Toshiba Semiconductor and Storage Producten

2SK880GRTE85LF

Toshiba Semiconductor and Storage

JFET N-CH 50V 0.1W USM

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 50V
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
• Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
• Resistance - RDS(On): -
• Power - Max: 100mW
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

package: SC-70, SOT-323

TPCL4201(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
• Power - Max: 500mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XLGA
• Supplier Device Package: 4-Chip LGA

package: 4-XLGA

SSM6P36FE,LM

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A ES6

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 330mA
• Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
• Power - Max: 150mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6 (1.6x1.6)

package: SOT-563, SOT-666

2SA1930(LBS2MATQ,M

Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 180V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

package: TO-220-3 Full Pack

1SS381,L3F

Toshiba Semiconductor and Storage

DIODE RF SWITCH 30V 100MA ESC

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
• Resistance @ If, F: 900 mOhm @ 2mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 125°C (TJ)
• Package / Case: SC-79, SOD-523
• Supplier Device Package: ESC

package: SC-79, SOD-523

TA58L12S,ASHIQ(J

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: LSTM

package: TO-220-3 Full Pack

TAR5S40UTE85LF

Toshiba Semiconductor and Storage

IC REG LINEAR 4V 200MA UFV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 15V
• Voltage - Output (Min/Fixed): 4V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.2V @ 50mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 850µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Flat Lead
• Supplier Device Package: UFV

package: 6-SMD (5 Leads), Flat Lead

TCR5AM33,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA 5DFNB

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-VDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

package: 4-VDFN Exposed Pad

TC74HC373APF

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-DIP

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 2 V ~ 6 V
• Independent Circuits: 1
• Delay Time - Propagation: 12ns
• Current - Output High, Low: 7.8mA, 7.8mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 20-DIP (0.300", 7.62mm)
• Supplier Device Package: 20-DIP

package: 20-DIP (0.300", 7.62mm)

TC7SET00F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP USV

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

package: SC-74A, SOT-753

TD62084AFG,N,EL

Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 8-CH 18-SOP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 8/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 6 V ~ 15 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 18-SOIC (0.276", 7.00mm Width)
• Supplier Device Package: 18-SOP

package: 18-SOIC (0.276", 7.00mm Width)

DF2S6.8MFS,L3M

Toshiba Semiconductor and Storage

X34PB-F FSC ESD PROTECTION DIODE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 3A
• Power - Peak Pulse: 45W
• Power Line Protection: No
• Applications: -
• Capacitance @ Frequency: 0.45pF @ 1MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: SOD-923

package: SOD-923

TLP181(GR,T)

Toshiba Semiconductor and Storage

OPTOCOUPLER TRANS SOIC

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 300% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-MFSOP, 4 Lead

package: 6-SMD (4 Leads), Gull Wing

TC78S600FTG,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC, 18V/1.0

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

TCR3UG32A,LF

Toshiba Semiconductor and Storage

X34 LDO REGULATORS VOUT: 3.2V IO

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.273V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Thermal Shutdown
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, WLCSP
• Supplier Device Package: 4-WCSP-F (0.65x0.65)

package: 4-XFBGA, WLCSP

TCR3DF125,LM(CT

Toshiba Semiconductor and Storage

300MA LDO VOUT=1.25V DROPOUT=230

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.62V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

RN4901-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: -

RN2111-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: -

TK380A65Y-S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 360µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

package: -

TB6640FTG-EL

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVER, 40V, 3A, Q

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: PWM
• Technology: DMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1A
• Voltage - Supply: 3V ~ 5.5V
• Voltage - Load: 4.5V ~ 38V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-WFQFN Exposed Pad
• Supplier Device Package: 48-WQFN (7x7)

package: -

TTA1713-GR-LF

Toshiba Semiconductor and Storage

TRANS PNP 45V 0.5A SMINI

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 1V
• Power - Max: 200 mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: -

RN2418-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: -

RN4988-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPN + PNP BRT, Q1B

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: -

SSM6J808R-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS P-CH LOGIC-LEV

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP-F
• Package / Case: 6-SMD, Flat Leads

package: -

TK090E65Z-S1X

Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 90MOHM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.27mA
• Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

package: -

RN2707-LF

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR10KOHM Q1BER47KOH

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

package: -

2SC5712-TE12L-F

Toshiba Semiconductor and Storage

TRANS NPN 50V 3A PW-MINI

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3 A
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
• Power - Max: 1 W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI

package: -

TK040Z65Z-S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 57A TO247-4L

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 2.85mA
• Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L(T)
• Package / Case: TO-247-4

package: -