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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 50A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad5.408 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4.5A PW-MOLD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PW-MOLD
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad3.984 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 7.2A PS-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 3.6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PS-8 (2.9x2.4)
- Package / Case: 8-SMD, Flat Lead
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package: 8-SMD, Flat Lead |
Voorraad2.608 |
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Toshiba Semiconductor and Storage |
MOSFET NCH 20V 200MA SSM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
- Operating Temperature: 150°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SSM
- Package / Case: SC-75, SOT-416
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package: SC-75, SOT-416 |
Voorraad96.816 |
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Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V SC71
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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package: SC-71 |
Voorraad6.528 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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package: TO-226-3, TO-92-3 Long Body |
Voorraad3.648 |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A USM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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package: SC-70, SOT-323 |
Voorraad75.294 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.1W ES6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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package: SOT-563, SOT-666 |
Voorraad2.112 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.1W ES6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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package: SOT-563, SOT-666 |
Voorraad27.852 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.1W ES6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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package: SOT-563, SOT-666 |
Voorraad29.592 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A SFLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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package: SOD-123F |
Voorraad6.672 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 200MA SMV
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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package: SC-74A, SOT-753 |
Voorraad5.344 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 3V 200MA ESV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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package: SOT-553 |
Voorraad6.032 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 48QFN
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 3A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 38 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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package: 48-VFQFN Exposed Pad |
Voorraad5.904 |
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Toshiba Semiconductor and Storage |
IC FLASH 8GBIT 25NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 8Gb (1G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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package: 48-TFSOP (0.724", 18.40mm Width) |
Voorraad16.956 |
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Toshiba Semiconductor and Storage |
IC BUS SWITCH SPST DUAL CST8
- Type: Bus Switch
- Circuit: 2 x 1:1
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Dual Supply
- Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-XFDFN Exposed Pad
- Supplier Device Package: CST8
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package: 8-XFDFN Exposed Pad |
Voorraad44.508 |
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Toshiba Semiconductor and Storage |
IC REGISTER SHIFT 8-BIT 16-TSSOP
- Logic Type: Shift Register
- Output Type: Tri-State
- Number of Elements: 1
- Number of Bits per Element: 8
- Function: Serial to Parallel
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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package: 16-TSSOP (0.173", 4.40mm Width) |
Voorraad6.272 |
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Toshiba Semiconductor and Storage |
IC LATCH OCTAL D 3ST 20SOIC
- Logic Type: D-Type Latch
- Circuit: 8:8
- Output Type: Tri-State
- Voltage - Supply: 2 V ~ 6 V
- Independent Circuits: 1
- Delay Time - Propagation: 30ns
- Current - Output High, Low: 7.8mA, 7.8mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SOIC
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package: 20-SOIC (0.295", 7.50mm Width) |
Voorraad19.278 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
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package: 16-SOIC (0.179", 4.55mm Width) |
Voorraad3.744 |
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Toshiba Semiconductor and Storage |
OPTOISO 2.5KV OPN COLLECTOR 8DIP
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 2500Vrms
- Common Mode Transient Immunity (Min): 1kV/µs
- Input Type: DC
- Output Type: Open Collector, Schottky Clamped
- Current - Output / Channel: 25mA
- Data Rate: 10MBd
- Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
- Rise / Fall Time (Typ): 30ns, 30ns
- Voltage - Forward (Vf) (Typ): 1.65V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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package: 8-DIP (0.300", 7.62mm) |
Voorraad4.932 |
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Toshiba Semiconductor and Storage |
L-MOS LVP SERIES GATE EXCLUSIVE-
- Logic Type: XOR (Exclusive OR)
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 0.9V ~ 3.6V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.1V ~ 0.4V
- Logic Level - High: 0.75V ~ 2.48V
- Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
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package: 5-TSSOP, SC-70-5, SOT-353 |
Voorraad25.728 |
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Toshiba Semiconductor and Storage |
150V U-MOS X-H SOP-ADVANCE(N) 9M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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package: - |
Voorraad11.265 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 100MA 5SSOP
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.6 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 80 V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: 5-SSOP
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package: - |
Voorraad7.161 |
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Toshiba Semiconductor and Storage |
LDO REG VOUT=3.0V I=200MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.28V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 2 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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package: - |
Voorraad28.500 |
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Toshiba Semiconductor and Storage |
LDO REG VOUT=0.9V I=200MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.9V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.46V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 2 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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package: - |
Voorraad30.000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 82A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta), 90W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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package: - |
Voorraad15.465 |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 4
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 6.7mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L(X)
- Package / Case: TO-247-4
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package: - |
Voorraad300 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 38A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta), 61W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
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package: - |
Voorraad8.424 |
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