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Vishay Siliconix |
MOSFET N-CH 40V 50MA TO-18
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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package: TO-206AA, TO-18-3 Metal Can |
Voorraad3.536 |
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Vishay Siliconix |
MOSFET P-CH 40V 60A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 93.7W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad22.644 |
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Vishay Siliconix |
MOSFET N-CH 20V 6.1A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
- Rds On (Max) @ Id, Vgs: 49 mOhm @ 4.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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package: 6-TSSOP, SC-88, SOT-363 |
Voorraad6.016 |
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Vishay Siliconix |
MOSFET P-CH 20V 12A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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package: PowerPAK? SC-70-6 |
Voorraad108.000 |
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Vishay Siliconix |
MOSFET P-CH 20V 4.5A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
- Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Dual
- Package / Case: PowerPAK? SC-70-6 Dual
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package: PowerPAK? SC-70-6 Dual |
Voorraad128.220 |
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Vishay Siliconix |
MOSFET P-CH 20V 7.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.35W (Ta)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad686.964 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad7.008 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad6.960 |
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Vishay Siliconix |
MOSFET N-CH 40V 200A PWRPAK 8X8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 20330pF @ 20V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 0.96 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 8 x 8
- Package / Case: 8-PowerTDFN
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package: 8-PowerTDFN |
Voorraad4.800 |
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Vishay Siliconix |
MOSFET N-CH 500V 19A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 184 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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package: TO-220-3 Full Pack |
Voorraad18.924 |
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Vishay Siliconix |
MOSFET P-CH 60V 2.5A SSOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
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package: TO-236-3, SC-59, SOT-23-3 |
Voorraad7.872 |
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Vishay Siliconix |
MOSFET N-CH 600V 32A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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package: TO-220-3 Full Pack |
Voorraad14.094 |
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Vishay Siliconix |
MOSFET P-CH 12V 31A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 5A, 4.5V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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package: PowerPAK? SC-70-6 |
Voorraad22.356 |
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Vishay Siliconix |
MOSFET P-CH 50V 1.1A 4-DIP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 580mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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package: 4-DIP (0.300", 7.62mm) |
Voorraad51.114 |
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Vishay Siliconix |
MOSFET P-CH 20V 10A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 850µA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 14A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad568.164 |
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Vishay Siliconix |
MOSFET ARRAY 2N-CH 60V SO8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Power - Max: 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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package: PowerPAK? SO-8 Dual |
Voorraad6.688 |
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Vishay Siliconix |
MOSFET N/P-CH 30V/8V 8SOIC
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V, 8V
- Current - Continuous Drain (Id) @ 25°C: 12A, 8A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
- Power - Max: 4.5W, 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad146.220 |
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Vishay Siliconix |
IC BUCK ADJ 40A 40MLP
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 40A
- Current - Peak Output: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 3 V ~ 16 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection: Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? MLP66-40
- Supplier Device Package: PowerPAK? MLP66-40
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package: PowerPAK? MLP66-40 |
Voorraad108.000 |
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Vishay Siliconix |
IC SWITCH LV DUAL SPST 10DFN
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 7 Ohm
- Channel-to-Channel Matching (ΔRon): 100 mOhm
- Voltage - Supply, Single (V+): 1.5 V ~ 3.6 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 69ns, 39ns
- -3db Bandwidth: -
- Charge Injection: 7pC
- Channel Capacitance (CS(off), CD(off)): 9pF
- Current - Leakage (IS(off)) (Max): 2nA
- Crosstalk: -80dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
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package: 10-VFDFN Exposed Pad |
Voorraad6.000 |
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Vishay Siliconix |
IC SWITCH DUAL SPDT 10MSOP
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 4 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 48ns, 33ns
- -3db Bandwidth: -
- Charge Injection: 79pC
- Channel Capacitance (CS(off), CD(off)): 14pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -82dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 10-MSOP
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package: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) |
Voorraad104.772 |
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Vishay Siliconix |
IC ANALOG SWITCH SPDT 16SOIC
- Switch Circuit: SPST - NO/NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 45 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 100ns
- -3db Bandwidth: -
- Charge Injection: 60pC
- Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -94.8dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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package: 16-SOIC (0.154", 3.90mm Width) |
Voorraad4.032 |
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Vishay Siliconix |
IC POWER STAGE 80A 5X6 MLP
- Output Configuration: High Side
- Applications: DC-DC Converters, Synchronous Buck Converter
- Interface: Logic, PWM
- Load Type: Inductive
- Technology: Power MOSFET
- Rds On (Typ): -
- Current - Output / Channel: 80A
- Current - Peak Output: -
- Voltage - Supply: 3.3V ~ 5V
- Voltage - Load: 19V
- Operating Temperature: -
- Features: Bootstrap Circuit, Diode Emulation
- Fault Protection: Over Current, Over Temperature, UVLO
- Mounting Type: Surface Mount
- Package / Case: 39-PowerVFQFN
- Supplier Device Package: PowerPAK® MLP39-65
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package: 39-PowerVFQFN |
Voorraad7.456 |
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Vishay Siliconix |
MOSFET P-CH 30V 1.44A SC89-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.44A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 330mW (Ta)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 1.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-6
- Package / Case: SOT-563, SOT-666
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package: - |
Voorraad17.970 |
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Vishay Siliconix |
MOSFET N-CH 600V 12A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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package: - |
Voorraad9.216 |
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Vishay Siliconix |
N-CHANNEL 60-V (D-S) MOSFET POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 31.7A (Ta), 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 2.75mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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package: - |
Voorraad23.343 |
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Vishay Siliconix |
MOSFET N-CH 1000V 3.1A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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package: - |
Voorraad4.149 |
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Vishay Siliconix |
MOSFET P-CH 60V 50A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 113W (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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package: - |
Voorraad10.101 |
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Vishay Siliconix |
IC ANALOG SWITCH 8SOIC
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: -
- Number of Circuits: -
- On-State Resistance (Max): -
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 3V ~ 16V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): -
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): -
- Current - Leakage (IS(off)) (Max): -
- Crosstalk: -
- Operating Temperature: -
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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package: - |
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