Vishay Semiconductor Diodes Division Producten

VSKT250-16

Vishay Semiconductor Diodes Division

SCR DBL HISCR 1600V 250A MAGNPAK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 250A
• Current - On State (It (RMS)) (Max): 555A
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A
• Current - Hold (Ih) (Max): 500mA
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?

package: 3-MAGN-A-PAK?

VS-VSKU91/16

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 95A ADD-A-PAK

• Structure: Common Cathode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 95A
• Current - On State (It (RMS)) (Max): 150A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A
• Current - Hold (Ih) (Max): 250mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

package: ADD-A-PAK (3 + 4)

VLZ22A-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 20.68V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 20.68V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 40µA @ 19.1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

package: SOD-80 Variant

BZW03D12-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 1.85W SOD64

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±10%
• Power - Max: 1.85W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64

package: SOD-64, Axial

GDZ16B-HG3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 16V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 12V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

package: SC-76, SOD-323

BZT52B12-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 500MW SOD-123

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: SOD-123

BZT52B2V7-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 2.7V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: SOD-123

SB560/4

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

package: DO-201AD, Axial

VS-SD600R28PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2.8KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2800V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 2800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 150°C

package: B-8

VS-T85HF60

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 85A D-55

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-55 T-Module
• Supplier Device Package: D-55
• Operating Temperature - Junction: -

package: D-55 T-Module

VS-12FLR80S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 12A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 50µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA
• Operating Temperature - Junction: -65°C ~ 150°C

package: DO-203AA, DO-4, Stud

UGB12HTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 12A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 30µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 150°C

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MPG06K-E3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A MPG06

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 600ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06
• Operating Temperature - Junction: -55°C ~ 150°C

package: MPG06, Axial

1N4003E-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

package: DO-204AL, DO-41, Axial

VS-85HFL60S02

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 85A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 266.9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

package: DO-203AB, DO-5, Stud

P600G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A P600

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600
• Operating Temperature - Junction: -50°C ~ 150°C

package: P600, Axial

SBLB1030CT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Operating Temperature - Junction: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FEP30-CP

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 150V 15A TO3P

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

package: TO-3P-3, SC-65-3

VS-63CPQ100PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 770mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 100V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

package: TO-247-3

3KBP01M-E4/45

Vishay Semiconductor Diodes Division

DIODE BRIDGE 3A 100V KBPM

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

package: 4-SIP, KBPM

GBPC3510-E4/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 35A 1000V GBPC

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

package: 4-Square, GBPC

TPSMC27HE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 21.8VWM 39.1VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 21.8V
• Voltage - Breakdown (Min): 24.3V
• Voltage - Clamping (Max) @ Ipp: 39.1V
• Current - Peak Pulse (10/1000µs): 38.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

package: DO-214AB, SMC

SMA5J24-E3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 43VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 43V
• Current - Peak Pulse (10/1000µs): 11.6A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

package: DO-214AC, SMA

1.5KE27A-E3/51

Vishay Semiconductor Diodes Division

TVS DIODE 23.1VWM 37.5VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 23.1V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.5V
• Current - Peak Pulse (10/1000µs): 40A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

package: DO-201AA, DO-27, Axial

1.5KE47AHE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 40.2VWM 64.8VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40.2V
• Voltage - Breakdown (Min): 44.7V
• Voltage - Clamping (Max) @ Ipp: 64.8V
• Current - Peak Pulse (10/1000µs): 23.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

package: DO-201AA, DO-27, Axial

SA43AHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 43VWM 69.4VC DO204AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 7.2A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

package: DO-204AC, DO-15, Axial

VESD05A5A-HSF-GS08

Vishay Semiconductor Diodes Division

TVS DIODE 5VWM 13VC LLP756L

• Type: Zener
• Unidirectional Channels: 5
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 13V
• Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
• Power - Peak Pulse: 33W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 13pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UFDFN Exposed Pad
• Supplier Device Package: LLP75-6L

package: 6-UFDFN Exposed Pad

SMBJ48CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 48VWM 77.4VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 77.4V
• Current - Peak Pulse (10/1000µs): 7.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

package: DO-214AA, SMB