SMD, No Lead

DMN6040SSDQ-13

Diodes Incorporated

MOSFET N-CH 60V 5.0A SO-8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
• Power - Max: 1.3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

ZXT13N20DE6TC

Diodes Incorporated

TRANS NPN 20V 4.5A SOT23-6

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4.5A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 230mV @ 45mA, 4.5A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 96MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-23-6

package: SOT-23-6

MMBZ5240B-7

Diodes Incorporated

DIODE ZENER 10V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 17 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

1N4933L-T

Diodes Incorporated

DIODE GEN PURP 50V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

package: DO-204AL, DO-41, Axial

SBR20150CT

Diodes Incorporated

DIODE ARRAY SBR 150V 10A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 150V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

package: TO-220-3

BAV70T-7

Diodes Incorporated

DIODE ARRAY GP 85V 75MA SOT523

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 85V
• Current - Average Rectified (Io) (per Diode): 75mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 2µA @ 75V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

package: SOT-523

AZ39151D5-ADJTRE1

Diodes Incorporated

IC REG LIN POS ADJ 1.5A TO252-5

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 13.5V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 12.8V
• Voltage Dropout (Max): 0.7V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA ~ 34mA
• PSRR: 65dB (120Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-6, DPak (5 Leads + Tab)
• Supplier Device Package: TO-252-5

package: TO-252-6, DPak (5 Leads + Tab)

AP2121N-1.2TRE1

Diodes Incorporated

IC REG LINEAR 1.2V 200MA SOT23-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.9V @ 200mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 50µA
• PSRR: 70dB (1kHz)
• Control Features: -
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

ZR40402R25STOB

Diodes Incorporated

IC VREF SHUNT 2.5V TO92-3

• Reference Type: Shunt
• Output Type: Fixed
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Current - Output: 15mA
• Tolerance: ±2%
• Temperature Coefficient: 100ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: 45µVrms
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 60µA
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: E-Line-3
• Supplier Device Package: E-Line (TO-92 compatible)

package: E-Line-3

PT7M6127CLTA3EX

Diodes Incorporated

IC SUPERVSOR 2.7V SOT23-3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: 200 µs Maximum
• Voltage - Threshold: 2.7V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

DGD21032S8-13

Diodes Incorporated

IC GATE DVR HV 8SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 70ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

AP9211SA-AK-HAC-7

Diodes Incorporated

IC BATT PROT LI-ION U-DFN2030

• Function: Battery Protection
• Battery Chemistry: Lithium-Ion
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage
• Interface: 4-Wire Serial
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2030-6 (Type C)

package: 6-UDFN Exposed Pad

PI3HDX1204-BZHE

Diodes Incorporated

IC REDRIVER HDMI 42TQFN

• Applications: HDMI Redriver, Level Shifter
• Interface: -
• Voltage - Supply: 3.3V
• Package / Case: 42-WFQFN Exposed Pad
• Supplier Device Package: 42-TQFN (9x3.5)
• Mounting Type: Surface Mount

package: 42-WFQFN Exposed Pad

PI7C9X762BZHE

Diodes Incorporated

IC BRIDGE CTRLR I2C/SPI 32-TQFN

• Protocol: I2C
• Function: Bridge, I2C/SPI to UART
• Interface: UART
• Standards: -
• Voltage - Supply: 1.8V, 2.5V, 3.3V
• Current - Supply: -
• Operating Temperature: -
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (5x5)

package: 32-WFQFN Exposed Pad

PI7C9X760BZDEX

Diodes Incorporated

IC BRIDGE I2C/SPI TO UART 24TQFN

• Protocol: I2C
• Function: Bridge, I2C/SPI to UART
• Interface: UART
• Standards: -
• Voltage - Supply: 1.8V, 2.5V, 3.3V
• Current - Supply: 6mA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: -
• Supplier Device Package: -

package: -

PI3VDP3212ZLE

Diodes Incorporated

IC DEMULTIPLEXER 2LANE 32TQFN

• Applications: Video
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 1
• On-State Resistance (Max): 10 Ohm (Typ)
• Voltage - Supply, Single (V+): 3.3V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 4.7GHz
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN-EP (3x6)

package: 32-WFQFN Exposed Pad

P6KE56CA-B

Diodes Incorporated

TVS DIODE 47.8VWM 77VC DO15

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 47.8V
• Voltage - Breakdown (Min): 53.2V
• Voltage - Clamping (Max) @ Ipp: 77V
• Current - Peak Pulse (10/1000µs): 7.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15

package: DO-204AC, DO-15, Axial

P6KE6V8CA-T

Diodes Incorporated

TVS DIODE 5.8VWM 10.5VC DO15

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.8V
• Voltage - Breakdown (Min): 6.45V
• Voltage - Clamping (Max) @ Ipp: 10.5V
• Current - Peak Pulse (10/1000µs): 57A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15

package: DO-204AC, DO-15, Axial

SMAJ110A-13-F

Diodes Incorporated

TVS DIODE 110VWM 177VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 177V
• Current - Peak Pulse (10/1000µs): 2.3A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA

package: DO-214AC, SMA

AH376-P-B

Diodes Incorporated

IC HALL LATCH SWITCH SIP-3

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

SDT30150GCTSP

Diodes Incorporated

DIODE ARR SCHOTT 150V ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 8 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO220AB (Type WX2)

package: -

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LS4148WT

Diodes Incorporated

DIODE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75 V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 75 V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Operating Temperature - Junction: -65°C ~ 175°C

package: -

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BZT52C12-13-F-79

Diodes Incorporated

DIODE ZENER

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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PSMUX154ZMEX

Diodes Incorporated

IC SWITCH SPDT X 2 6.5OHM 10UQFN

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 2
• On-State Resistance (Max): 6.5Ohm
• Channel-to-Channel Matching (ΔRon): 100mOhm
• Voltage - Supply, Single (V+): 1.8V ~ 4.3V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 25ns, 4ns (Typ)
• -3db Bandwidth: 850MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 6pF, 1.9pF
• Current - Leakage (IS(off)) (Max): 2µA
• Crosstalk: -90dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 10-UFQFN
• Supplier Device Package: 10-UQFN (1.8x1.4)

package: -

AP7583AQ-FDZW-7

Diodes Incorporated

LDO CMOS LOWCURR W-DFN2020-6 T&R

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): 5V
• Voltage Dropout (Max): 0.7V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 6 µA
• Current - Supply (Max): -
• PSRR: 70dB (100Hz)
• Control Features: Current Limit, Enable, Power Good
• Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: W-DFN2020-6 (SWP) (Type A1)

package: -

DMN2400UFB4-7B

Diodes Incorporated

MOSFET N-CH X2-DFN1006-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 470mW (Ta)
• Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

package: -

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ADC143ZUQ-7

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 3K

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

package: -