Toshiba Semiconductor and Storage Producten

SSM3K309T(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.7A TSM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 4A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSM
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

TPN1110ENH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 200V 7.2A 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 39W (Tc)
• Rds On (Max) @ Id, Vgs: 114 mOhm @ 3.6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.3x3.3)
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

TK39J60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 38.8A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 270W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)
• Package / Case: TO-3P-3, SC-65-3

package: TO-3P-3, SC-65-3

TK20A60U(Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

TPH4R50ANH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 100V 60A SOP ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

TP89R103NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 15A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 7.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

2SC5201,T6MURAF(J

Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 600V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
• Power - Max: 900mW
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

package: TO-226-3, TO-92-3 Long Body

2SA1242-Y(Q)

Toshiba Semiconductor and Storage

TRANS PNP 20V 5A PW-MOLD

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 170MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

package: TO-252-3, DPak (2 Leads + Tab), SC-63

TMBT3904,LM

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 320mW
• Frequency - Transition: 300MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: TO-236-3, SC-59, SOT-23-3

1SS302A,LF

Toshiba Semiconductor and Storage

DIODE SW 80V 100MA USM SC70

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

package: SC-70, SOT-323

TC78B006FTG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PWM 16WQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (2)
• Interface: PWM
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: -
• Voltage - Supply: 3.5 V ~ 16 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-WFQFN Exposed Pad
• Supplier Device Package: 16-WQFN (3x3)

package: 16-WFQFN Exposed Pad

TB6633AFNG,C8EL

Toshiba Semiconductor and Storage

IC MOTOR CTRL DVR 3PH 24SSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (3)
• Interface: Analog
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1A
• Voltage - Supply: 5.5 V ~ 22 V
• Voltage - Load: 5.5 V ~ 22 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-LSSOP (0.220", 5.60mm Width)
• Supplier Device Package: 24-SSOP

package: 24-LSSOP (0.220", 5.60mm Width)

TC62D722CFNG

Toshiba Semiconductor and Storage

IC LED DRVR CONST CURR 24HTSSOP

• Type: Linear
• Topology: Shift Register
• Internal Switch(s): Yes
• Number of Outputs: 16
• Voltage - Supply (Min): 3V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 17V
• Current - Output / Channel: 90mA
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 24-HTSSOP

package: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad

TC7PZ05FU,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER 2CH 6SSOP

• Logic Type: Inverter
• Number of Circuits: 2
• Number of Inputs: 2
• Features: Open Drain
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: -, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: US6
• Package / Case: 6-VSSOP, SC-88, SOT-363

package: 6-VSSOP, SC-88, SOT-363

TC74VHCT245AFTEL

Toshiba Semiconductor and Storage

IC BUS TRANSCVR 8BIT 20TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

package: 20-TSSOP (0.173", 4.40mm Width)

TC74LVX125FTELM

Toshiba Semiconductor and Storage

IC BUS BUFFER QUAD N-INV 14TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

package: 14-TSSOP (0.173", 4.40mm Width)

TC74HCT7007AF-ELF

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 5.5V 14SOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 6
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 14-SOP

package: 14-SOIC (0.209", 5.30mm Width)

ULN2804APG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL 8CH 50V .5A 18DIP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 8/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: 18-DIP (0.300", 7.62mm)
• Supplier Device Package: 18-DIP

package: 18-DIP (0.300", 7.62mm)

TL1L3-LL1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 2700K 2SMD

• Color: White, Warm
• CCT (K): 2700K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 112 lm (Typ)
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.85V
• Lumens/Watt @ Current - Test: 112 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 1A
• Viewing Angle: 100°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.099" (2.52mm)

package: 1414 (3535 Metric)

TLP170G(F)

Toshiba Semiconductor and Storage

IC PHOTORELAY MOSFET 4-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 50 Ohm
• Load Current: 100mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

package: 4-SOP (0.173", 4.40mm)

TC78H653FTG,EL

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVER IC, 7V, 1-C

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

74HCT00D

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14SOIC

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 17ns @ 5.5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOIC
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

package: 14-SOIC (0.154", 3.90mm Width)

TC74VHC221AFK(EL,K

Toshiba Semiconductor and Storage

X34 MONOSTABLE MULTIVIBRATOR MUL

• Logic Type: Monostable
• Independent Circuits: 1
• Schmitt Trigger Input: Yes
• Propagation Delay: -
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TFSOP (0.118", 3.00mm Width)
• Supplier Device Package: 16-VSSOP

package: 16-TFSOP (0.118", 3.00mm Width)

RN2308-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

package: -

TK7S10N1Z-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 7A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

RN1107MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

package: -

TRS12E65F-S1Q

Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 12A TO220-2L

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 90 µA @ 650 V
• Capacitance @ Vr, F: 65pF @ 650V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2L
• Operating Temperature - Junction: 175°C (Max)

package: -

CRZ13-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 13V 700MW SFLAT

• Voltage - Zener (Nom) (Vz): 13 V
• Tolerance: ±10%
• Power - Max: 700 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 9 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)

package: -